L57 膜集成电路 标准查询与下载
共找到 19 条与 膜集成电路 相关的标准，共 2 页
Semiconductor Device Integrated Circuits Part 20: General Specifications for Film Integrated Circuits and Hybrid Film Integrated Circuits Part 1: Internal Visual Inspection Requirements
- ICS
- 31.200
- CCS
- L57
- 发布
- 2023-09-07
- 实施
- 2023-09-07
Hybrid integrated circuit direct current/direct current (DC/DC) converter
- ICS
- 31.200
- CCS
- L57
- 发布
- 2023-09-07
- 实施
- 2024-01-01
Semiconductor devices—Integrated circuits—Part 21：Sectional specification for film integrated circuits and hybrid film integrated circuits on the basis of the qualification approval procedures
- ICS
- 31.200
- CCS
- L57
- 发布
- 2018-12-28
- 实施
- 2019-07-01 00:00:00.0
Semiconductor devices—Integrated circuits—Part 21-1：Blank detail specification for film integrated circuits and hybrid film integrated circuits on the basis of the qualification approval procedures
- ICS
- 31.200
- CCS
- L57
- 发布
- 2018-12-28
- 实施
- 2019-07-01 00:00:00.0
本标准规定了薄膜集成电路用氧化铝陶瓷基片的要求、测试方法、检验规则标志、包装.运输和贮存。 本标准适用于薄膜集成电路用氧化铝陶瓷基片(以下简称“基片>的生产和采购,采用薄膜工艺的片式元件用氧化館陶瓷基片也可參照使用。
Alumina ceramic substrates for thin film integrated circuits
- ICS
- 31.030
- CCS
- L57
- 发布
- 2013-11-12
- 实施
- 2014-04-15
本标准规定了薄膜集成电路用氧化铝陶瓷基片的结构尺寸、技术要求、试验方法、检验规则、标志、包装、运输、贮存。 本标准适用于薄膜集成电路用氧化铝陶瓷基片（以下简称基片）。
Alumina ceramic substrates for thin film integratedcircuits
- ICS
- 31.200
- CCS
- L57
- 发布
- 1993-09-03
- 实施
- 1993-12-01
本标准规定了厚膜集成电路用氧化铝陶瓷基片的结构尺寸、技术要求、试验方法、检验规则、标志、包装、运输、贮存。 本标准适用于厚膜集成电路用氧化铝陶瓷基片，片状元件用氧化铝陶瓷基片亦可参照使用。（以下简称基片）。
Alumina ceramic substrates for thick film integratedcircuits
- ICS
- 31.200
- CCS
- L57
- 发布
- 1993-09-03
- 实施
- 1993-12-01
Objective: Recommendation ITU-T Z.109 defines a unified modeling language (UML) profile that maps to SDL-2010 semantics so that UML is able to be used in combination with the ITU-T Specification and Description Language. Appendix I includes an (informative) Example language specification for a concrete grammar and its mapping to the UML profile.
Specification and Description Language – Unified modeling language profile for SDL-2010 (Study Group 17)
- ICS
- CCS
- L57
- 发布
- 2013-10-01
- 实施
This part of IEC 62258 has been developed to facilitate the production, supply and use of semiconductor die products, including: • wafers; • singulated bare die; • die and wafers with attached connection structures; • minimally or partially encapsulated die and wafers. This part of IEC 62258 determines the information required to facilitate the use of thermal data and models for simulation of the thermal behaviour and verification of the correct functionality of electronic systems that include bare semiconductor die, with or without connection structures, and/or minimally packaged semiconductor die. It is intended to assist all those involved in the supply chain for die devices to comply with the requirements of IEC 62258-1 and IEC 62258-2.
