31.080.99 其他半导体分立器件 标准查询与下载

BS IEC 62951-6:2019 半导体器件 柔性和可拉伸半导体器件 柔性导电薄膜方块电阻的测试方法

What is BS IEC 62951 ‑ 6 - Semiconductor devices about?    BS IEC 62951-6 is the sixth part of an International Standard used for Semiconductor devices.    BS IEC 62951-6 specifies terms, as well as the test method and report of sheet resistance of the flexible conducting film under bending and folding tests. The measurement methods include the 2-point probe, 4-point probe and Montgomery method, which can be applied to in-situ and ex-situ measurement and the measurements of anisotropic sheet resistance.     Who is BS IEC 62951-6 - Semiconductor devices for?   BS IEC 62951-6 Semiconductor devices are beneficial for:   Semiconductor foundries

Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for sheet resistance of flexible conducting films

BS IEC 63068-1:2019 半导体器件 功率器件用碳化硅同质外延片缺陷无损识别标准 缺陷分类

What is BS IEC 63068-1 - Silicon carbide homoepitaxial wafer about?   BS IEC 63068-1 is the first part of an international standard used for semiconductor devices that helps in classifying the defects in silicon carbide homoepitaxial. By using BS IEC 63068-1 you can manufacture good quality semiconductor devices.    BS IEC 63068-1 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.   Who is BS IEC 63068-1 - Silicon carbide homoepitaxial wafer for?    BS IEC 63068-1 on non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer useful for:

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Classification of defects

IEC 60747-18-1:2019 半导体器件第18-1部分:半导体生物传感器无透镜CMOS光子阵列传感器校准的试验方法和数据分析

This part of IEC 60747 specifies the test methods and data analysis for the calibration of lens-free CMOS photonic array sensors. This document includes the test conditions of each process@ configuration of lens-free CMOS photonic array sensors@ statistical analysis of test data@ calibration for planarization and linearity@ and test reports.

Semiconductor devices - Part 18-1: Semiconductor bio sensors - Test method and data analysis for calibration of lens-free CMOS photonic array sensors

IEC 62951-6:2019 半导体器件.柔性和可拉伸的半导体器件.第6部分:柔性导电薄膜片电阻的试验方法

This part of IEC 62951 specifies terms@ as well as the test method and report of sheet resistance of the flexible conducting film under bending and folding tests. The measurement methods include the 2-point probe@ 4-point probe and Montgomery method@ which can be applied to in-situ and ex-situ measurement and the measurements of anisotropic sheet resistance.

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 6: Test method for sheet resistance of flexible conducting films

BS IEC 62951-2:2019 半导体器件 柔性可拉伸半导体器件 柔性器件电子迁移率、亚阈值摆幅和阈值电压的评价方法

What is BS IEC 62951-2- Flexible thin-film transistor (TFT) about?    BS IEC 62951-2 is the second part of an international standard used for semiconductor devices that specifies the test method and test procedures which helps in manufacturing good quality flexible thin-film transistor (TFT) devices.   BS IEC 62951-2 specifies terms, definitions, symbols, configurations and evaluation methods that can be used to evaluate and determine the performance characteristics of flexible thin-film transistor (TFT) devices. BS IEC 62951-2 specifies test methods and characteristic parameters for accurately evaluating the performance and reliability in practical use of flexible TFT devices under the bending status.   Who is BS IEC 62951-2- Flexible thin-film transistor (TFT) for?   BS IEC 62951 ‑ 2 Semiconductor devices are beneficial for:

Semiconductor devices. Flexible and stretchable semiconductor devices - Evaluation method for electron mobility, sub-threshold swing, and threshold voltage of flexible devices

BS IEC 62047-31:2019 半导体器件 微机电器件 层状MEMS材料界面粘附能的四点弯曲测试方法

What is BS IEC 62047 ‑ 31 - Micro-electromechanical systems (MEMS) materials about ?    BS IEC 62047 ‑ 31 is the 31st part of an international standard used for semiconductor devices that specifies the bending test method. This test method helps in measuring the interfacial adhesion energy in microelectromechanical devices.    BS IEC 62047-31 is a four-point bending test method for interfacial adhesion energy of layered MEMS materials. BS IEC 62047-31 specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics.   Who is BS IEC 62047 ‑

