31.080.10 二极管 标准查询与下载
共找到 343 条与 二极管 相关的标准，共 23 页
This part of IEC 61643 is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and signalling networks. Test specifications in this standard are for single ABDs consisting of two terminals. However, multiple ABDs may be assembled within a single package defined as a diode array. Each diode within the array can be tested to this specification. This standard contains a series of test criteria for determining the electrical characteristics of the ABD. From the standard test methods described herein, the performance characteristics and ratings of the ABD can be verified or established for specific packaged designs.
Components for low-voltage surge protective devices - Part 321: Specifications for avalanche breakdown diode (ABD)
- ICS
- 31.080.10
- CCS
- 发布
- 2014-12-25
- 实施
이 표준은 저전압 전력 분배 장치, 송전 및 신호망과 연결된 서지 보호 장치의 설계와 구조에 적용되는 서지 보호 장치의 부품 중 하나(이하 SPDC라고 함.)로서, 애벌란시 다이오드에 적용한다.이 표준에 설명한 시험방법은 단자 두 개로 구성된 단일 ABD에만 적용한다. 그러나 다이오드 순서가 정해진 단일 패키지에 한하여 다양하게 ABD를 조립할 수도 있다. 이렇게 순서가 정해진 경우, 각각의 다이오드는 이 시험방법을 따른다.?
Components for low-valtage surge protective devices ? Part 321: Specification for avalanche breakdown diode(ABD)
- ICS
- 31.080.10
- CCS
- 发布
- 2014-10-06
- 实施
- 2014-10-06
Components for low-valtage surge protective devices — Part 321: Specification for avalanche breakdown diode(ABD)
- ICS
- 31.080.10
- CCS
- 发布
- 2014-10-06
- 实施
Detail Specification for 5KP Series Silicon Transient Voltage Suppressor Diodes
- ICS
- 31.080.10
- CCS
- L 41
- 发布
- 2013-12-06
- 实施
- 2014-02-01
Detail specification for 2CB003 type silicon avalanche rectifier diode
- ICS
- 31.080.10
- CCS
- L 41
- 发布
- 2013-12-06
- 实施
- 2014-02-01
This part of IEC 60747 gives the requirements for the following devices: ?C signal diodes (excluding diodes designed to operate at frequencies above several hundred MHz); ?C switching diodes (excluding high power rectifier diodes); ?C voltage-regulator diodes; ?C voltage-reference diodes; ?C current-regulator diodes.
Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 2013-07
- 实施
- 2013-07-12
本标准规定了整流二极管(以下简称整流管)的一般测试要求,电特性测量、热特性测量、额定值检验和热循环负载试验方法。本标准适用于普通整流管、快恢复整流管、机动车用整流管、高压整流堆、雪崩整流管和可控雪崩整流管,半导体整流模块和半导体整流组件也可参照使用。
Testing methods for rectifier diodes
- ICS
- 31.080.10
- CCS
- K46
- 发布
- 2013-04-25
- 实施
- 2013-09-01
JB/T 8949的本部分规定了管壳额定正向平均电流5A~500A螺栓形普通整流管(以下简称整流管)的型号和尺寸、额定值和特性、检验规则、质量评定类别、标志、包装、贮存和订货单。本部分适用于整流管。
General purpose rectifier diodes.Part 1:Stud devices
- ICS
- 31.080.10
- CCS
- K46
- 发布
- 2013-04-25
- 实施
- 2013-09-01
JB/T 8949的本部分规定了管壳额定正向平均电流200A~6000A平板形普通整流管(以下简称整流管)的型号和尺寸、额定值、特性、检验规则、质量评定类别、标志、包装、贮存和订货单。本部分适用于整流管。
General purpose rectifier diodes.Part 2:Disc devices
- ICS
- 31.080.10
- CCS
- K46
- 发布
- 2013-04-25
- 实施
- 2013-09-01
Semiconductor devices.discrete devices and integrated circuits.part 2: rectifier diodes
- ICS
- 31.080.10
- CCS
- 发布
- 2010-04-07
- 实施
Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes
- ICS
- 31.080.10
- CCS
- 发布
- 2009
- 实施
本规范规定了额定电流600A及以上快恢复二极管的要求、质量保证规定和交货准备等。 本规范适用于600A至2000A的快恢复二极管的设计、生产和验收。
Specification for fast recovery diodes, 600A and above
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 2006-12-15
- 实施
- 2007-05-01
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud
- ICS
- 31.080.10
- CCS
- 发布
- 2006-12-11
- 实施
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud
- ICS
- 31.080.10
- CCS
- 发布
- 2006-12-11
- 实施
Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
- ICS
- 31.080.10
- CCS
- 发布
- 2006-12-11
- 实施
이 규격은 반도체 소자 중 다음과 같은 정류 다이오드에 관한 표준을 제공한다.-애벌란시
Semiconductor devices－Discrete devices and integrated circuits－Part 2：Rectifier diodes
- ICS
- 31.080.10
- CCS
- K46
- 发布
- 2006-12-11
- 实施
- 2006-12-11
Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
- ICS
- 31.080.10
- CCS
- 发布
- 2006-12-11
- 实施
이 규격은 정전압 다이오드 및 전압 기준 다이오드의 개별 규격 지침에 대하여 규정한다.
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
- ICS
- 31.080.10
- CCS
- K46
- 发布
- 2006-12-11
- 实施
- 2006-12-11
Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod
- ICS
- 31.080.10
- CCS
- 发布
- 2006-12-11
- 实施
