31.080.99 其他半导体分立器件 标准查询与下载

GSO IEC 62047-19:2021 半导体器件 微机电器件 第19部分：电子罗盘

IEC 62047-19:2013 defines terms, definitions, essential ratings and characteristics, and measuring methods of electronic compasses. This standard applies to electronic compasses composed of magnetic sensors and acceleration sensors, or magnetic sensors alone. This standard applies to electronic compasses for mobile electronic equipment.

Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses

GSO IEC PAS 60747-17:2021 半导体器件 分立器件 第17部分：用于基本隔离和增强隔离的磁耦合器和电容耦合器

IEC/PAS 60747-17:2011(E) gives the terminology, essential ratings, characteristics, safety test and the measuring methods of magnetic and capacitive couplers. It specifies the principles of magnetic and capacitive coupling across an isolation barrier and the related requirements for basic isolation and reinforced insulation.

Semiconductor devices - Discrete devices - Part 17: Magnetic and capacitive coupler for basic and reinforced isolation

IEC 60747-5-6:2021 半导体设备. 第5-6部分: 光电设备. 发光二极管

This part of IEC 60747 specifies the terminology, the essential ratings and characteristics, the measuring methods and the quality evaluations of light emitting diodes (LEDs) for general industrial applications such as signals, controllers, sensors, etc. LEDs for lighting applica

Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes

GSO IEC 62047-14:2021 半导体器件 微机电器件 第14部分：金属薄膜材料的成形极限测量方法

IEC 62047-14:2012 describes definitions and procedures for measuring the forming limit of metallic film materials with a thickness range from 0,5 μm to 300 μm. The metallic film materials described herein are typically used in electric components, MEMS and micro-devices. When metallic film materials used in MEMS (see 2.1.2 of IEC 62047-1:2005) are fabricated by a forming process such as imprinting, it is necessary to predict the material failure in order to increase the reliability of the components. Through this prediction, the effectiveness of manufacturing MEMS components by a forming process can also be improved, because the period of developing a product can be reduced and manufacturing costs can thus be decreased. This standard presents one of the prediction methods for material failure in imprinting process.

Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials

GSO IEC 62830-1:2021 半导体器件 用于能量收集和生成的半导体器件 第1部分：基于振动的压电能量收集

IEC 62830-1:2017 defines terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of vibration based piezoelectric energy harvesting devices for practical use. This document is applicable to energy harvesting devices for consumer, general industries, military and aerospace applications without any limitations on device technology and size.

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 1: Vibration based piezoelectric energy harvesting

GSO IEC 62047-25:2021 半导体器件 微机电器件 第25部分：硅基MEMS制造技术 微接合区域拉压和剪切强度的测量方法

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

GSO IEC 62047-20:2021 半导体器件 微机电器件 第20部分：陀螺仪

IEC 62047-20:2014 specifies terms and definitions, ratings and characteristics, and measuring methods of gyroscopes. Gyroscopes are primarily used for consumer, general industries and aerospace applications. MEMS and semiconductor lasers are widely used for device technology of gyroscopes.

Semiconductor devices - Micro-electromechanical devices - Part 20: Gyroscopes

GSO IEC 60747-5-6:2021 半导体器件 第5-6部分：光电器件 发光二极管

IEC 60747-5-6:2016 specifies the terminology, the essential ratings and characteristics, the measuring methods and the quality evaluations of light emitting diodes (LEDs) for general industrial applications such as signals, controllers, sensors, etc. LEDs for lighting applications are out of the scope of this part of IEC 60747. The types of LED are divided into the following five classes: a) LED package; b) LED flat illuminator; c) LED numeric display and alpha-numeric display; d) LED dot-matrix display; e) I LED (infrared-emitting diode). LEDs with a heat spreader or having a terminal geometry that performs the function of a heat spreader are within the scope of this part of IEC 60747. An integration of LEDs and controlgears, integrated LED modules, semi-integrated LED modules, integrated LED lamps or semi-integrated LED lamps, are out of the scope of this part of IEC 60747. This first edition of IEC 60747-5-6, together with IEC 60747-5-4, IEC 60747-5-5 and IEC 60747-5-7, cancels and replaces IEC 60747-5-1, IEC 60747-5-2 and IEC 60747-5-3, published in 1997, and their amendments. This edition constitutes a technical revision. This edition includes significant technical changes to the clauses for light emitting diodes in IEC 60747-5-1:1997, IEC 60747-5-2:1997 and IEC 60747-5-3:1997, including their amendments.

Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes

GSO IEC 62047-17:2021 半导体器件 微机电器件 第17部分：测量薄膜机械性能的凸出试验方法

IEC 62047-17:2015 specifies the method for performing bulge tests on the free-standing film that is bulged within a window. The specimen is fabricated with micro/nano structural film materials, including metal, ceramic and polymer films, for MEMS, micromachines and others. The thickness of the film is in the range of 0,1 μ to 10 μ, and the width of the rectangular and square membrane window and the diameter of the circular membrane range from 0,5 mm to 4 mm. The tests are carried out at ambient temperature, by applying a uniformly-distributed pressure to the testing film specimen with bulging window. Elastic modulus and residual stress for the film materials can be determined with this method.

Semiconductor devices - Micro-electromechanical devices - Part 17: Bulge test method for measuring mechanical properties of thin films

GSO IEC 62830-3:2021 半导体器件 用于能量收集和发电的半导体器件 第3部分：基于振动的电磁能量收集

IEC 62830-3:2017 describes terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of vibration based electromagnetic energy harvesting devices. This part of IEC 62830 specifies the methods of tests and the characteristic parameters of the vibration based electromagnetic energy harvesting devices for evaluating their performances accurately and practical use. It is applicable to energy harvesting devices for consumer, general industries, military and aerospace applications without any limitations of device technology, shape and size.

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting

GSO IEC 62047-18:2021 半导体器件 微机电器件 第18部分：薄膜材料的弯曲测试方法

IEC 62047-18:2013 specifies the method for bend testing of thin film materials with a length and width under 1 mm and a thickness in the range between 0,1 micrometre and 10 micrometre. This International Standard specifies the bend testing and test piece shape for micro-sized smooth cantilever type test pieces, which enables a guarantee of accuracy corresponding to the special features.

Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials

GSO IEC 62047-26:2021 半导体器件 微机电器件 第26部分：微沟槽和针结构的描述和测量方法

IEC 62047-26:2016 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 µm to 100 µm; walls and trenches with respective widths of 5 µm to 150 µm; and aspect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 µm or larger, and with dimensions that fit inside a cube with sides of 100 µm. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

GSO IEC 60747-5-7:2021 半导体器件 第5-7部分：光电器件 光电二极管和光电晶体管

IEC 60747-5-7:2016 specifies the terminology, the essential ratings and characteristics as well as the measuring methods of photodiodes (hereinafter referred to as "PDs") and phototransistors (hereinafter referred to as "PTs"). This standard replaces the clauses for photodiodes and phototransistors described in IEC 60747-5-1, IEC 60747-5-2 and IEC 60747-5-3, including their amendments. IEC 60747-5-1, IEC 60747-5-2 and IEC 60747-5-3, including their amendments, are replaced by the publications of IEC 60747-5-4, IEC 60747-5-5, IEC 60747-5-6 and IEC 60747-5-7 as a result of reconstruction.

Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors

GSO IEC 62047-28:2021 半导体器件 微机电器件 第28部分：振动驱动MEMS驻极体能量收集器件性能测试方法

IEC 62047-28:2017(E) specifies terms and definitions, and a performance testing method of vibration driven MEMS electret energy harvesting devices to determine the characteristic parameters for consumer, industry or any application. This document applies to vibration driven electret energy harvesting devices whose electrodes with a gap below 1 000 μm are covered by dielectric material with trapped charges and are fabricated by MEMS processes such as etching, photolithography or deposition.

