共找到 491 条与 其他半导体分立器件 相关的标准,共 33 页
BS IEC 62047-48. Semiconductor devices. Micro-electromechanical devices - Part 48. Test method of determining solution concentration by optical absorption using MEMS fluidic device
IEC 62047-40:2021(E) specifies the test conditions and methods of micro-electromechanical inertial shock switch threshold. This document applies to normally open micro-electromechanical inertial shock switch.
Semiconductor devices - Micro-electromechanical devices - Part 40:Test methods of micro-electromechanical inertial shock switch threshold
IEC 62047-41:2021 specifies the terminology, essential ratings and characteristics, and measuring methods of RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) circulators and isolators.
Semiconductor devices - Micro-electromechanical devices - Part 41: RF MEMS circulators and isolators
Semiconductor devices. Measurement and evaluation methods of kinetic energy harvesting devices under practical vibration environment - Arbitrary and random mechanical vibrations
Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
BS EN IEC 62047-47. Semiconductor devices. Micro-electromechanical devices - Part 47. Silicon based MEMS fabrication technology. Measurement method of bending strength of microstructures
BS EN IEC 62047-45. Semiconductor devices. Micro-electromechanical devices - Part 45. Silicon based MEMS fabrication technology. Measurement method of impact resistance of nanostructures
BS EN IEC 62047-46. Semiconductor devices. Micro-electromechanical devices - Part 46. Silicon based MEMS fabrication technology. Measurement method of tensile strength of nanoscale membrane
Semiconductor devices - Semiconductor bio sensors. Evaluation method for light responsivity characteristics of lens-free CMOS photonic array sensor package modules by incident angle of light
Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
Semiconductor devices - Part 18-4: Semiconductor bio sensors - Evaluation method of noise characteristics of lens-free CMOS photonic array sensors
Semiconductor devices - Part 18-5: Semiconductor bio sensors - Evaluation method for light responsivity characteristics of lens-free CMOS photonic array sensor package modules by incident angle of lig
Semiconductor devices - Flexible and stretchable semiconductor devices - Part 8: Test method for stretchability, flexibility, and stability of flexible resistive memory
本文件规定了紫外发光二极管光谱辐射分布和光谱辐射照度测评的操作要求和操作步骤。 本文件适用于测评紫外线辐射峰值波长200 nm~410 nm的发光二极管。
Ultraviolet light-emitting diode evaluation method
Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
Semiconductor devices - Semiconductor devices for IoT system - Part 1: Test method of sound variation detection
Test methods of semiconductor acceleration sensors
Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators
Semiconductor devices - Part 16-8: Microwave integrated circuits - Limiters
Semiconductor devices — Flexible and stretchable semiconductor devices — Part 1: Bending test method for conductive thin films on flexible substrates
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