31.080.10 二极管 标准查询与下载
共找到 343 条与 二极管 相关的标准，共 23 页
本标准给出了整流(二极)管的电、热测试的一般要求，热特性、电特性和额定值的测试方法。 本标准适用于普通整流管、快恢复整流管、机动车用整流管、高压整流堆，雪崩整流管和可控雪崩警流管等整流管类半导体分立器件。半导体整流模块和半导体整流组件的有关电、热参数测试也可参照使用。
Test method for rectifier diodes
- ICS
- 31.080.10
- CCS
- K46
- 发布
- 1994-12-09
- 实施
- 1995-06-01
Semiconductor discrete device.Detail specification for semiconductor light green emitting diodes for type GF 411 of GP and GT classes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for semiconductor yellow light emitting diodes for type GF 311 of GP and GT classes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for semiconductor red light emitting diodes for type GF 111 of GP and GT classes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for type 2CK85 silicon switching diode
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for type 2CK82 silicon switching diode
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Detail specification for type GR9414 semiconductor infrared light eitting diode
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification stripline mixer diodes for 2CV334,2CV3338
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for GaAs varactor diodes for 2EC600 series
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for type 2CW1006～2CW1015 silicon voltage-regulator diode
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for silicon tuning varactor diode for type 2CC51E
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for step recovery diodes for 2CJ4220 series
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Test Method for Measurement of Reverse Recovery Time trr for Power MOSFET Drain-Source Diodes Addendum to JEDEC JESD 24
Test Method for Measurement of Reverse Recovery Time trr for Power MOSFET Drain-Source Diodes Addendum to JEDEC JESD 24
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-08-01
- 实施
Lists the ratings, characteristics and inspection requirements which shall be included as mandatory requirements in accordance with BS QC 750100.
Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994-02-15
- 实施
- 1994-02-15
What is BS QC 750109 - Rectifier diodes are used in electronic components about? BS QC 750109 specifies the test conditions and electrical characteristics of these rectifier diodes. This helps in manufacturing good quality rectifier diodes used in electronic components. BS QC 750109 define quality assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing. Who is BS QC 750109 - Rectifier diodes are used in electronic components for?
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
- ICS
- 31.080.10
- CCS
- 发布
- 1994-02-15
- 实施
- 1994-02-15
This amendment forms a part of MIL - L -376C, dated 12 January 1983, and is approved for use by all Departments and Agencies of the Department of Defense.
LEAD DIOXIDE, TECHNICAL
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1994
- 实施
Replaces clause 2 (Terms related to ratings and characteristics) and subclause 3.4.3 (Forward recovery time), amends the table in subclause 3.3.
Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 2
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1993-11
- 实施
Semiconductor devices; discrete devices and integrated circuits; part 2: rectifier diodes; amendment 2
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 1993-10
- 实施
Defines, in compliance with the IEC Quality Assessment System for Electronic Components, information to be given for: mechanical description, short description, categories of assessed quality, limiting values, electrical characteristics, marking, orderin
Semiconductor devices; discrete devices; part 2: rectifier diodes; section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 1993-09
- 实施
本规范规定了2CK84型硅开关二极管详细要求，该种器件按GJB 33《半导体分立器件总规范》的规定，提供产品保证的三个等级(GP、GT和GCT级)。
Semiconductor discrete devices Detail specificion for silicon switching diode for type 2CK84
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1993-05-11
- 实施
- 1993-07-01
