L04;L40 标准查询与下载

IEC 60191-6-1:2001 半导体器件的机械标准化 第6-1部分：表面安装半导体器件封装外形图绘制的一般规则 鸥翼引出线端的设计指南

This part of IEC 60191 covers the requirements for the design rule of terminal shape plastic packages with gull-wing leads; e.g., QFP, SOP, SSOP, TSOP, etc. which are packages classified as Form E in IEC 60191-4. This publication is intended to establish common rules on terminal shapes irrespective of package types. note: 1) IEC 60191-4:199, Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages.

Mechanical standardization of semiconductor devices - Part 6-1: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for gull-wing lead terminals

IEC 60191-6-8:2001 半导体器件的机械标准化 第6-8部分：表面安装半导体器件封装外形图绘制的一般规则 玻璃密封陶瓷四面扁平封装（G-QFP）的设计指南

This part of IEC 60191 provides the common outline drawings and dimensions for all types of structures and composed materials of glass sealed ceramic quad flatpack (hereinafter called G-QFP). The object of this design guide is to standardize outlines and obtain interchangeability of G-QFP.

Mechanical standardization of semiconductor devices - Part 6-8: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for glass sealed ceramic quad flatpack (G-QFP)

IEC 60191-6-5:2001 半导体器件的机械标准化 第6-5部分：表面安装半导体器件封装外形图绘制的一般规则 小螺距球状网格阵列（FBGA）的设计指南

This part of IEC 60191 provides common outline drawings and dimensions for all types of structures and composed materials of fine-pitch ball grid array (hereinafter called FBGA), whose terminal pitch is less than, or equal to, 0,80 mm and whose package body outline is square. The demand for area array style packages exists according to the multi-functioning and high performance of electrical equipment. The object of this design guide is to standardize outlines and secure interchangeability of FBGA packages. The terminal pitch and package outlines of these fine-pitch array packages are smaller than those of BGA packages.

Mechanical standardization of semiconductor devices - Part 6-5: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for fine-pitch ball grid array (FBGA)

SJ/T 10050-1991 电子元器件详细规范.3DA1722型硅NPN高频放大管壳额定的双极型晶体管

本标准适用于3DA1722型硅NPN高频放大管壳额定的双极型晶体管，它是按照GB7576-87《高频放大管壳额定的双极型晶体管空白详细规范》制订的，符合GB 4936.1-85《半导体分立器件总规范》I类的要求。

Detail specification for electronic components.Case rated bipolar transistor for silicon NPN high-frequency amplification for type 3DA1722

SJ/T 10051-1991 电子元器件详细规范.3DA2688型硅NPN高频放大管壳额定的双极型晶体管

Detail specification for electronic components.Case rated bipolar transistor for silicon NPN high-frequency amplification for type 3DA 2688

SJ/T 10052-1991 电子元器件详细规范.3CD507型硅PNP低频放大管壳额定的双极型晶体管

本标准适用于3CD 507型硅PNP低频放大管壳额定的双极型晶体管，它是按照GB 7577《低频放大管壳额定的双极型晶体管空白详细规范》制订的。符合GB 4936.1《半导体分立器件总规范》I类的要求。

Detail specification for electronic components.Case rated bipolar transistor for silicon PNP low-frequency amplification for type 3CD 507

SJ/T 10053-1991 电子元器件详细规范.3DD 313型硅NPN低频放大管壳额定的双极型晶体管

本标准适用于3DD 313型硅NPN低频放大管壳额定的双极型晶体管，它是按照GB7577《低频放大管壳额定的双极型晶体管空白详细规范》制订的。符合GB 4936.1《半导体分立器件总规范》I类的要求。

Detail specification for electronic components.Case rated bipolar transistor for silicon NPN low-frequency amplification for type 3DD 313

SJ/T 10960-1996 电子元器件详细规范 3CG844型硅PNP环境额定高频放大晶体管

Detailed specifications for electronic components - 3CG844 silicon PNP ambient-rated transistors for high frequency amplification

SJ/T 10964-1996 电子元器件详细规范 3DD401型硅NPN管壳额定低频放大晶体管（可供认证用）

Detailed specifications for electronic components - 3DD401 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification)

SJ/T 10962-1996 电子元器件详细规范 3DA1514型硅NPN环境额定高频放大晶体管（可供认证用）

Detailed specifications for electronic components - 3DA1514 silicon NPN ambient-rated transistors for high frequency amplification (Applicable for certification)

SJ 3124-1988 电子元器件详细规范.3DD1942型硅NPN低频放大管壳额定双极型晶体管

Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD1942

SJ 3127-1988 电子元器件详细规范.3DD871型硅NPN低频放大管壳额定双极型晶体管

Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD871

SJ 3125-1988 电子元器件详细规范.3DD2027型硅NPN低频放大管壳额定双极型晶体管

Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD2027

SJ 3128-1988 电子元器件详细规范.3DD820型硅NPN低频放大管壳额定双极型晶体管

Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD820

SJ 3123-1988 电子元器件详细规范.3DG1779型高频放大型额定双极型晶体管

Detail specification for electronic components--Ambient-rated bipolar transistors for high frequency amplification,Type 3DG1779

SJ 3126-1988 电子元器件详细规范.3DD869型硅NPN低频放大管壳额定双极型晶体管

Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD869

SJ/T 10791-1996 电子元器件详细规范 3CX2014A、3CX201B、3CX201C型高低频放大环境额定的双极型晶体管（可供认证用）

Detailed specifications for electronic components - 3CX2014A, 3CX201B and 3CX201C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)

SJ/T 10790-1996 电子元器件详细规范 3CG21B、3CG21C型高低频放大环境额定的双极型晶体管（可供认证用）

Detailed specifications for electronic components - 3CG21B and 3CG21C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)

SJ 2672.5-1986 电子元器件详细规范3DA305型175MHz管壳额定的低电压双极型功率晶体管

Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors,Type 3DA305

SJ 2672.4-1986 电子元器件详细规范3DA304型175MHz管壳额定的低电压双极型功率晶体管

Detail specification for electronic components--Case-rated 175MHz low voltag bipolar power transistors,Type 3DA304