31.080.30 三极管 标准查询与下载
共找到 410 条与 三极管 相关的标准，共 28 页
Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors
- ICS
- 31.080.30
- CCS
- L40
- 发布
- 2023-09-07
- 实施
- 2024-04-01
Technical specification of power electronic devices for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC)
- ICS
- 31.080.30
- CCS
- K46
- 发布
- 2019-06-04
- 实施
- 2020-01-01 00:00:00.0
本空白详细规范是半导体器件的一系列空白详细规范之一，并应与下列国家标准一起使用。
Semiconductor devices Discrete devices Part 4-1: Microwave diodes and transistors-Microwave field effect transistors Blank detail specification
- ICS
- 31.080.30
- CCS
- L41
- 发布
- 2007-06-29
- 实施
- 2007-11-01
本空白详细规范规定了制定1GHz、5W以下的单栅杨效应晶体管详细规范的基本原则，制定该范围内的所有详细规范与本空白详细规范一致。 本空白规范是与GB/T 4589.1-1989《半导体器件 分立器件和集成电路总规范》DEC 747-10：1984）和GB/T 1260-900《半导体器件 分立器件规范》（IEC 747.11：1985）有关的一系列空白详细规范中的一个。
Semiconductor devices--Discrete devices. Part 8: Field-effect transistors. Section One--Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
- ICS
- 31.080.30
- CCS
- L42
- 发布
- 1998-11-17
- 实施
- 1999-06-01
本空白详细规范规定了制定高低频放大环境额定的双极型晶体管详细规范的基本原则，制定该范围内的所有详细规范应与本空白详细规范一致。
Semiconductor devices--Discrete devices. Part 7: Bipolar transistors. Section One--Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification
- ICS
- 31.080.30
- CCS
- L42
- 发布
- 1998-11-17
- 实施
- 1999-06-01
Measuring methods for insulated-gate bipolar transistor
- ICS
- 31.080.30
- CCS
- K46
- 发布
- 1997-10-05
- 实施
- 1998-08-01
Terminology and letter symbols for insulated-gate bipolar transistor
- ICS
- 31.080.30
- CCS
- K46
- 发布
- 1997-10-05
- 实施
- 1998-08-01 00:00:00.0
本空白详细规范规定了制定高频放大管壳额定双极型晶体管详细规范的基本原则，制定该范围内的所有详细规范应与本空白详细规范一致。 本空白详细规范是与GB/T4589.1-89《半导体器件 分立器件和集成电路总规范》和GB/T 12560-90《半导体器件 分立器件分规范》有关的一系列空白详细规范中的一个。
Blank detail specification for case-rated bipolar transistors for low-frequency amplification
- ICS
- 31.080.30
- CCS
- L42
- 发布
- 1996-07-09
- 实施
- 1997-01-01
本标准规定了静电感应晶体管的标准系列和品种，以及选择和应用导则。 本标准适用于电子设备在设计和制造时应优先选用的静电感应晶体管的标准系列和品种，同时也作为静电感应晶体管生产、研制、开发时选择系列和品种的基本依据。
Series programmes for static induction transistors
- ICS
- 31.080.30
- CCS
- L44
- 发布
- 1996-07-09
- 实施
- 1997-01-01
开关用双极型晶体管空白详细规范
Blank detail specification for bipolar transistors for switching applications
- ICS
- 31.080.30
- CCS
- L42
- 发布
- 1996-07-09
- 实施
- 1997-01-01
本标准规定了功率晶体管的直流、脉冲和安全工作区测试方法及安全工作区的确定方法。本标准是对国家标准GB4587《双极型晶体管测试方法》的补充。 本标准适用于功率晶体管安全工作区的测试。
Test methods of safe operating area for power transistors
- ICS
- 31.080.30
- CCS
- L40
- 发布
- 1990-03-15
- 实施
- 1990-08-01
本空白详细规范适用于工业加热用四极管.它与GB6255《空间电荷控制电子管总规范》一起使用。它规定了详细规范采用的格式和包括的内容.
Blank detail specification for industrial heating tetrode
- ICS
- 31.080.30
- CCS
- L36
- 发布
- 1988-06-23
- 实施
- 1989-02-01
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
- ICS
- 31.080.30
- CCS
- 发布
- 2024-01-31
- 实施
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
- ICS
- 31.080.30
- CCS
- 发布
- 2024-01-31
- 实施
1 Scope This part of IEC 62373 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). This document also defines the terms pertaining to the conventional BTI test method.
Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
- ICS
- 31.080.30
- CCS
- 发布
- 2023-03-31
- 实施
- 2023-03-31
Semiconductor devices — Discrete devices — Part 7: Bipolar transistors
- ICS
- 31.080.30
- CCS
- 发布
- 2022-12-08
- 实施
Semiconductor devices — Discrete devices — Part 7: Bipolar transistors
- ICS
- 31.080.30
- CCS
- 发布
- 2022-12-08
- 实施
1 Scope This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
- ICS
- 31.080.30
- CCS
- 发布
- 2022-10-31
- 实施
- 2022-10-31
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio
- ICS
- 31.080.30
- CCS
- 发布
- 2022-05-11
- 实施
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
- ICS
- 31.080.30
- CCS
- 发布
- 2022-04-21
- 实施