Semiconductor devices. Micro-electromechanical devices - Four-point bending test method for interfacial adhesion energy of layered MEMS materials

IEC 62951-2:2019 半导体器件.柔性和可伸展半导体器件.第2部分:柔性器件的电子迁移率、亚阈值摆幅和阈值电压的评估方法

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 2: Evaluation method for electron mobility, sub-threshold swing and threshold voltage of flexible devices

IEC 62047-31:2019 半导体器件微机电器件第31部分:层状MEMS材料界面结合能的四点弯曲试验方法

This part of IEC 62047 specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices@ there are many layered material interfaces@ and their adhesion energies are critical to the reliability of the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a test piece of layered MEMS device@ and the interfacial adhesion energy is measured from the critical bending moment for the steady state cracking in the weakest interface. This test method applies to MEMS devices with thin film layers deposited on semiconductor substrates. The total thickness of the thin film layers should be 100 times less than the thickness of a supporting substrate (typically a silicon wafer piece).

Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials

BS IEC 62830-4:2019 半导体器件 用于能量收集和发电的半导体器件 柔性压电能量收集器件的测试和评估方法

What is BS IEC 62830 ‑ 4 - Flexible piezoelectric energy harvesting devices about? BS IEC 62830 ‑ 4 is an international standard that discusses semiconductor devices for energy harvesting and generation. BS IEC 62830 ‑ 4 is the fourth part of the series that specifies the test and evaluation methods for flexible piezoelectric energy harvesting devices. BS IEC 62830 ‑ 4 describes terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of flexible piezoelectric energy harvesting devices for practical use. Who is BS IEC 62830 ‑ 4 - Flexible piezoelectric energy harvesting devices for? BS IEC 62830 ‑ 4 is applicable for Semiconductor foundries   Automation engineers   Mechanical engineers  

Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for flexible piezoelectric energy harvesting devices

BS IEC 62951-7:2019 半导体器件 柔性和可拉伸半导体器件 表征柔性有机半导体薄膜封装阻隔性能的测试方法

What is BS IEC 62951-7 - Thin-film encapsulation about?    BS IEC 62951-7 is the seventh part of an international standard on semiconductor devices.    BS IEC 62951-7 specifies evaluation conditions and gives a method of measurement as well as a test set-up for the measurement of barrier performance for thin-film encapsulation with ultra-low permeation rate under both flat and bending conditions.   Who is BS IEC 62951-7 - Thin-film encapsulation for?    BS IEC 62951-7 is semiconductor devices useful for: -    Semiconductor foundries    Manufacturers of automobiles  

Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for characterizing the barrier performance of thin film encapsulation for flexible organic semiconductor

BS IEC 62951-4:2019 半导体器件 柔性和可拉伸半导体器件 柔性半导体器件基材上柔性导电薄膜的疲劳评估

What is BS IEC 62951-4- Flexible conductive thin film about?    BS IEC 62951-4 is the fourth part of the semiconductor multi-series standard.    BS IEC 62951-4 specifies an evaluation method of the bending fatigue properties of   conductive thin film and flexible substrate for the application at flexible semiconductor devices.   The films include any films deposited or bonded onto a non-conductive flexible substrate such   as thin metal film, transparent conducting electrode, and thin silicon film used for flexible   semiconductor devices. The electrical and mechanical behaviours of films on the substrate   are evaluated. The fatigue test methods include dynamic bending fatigue test and static   bending fatigue tes...

