FEI推出Helios G3双离子束，设定新标准

New Helios G4 Series DualBeam from FEI sets new standards

Hillsboro, Ore. — November 2, 2015 — FEI today announced the new Helios™ G4 DualBeam series, which offers the highest throughput ultra-thin TEM lamella preparation for leading-edge semiconductor manufacturing and failure analysis applications. The new DualBeam series, which includes FX and HX models, takes a significant leap forward in both technological capability and ease-of-use.

The new Phoenix focused ion beam (FIB) makes finer cuts with higher precision and simplifies the creation of ultra-thin (sub 10nm) lamella for transmission electron microscopy (TEM) imaging. The FX is a flexible system that delivers dramatically improved STEM resolution – down to sub-three Ångströms – and significantly shortens the time to data for failure analysis. Images can now be obtained within minutes of completing the lamella, rather than the hours or days required previously to finalize the images on a stand-alone S/TEM system. The HX model is geared specifically for high-throughput TEM lamella production. It features an automated QuickFlip holder that reduces sample preparation times.

“FEI is the first to market with a TEM sample preparation solution capable of making 7nm thick lamella, addressing the needs of our customers who are developing next-generation devices,” states Rob Krueger, vice president and general manager of FEI’s semiconductor business. “In addition, by offering the ability to achieve sub-three Ångström image resolution in a DualBeam, failure analysis labs can now dramatically cut ‘time to data’ without compromising image quality. And, by combining high-resolution imaging and sample preparation on one system, we have reduced the amount of valuable lab real estate required.”