Semiconductor die products - Part 6: Requirements for information concerning thermal simulation
- ICS
- 31.080.99;31.200
- CCS
- L57
- 发布
- 2006-08
- 实施
- 2006-08-29
The effects of silver migration are short circuiting or reduction in insulation resistance. It is evidenced by staining or dicoloration between the cathode and anode conductive traces. Accelerated testing may be accomplished by increasing the voltage over the specified voltages. (A typical starting point would be 5Vdc 50mA).1.1 This test method is used to determine the susceptibility of a membrane switch to the migration of the silver between circuit traces under dc voltage potential.1.2 Silver migration will occur when special conditions of moisture and electrical energy are present.
Standard Test Method for Silver Migration for Membrane Switch Circuitry
- ICS
- 77.120.99 (Other non-ferrous metals and their allo
- CCS
- L57
- 发布
- 2006
- 实施
1.1 This test method is used to determine the susceptibility of a membrane switch to the migration of the silver between circuit traces under dc voltage potential.1.2 Silver migration will occur when special conditions of moisture and electrical energy are present.
Standard Test Method for Silver Migration for Membrane Switch Circuitry
- ICS
- 77.120.99 (Other non-ferrous metals and their allo
- CCS
- L57
- 发布
- 2001
- 实施
1.1 This test method is used to determine the susceptibility of a membrane switch to the migration of the silver between circuit traces under dc voltage potential.1.2 Silver migration will occur when special conditions of moisture and electrical energy are present.
Standard Test Method for Silver Migration for Membrane Switch Circuitry
- ICS
- 77.120.99 (Other non-ferrous metals and their allo
- CCS
- L57
- 发布
- 2000
- 实施
General specification for Lx band Solid-state pulse power modules
- ICS
- 31.200
- CCS
- L57
- 发布
- 1998-03-18
- 实施
- 1998-05-01
The ad hoc team choose to use the round robin approach to quantitatively measure the . effects of each variable at several levels. The round robin was developed and executed as a joint effort to minimize disagreements and maximize accuracy. The Steam Aging Round Robin was developed and approved by June 1989 (see Appendix A).
Glass Transition Temperature of Organic Films - TMA Method
- ICS
- 31.200
- CCS
- L57
- 发布
- 1995-07-01
- 实施
IPC-TR-464 was originally published in April of 1984. This Technical Report was developed to meet the growing need for a standard method of evaluating the solderability retention capability of printed circuit parts during inventory storage. The report indicated that a 1-4 hour aging procedure was in'adequate to assure the level of acceptable solderability required by the industry. A 20-24 hour aging times was recommended. Since the initial publications of IPC-TR-464, additional research has taken place on accelerated aging; better leadltermination coatings are being used to meet aging requirements imposed by the industry. In 1986 the Accelerated Aging Task Group of the IPC was reactivated to . Evaluate the most recent research to determine if the aging period could be shorted, and still provide the appropriate information on solderability retention. This addendum to IPC-TR-464 published December 1987 represents the results of the task group study.
Glass Transition Temperature of Organic Films - DMA Method
- ICS
- 31.200
- CCS
- L57
- 发布
- 1995-07-01
- 实施
本规范规定了厚膜集成电路HM0005(HM0225)视放负载电路的鉴定和质量评定的全部内容。
Detail specification for electronic components--Case rated silicon rectifier diode for Type 2CZ57
- ICS
- 31.200
- CCS
- L57
- 发布
- 1991-04-02
- 实施
- 1991-07-01
Also covers partly-completed film integrated circuits and hybrid film integrated circuits, both active and passive, supplied to customers for subsequent processing, does not cover printed circuit boards but is applicable to above film circuits which may
Semiconductor devices - Intergrated circuits. Part 20: Generic specification for film integrated circuits and hybrid film intergrated circuits
- ICS
- 31.200
- CCS
- L57
- 发布
- 1988
- 实施
Specification for metal packages of thick-film and thin-film integrated circuits
- ICS
- 31.200
- CCS
- L57
- 发布
- 1982-12-10
- 实施
- 1983-07-01
Miorocrystal glass substrates for use in thick film integrated circuits
- ICS
- 31.200
- CCS
- L57
- 发布
- 1982-08-27
- 实施
- 1983-01-01