Semiconductor devices. Flexible and stretchable semiconductor devices - Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices

BS IEC 63068-2:2019 半导体器件 功率器件用碳化硅同质外延片缺陷无损识别标准 光学检测缺陷测试方法

What is BS IEC 63068 ‑ 2 - Silicon carbide homoepitaxial (SiC) wafer about?    BS IEC 63068 is a series of international standards for semiconductor devices that specifies the defects in silicon carbide homoepitaxial (SiC) wafer used in semiconductor devices.    BS IEC 63068 ‑ 2 is the second part of the series of documents that provides definitions and guidance in the use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers.    BS IEC 63068

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection

IEC 62951-4:2019 半导体器件.柔性和可伸展半导体器件.第4部分:柔性半导体器件衬底上柔性导电薄膜的疲劳评价

This part of IEC 62951 specifies an evaluation method of the bending fatigue properties of conductive thin film and flexible substrate for the application at flexible semiconductor devices. The films include any films deposited or bonded onto a non-conductive flexible substrate such as thin metal film@ transparent conducting electrode@ and thin silicon film used for flexible semiconductor devices. The electrical and mechanical behaviours of films on the substrate are evaluated. The fatigue test methods include dynamic bending fatigue test and static bending fatigue test.

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 4: Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices

IEC 62951-5:2019 半导体器件.柔性和可伸展半导体器件.第5部分:柔性材料热特性的试验方法

This part of IEC 62951 specifies the test method for thermal characteristics of flexible materials. This document includes terms@ definitions@ symbols@ and test methods that can be used to evaluate and determine thermal characteristics of flexible materials for practical use. The measurement method relies on non-contact optical thermometry that is based on temperature dependent optical reflectance. This document is applicable to both substrate and thin-film flexible semiconductor materials that are subjected to bending and stretching.

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 5: Test method for thermal characteristics of flexible materials

BS IEC 62047-32:2019 半导体器件 微机电器件 MEMS谐振器非线性振动测试方法

What is BS IEC 62047 ‑ 32 - MEMS resonator testing about?    MEMS resonators are small electromechanical structures that vibrate at high frequencies. They are used for timing references, signal filtering, mass sensing, biological sensing, motion sensing, and other diverse applications.   BS IEC 62047 ‑ 32 is part of the IEC 62047 series on semiconductor devices. BS IEC 62047 ‑ 32

Semiconductor devices. Micro-electromechanical devices - Test method for the nonlinear vibration of MEMS resonators

IEC 63068-2:2019 半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第2部分:光学检验缺陷的试验方法

This part of IEC 63068 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally@ this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

IEC 63068-1:2019 半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第1部分:缺陷分类

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

IEC 62047-32:2019 半导体器件微机电器件第32部分:MEMS谐振器非线性振动的试验方法

This part of IEC 62047 specifies the test method and test condition for the nonlinear vibration of MEMS resonators. The statements made in this document apply to the development and manufacture for MEMS resonators.

Semiconductor devices - Micro-electromechanical devices - Part 32: Test method for the nonlinear vibration of MEMS resonators

IEC 60050-523:2018 国际电工词汇第523部分:微型机电设备

This part of IEC 60050 gives the general terminology used for micro-electromechanical devices including the process of production of such devices. It has the status of a horizontal standard in accordance with IEC Guide 108@ Guidelines for ensuring the coherency of IEC publications ?C Application of horizontal standards. This terminology is consistent with the terminology developed in the other specialized parts of the IEV. This horizontal standard is primarily intended for use by technical committees in the preparation of standards in accordance with the principles laid down in IEC Guide 108. One of the responsibilities of a technical committee is@ wherever applicable@ to make use of horizontal standards in the preparation of its publications.

International Electrotechnical Vocabulary (IEV) - Part 523: Micro-electromechanical devices

BS IEC 62951-3:2018 半导体器件 柔性和可拉伸的半导体器件 膨胀情况下柔性基板上薄膜晶体管特性的评估

What is BS IEC 62951 ‑ 3 ‒ Evaluation of thin-film transistor characteristics about?    BS IEC 62951 ‑ 3 is the third part of an international standard used for semiconductor devices.    BS IEC 62951 ‑ 3 specifies the method for evaluating thin film transistor characteristics on flexible substrates under bulging. The thin film transistor is fabricated on flexible substrates, including polyethylene terephthalate (PET), polyimide (PI), elastomer, and others.

Semiconductor devices. Flexible and stretchable semiconductor devices - Evaluation of thin film transistor characteristics on flexible substrates under bulging