31.080.10 二极管 标准查询与下载
共找到 343 条与 二极管 相关的标准，共 23 页
The standard gathers all information on signal (including switching) diodes, voltage-reference, voltage-regulator diodes and current-regulator diodes; i.e. terminology and letter symbols, essential ratings and characteristics, measuring methods, electrical endurance tests. It supplements basic information given in Publication 747-1: Part 1: General.
Semiconductor devices - Discrete devices and integrated circuits - Part 3: Signal (including switching) and regulator diodes
- ICS
- 31.080.10
- CCS
- 发布
- 1993-04-30
- 实施
- 1993-04-26
この規格は，電子装置に使用する検波，スイッチング，混合などに用いる小信号用半導体ダィオード(以下,ダィオードという。)の電気的測定方法について規定する。
Measuring methods for small signal diodes
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1993-02-01
- 实施
本标准规定发光二极管显示屏 ( 户外用 ) 的共同要求事项，个别规格格式等之规定。
LED Outdoor Display Panel Product Standard
- ICS
- 31.080.10
- CCS
- 发布
- 1992-12-28
- 实施
- 1992-12-28
本标准适用于供发光二极管户外显示屏使用，特别要求可靠度保证之发光二极管大型灯，规定其可靠度保证之要求事项及个别规格之样式等。
Reliability Assured Light Emitting Diode Big Lamps `6rfor Outdoor Display`6s
- ICS
- 31.080.10
- CCS
- 发布
- 1992-12-28
- 实施
- 1992-12-28
General rules of light emitting diodes for fiber optic transmission
- ICS
- 31.080.10
- CCS
- 发布
- 1992-12-17
- 实施
이 규격은 광원으로서 사용하는 광전송용 발광 다이오드(전자회로 내장형을 제회한다.)의 용어
General rules of light emitting diodes for fiber optic transmission
- ICS
- 31.080.10
- CCS
- K70
- 发布
- 1992-12-17
- 实施
- 1992-12-17
General rules of light emitting diodes for fiber optic transmission
- ICS
- 31.080.10
- CCS
- 发布
- 1992-12-17
- 实施
Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK105
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-11-19
- 实施
- 1993-05-01
Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK4148
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-11-19
- 实施
- 1993-05-01
Semiconductor discrete device.Detail specification for lower noise for silion voltage reference diode for type 2DW 14～18
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-11-19
- 实施
- 1993-05-01
Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK76
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-11-19
- 实施
- 1993-05-01
Commutating Diode Safe Operating Area Test Procedure for Measuring DV/DT During Reverse Recovery of Power Transistors Addendum to JEDEC JESD 24
Commutating Diode Safe Operating Area Test Procedure for Measuring DV/DT During Reverse Recovery of Power Transistors Addendum to JEDEC JESD 24
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-08-01
- 实施
The standard contains as a collection of several publication published earlier and a set of draft standards all informations necessary for signal diodes and regulator diodes.
Semiconductor devices; discrete devices; part 3: signal diodes and regulator diodes; identical with IEC 60747-3:1985
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-04
- 实施
Semiconductor devices; discrete devices and integrated circuits; part 2: rectifier diodes; amendment 1
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 1992-02
- 实施
This specification establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs, also known as MESFETs) designed for use in high-reliability space applications such as spacecraft communications transmitters. The specification identifies the electrical parameters, wafer acceptance tests, screening tests, qudification tests, and lot acceptance inspection tests pertinent to power GaAs FETs. For the purposes of this specification, a power GaAs FET is defined as one used as an RF amplifier which is operated in compression. The specification is intended to be applicable to packaged and chip-carrier parts; consequently portions of the specification may not be applicable to unpackaged and unmounted chips
Transistor, Gallium Arsenide Power Fet, Generic Specification
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-01-01
- 实施
This standard i s intended to cover the measurement of m s e voltage i n voltage regulator diodes in the reverse breakdown regicn. It i s intended to describe noise voltage measurement at specified conditions, but may also be used 3s a guide f o r m a k i ~ g such measurements at cther than specified conditions.
Voltage Regulator Diode Noise Voltage Measurement
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-01-01
- 实施
JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel.
Conditions for Measurement of Diode Static Parameters [Superseded: JEDEC EIA-302, JEDEC 302]
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992
- 实施
This standard provides guidance for achieving equilibrium when measuring temperature sensitive static parameters of signal diodes.
Thermal Equilibrium Conditions for Measurement of Diode Static Parameters
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992
- 实施
GENERAL RULES OF LASER DIODES USED FOR RECORDING AND PLAYBACK
- ICS
- 31.080.10
- CCS
- 发布
- 1991-12-16
- 实施
