31.080.99 其他半导体分立器件 标准查询与下载
共找到 491 条与 其他半导体分立器件 相关的标准，共 33 页
Semiconductor devices — Semiconductor devices for energy harvesting and generation — Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
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- 31.080.99
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- 发布
- 2022-11-22
- 实施
Semiconductor devices — Semiconductor devices for energy harvesting and generation — Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
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- 31.080.99
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- 发布
- 2022-11-22
- 实施
Semiconductor devices — Flexible and stretchable semiconductor devices — Part 1: Bending test method for conductive thin films on flexible substrates
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- 31.080.99
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- 发布
- 2022-11-22
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Semiconductor devices. Micro-electromechanical devices - Measurement methods of electro-mechanical conversion characteristics of piezoelectric MEMS cantilever
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- 31.080.99
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- 发布
- 2022-10-24
- 实施
- 2022-10-24
Semiconductor devices. Standardization roadmap of fault test method for automotive vehicles
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- 31.080.99
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- 发布
- 2022-10-11
- 实施
- 2022-10-11
Semiconductor devices - Standardization roadmap of fault test method for automotive vehicles
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- 31.080.99
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- 发布
- 2022-10-11
- 实施
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Procedure for identifying and evaluating defects using a combined method of optical inspection and…
- ICS
- 31.080.99
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- 发布
- 2022-09-30
- 实施
- 2022-09-30
Semiconductor devices - Micro-electromechanical devices - Part 42: Measurement methods of electro-mechanical conversion characteristics of piezoelectric MEMS cantilever
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- 31.080.99
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- 发布
- 2022-09-16
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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a comb
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- 31.080.99
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- 发布
- 2022-07-27
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Test methods of hot-film flow sensors
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- 31.080.99
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- 发布
- 20220720
- 实施
- 20220720
In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following: a) GaN enhancement and depletion-mode discrete power devices [3]; b) GaN integrated power solutions; c) the above in wafer and package levels. The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices
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- 31.080.99
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- 发布
- 2022-06-30
- 实施
- 2022-06-30
IEC 62969-2:2018 specifies procedures and definitions for measuring the efficiency of the wireless power transmission system for the automotive vehicles sensors. This document deals with the power range below 500 mW.
Semiconductor devices - Semiconductor interface for automotive vehicles - Part 2: Efficiency evaluation methods of wireless power transmission using resonance for automotive vehicles sensors
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- 31.080.99
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- 发布
- 2022-05-12
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IEC 62969-1:2017 provides general requirements for performance evaluations and environmental conditions for the power interface of automotive vehicle sensors. For performance evaluations, various electrical performances such as voltage drop from power source to automotive sensors, AC noises and voltage level are included. For environmental conditions, various test conditions such as temperature, humidity and vibration are included. In addition, terms, definitions, symbols and configurations are covered in this part.
Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors
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- 31.080.99
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- 发布
- 2022-05-12
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BS EN 60947-10. Low-voltage switchgear and controlgear - Part 10. Semiconductor Circuit-Breakers
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- 31.080.99
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- 发布
- 2022-05-05
- 实施
- 2022-05-05
本文件规定了直拉单晶硅用超导磁体的术语和定义、产品参数、 技术要求、试验方法、检验规则、标识、包装、运输和贮存。
Superconducting magnets for Czochralski monocrystalline silicon
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- 31.080.99
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- C397
- 发布
- 2022-04-23
- 实施
- 2022-04-24
Semiconductor devices - Part 5-14: Optoelectronic devices - Light emitting diodes - Test method of the surface temperature based on the thermoreflectance method
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- 31.080.99
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- 发布
- 2022-03-04
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Load test of a bolt-clamped Langevin vibrator using wattmeter method
- ICS
- 31.080.99
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- 发布
- 2022-02-21
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BS IEC 62047-43. Semiconductor devices. Micro-electromechanical devices - Part 43. Test method of electrical characteristics after cyclic bending deformation for flexible electro-mechanical devices
- ICS
- 31.080.99
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- 发布
- 2022-02-11
- 实施
- 2022-02-11
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices
- ICS
- 31.080.99
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- 发布
- 2022-02-10
- 实施
Semiconductor devices - Part 5-15: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage based on the electroreflectance spectroscopy
- ICS
- 31.080.99
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- 发布
- 2022-01-07
- 实施