Semiconductor devices - Micro-electromechanical devices - Part 28: Performance testing method of vibration-driven MEMS electret energy harvesting devices

GSO IEC 62047-27:2021 半导体器件 微机电器件 第27部分：使用微 V 形测试 (MCT) 进行玻璃料粘合结构的粘合强度测试

IEC 62047-27:2017(E) specifies a method for assessing the bond strength of glass frit bonded structures using micro-chevron-tests (MCT). It describes suitable sample geometry and provides guidance for the design of deviating sample geometries. The micro-chevron-test is an experimental method to determine the fracture toughness KIC of brittle materials or bond interfaces using specifically designed test chips (micro-chevron-samples) under defined load conditions (crack opening mode I). Owing to its high precision and low variance, it is suitable for analysing the influence of different process parameters on bond strength as well as for quality assurance.

Semiconductor devices - Micro-electromechanical devices - Part 27: Bond strength test for glass frit bonded structures using micro-chevron-tests (MCT)

GSO IEC 62047-13:2021 半导体器件 微机电器件 第13部分：测量 MEMS 结构粘合强度的弯曲和剪切型测试方法

IEC 62047-13:2012 specifies the adhesive testing method between micro-sized elements and a substrate using the columnar shape of the specimens. This international standard can be applied to adhesive strength measurement of microstructures, prepared on a substrate, with width and thickness of 1 μm to 1 mm, respectively. This standard specifies the adhesive testing method for micro-sized-elements in order to optimally select materials and processing conditions for MEMS devices. This standard does not particularly restrict test piece material, test piece size and performance of the measuring device, since the materials and size of MEMS device components range widely and testing machine for micro-sized materials has not been generalized.

Semiconductor devices - Micro-electromechanical devices - Part 13: Bend - and shear - type test methods of measuring adhesive strength for MEMS structures

GSO IEC 62047-16:2021 半导体器件 微机电器件 第16部分：测定 MEMS 薄膜残余应力的测试方法 晶圆曲率和悬臂梁偏转方法

IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

GSO IEC 62830-2:2021 半导体器件 用于能量收集和发电的半导体器件 第2部分：基于热电的热电能量收集

IEC 62830-2:2017 describes procedures and definitions for measuring the thermo power of thin films used in micro-scale thermoelectric energy generators, micro heaters and micro coolers. This part of IEC 62830 specifies the methods of tests and the characteristic parameters of the thermoelectric properties of wire, bulk and thin films which have a thickness of less than 5 mm and energy harvesting devices that have thermoelectric thin films, in order to accurately evaluate their performance and practical uses. This part of IEC 62830 is applicable to energy harvesting devices for consumer, general industries, military and aerospace applications without any limitations of device technology and size.

Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting

GSO IEC 62047-11:2021 半导体器件 微机电器件 第11部分：微机电系统自支撑材料线性热膨胀系数的测试方法

IEC 62047-11:2013 specifies the test method to measure the linear thermal expansion coefficients (CLTE) of thin free-standing solid (metallic, ceramic, polymeric, etc.) micro-electro-mechanical system (MEMS) materials with length between 0,1 mm and 1 mm and width between 10 micrometre and 1 mm and thickness between 0,1 micrometre and 1 mm, which are main structural materials used for MEMS, micromachines and others. This test method is applicable for the CLTE measurement in the temperature range from room temperature to 30 % of a material's melting temperature.

Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems

GSO IEC 62047-22:2021 半导体器件 微机电器件 第22部分：柔性基板上导电薄膜的机电拉伸试验方法

IEC 62047-22:2014 specifies a tensile test method to measure electromechanical properties of conductive thin micro-electromechanical systems (MEMS) materials bonded on non-conductive flexible substrates. Conductive thin-film structures on flexible substrates are extensively utilized in MEMS, consumer products, and flexible electronics. The electrical behaviours of films on flexible substrates differ from those of freestanding films and substrates due to their interfacial interactions. Different combinations of flexible substrates and thin films often lead to various influences on the test results depending on the test conditions and the interfacial adhesion. The desired thickness of a thin MEMS material is 50 times thinner than that of the flexible substrate, whereas all other dimensions are similar to each other.

Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates