767 nm Laser Diode钾原子D2光谱激光管
Technology
DBR Single-Frequency Laser Chip
AlGaAs QW Active Layer
Epi designed for high reliability
Features
Available in several package styles
Pulsed operation for spectral stability at short pulse lengths
High power for CW applications
High Slope Efficiency
Description
The PH767DBR Series of high-power edge-emitting lasers are based on Photodigm’s
advanced single-frequency laser technology. It provides a diffraction limited,
single lateral and longitudinal mode beam. Facets are passivated for high-power
reliability. 767 nm Laser Diodes used for K D2 line spectroscopy.
Absolute Maximum Rating
1/ Butterfly package 2/ TO8 package**Do not exceed drive current or operating power of supplied LIV
CW Characteristics at TC = 25°C unless otherwise specified
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