H81 半金属 标准查询与下载

KS D 0258-2012 硅晶体完整性化学择优腐蚀检验方法

이 표준은 실리콘 웨이퍼의 결정 결함을 육가 크로뮴을 포함하지 않은 선택 에칭액에 의해 검

Test methods of crystalline defects in silicon by preferential etch techniques

YS/T 43-2011 高纯砷

本标准规定了高纯砷的分类和标记、要求、试验方法、检验规则、产品标识、包装、运输、贮存等。 本标准适用于以工业砷为原料，经升华、氯化、精馏、氢还原等加工提纯后制成的纯度不小于99.999%、99.999 9%、99.999 99%的高纯砷。产品主要用于制造砷化镓等Ⅲ-Ⅴ族化合物半导体、外延源以及半导体掺杂剂等。

High-purity arsenic

YS/T 724-2009 硅粉

本标准规定硅粉的要求、试验方法、检验规则、标志、包装、运输、贮存、订货单(合同)内容等。 本标准适用于在矿热炉内用碳质还原剂与硅石熔炼所生成的工业硅破碎分筛加工成的硅粉，主要用于生产多晶硅的原料。

Metallurgical silicon powder

KS D 2313-2009 金属硅

이 표준은 주로 비철 합금 및 철강의 제조에 사용하는 합금성분 첨가제인 금속 규소에 대하여

Silicon metal

KS D 1755-2008 金属硅的化学分析方法

이 규격은 금속 규소 중의 규소, 탄소, 인, 황, 철, 칼슘 및 알루미늄 정량 방법에 대

Methods for chemical analysis of metallic silicon

YS/T 651-2007 二氧化硒

本标准规定了二氧化硒的要求、试验方法、检验规则及标志、包装、运输和贮存。 本标准适用于采用燃烧法所生产的二氧化硒。适用于电解金属锰添加剂、精细化工合成各种硒酸盐、饲料添加剂、有机合成氧化剂、催化剂、电镀表面处理剂、化学试剂等领域用二氧化硒。

Selenium dioxide

YS/T 223-2007 硒

本标准规定了硒的要求、试验方法、检验规则及标志、包装、运输、贮存。 本标准适用于由铜、铅、锌等冶炼生产过程中综合回收的硒原料经进一步分离提纯而制得的硒。

Selenium

JIS H 0615 ERRATUM 1:2006 勘误

ERRATUM

JIS G 1322 AMD 1:2006 金属硅的化学分析方法(修改件1)

Methods for chemical analysis of metallic silicon (Amendment 1)

ASTM A922-05(2010) 硅金属标准规范

1.1 This specification covers several grades of silicon metal. 1.2 The values stated in inch-pound units are to be regarded as standard. The values given in parentheses are mathematical conversions to SI units that are provided for information only and are not considered standard. The SI equivalents of inch-pound units given may be approximate.

Standard Specification for Silicon Metal

ASTM A922-05 硅金属标准规范

1.1 This specification covers three regular grades of silicon metal designated as Grades A, B, and C. 1.2 The values stated in inch-pound units are to be regarded as the standard. The SI equivalents of inch-pound units given may be approximate.

Standard Specification for Silicon Metal

ASTM A922-05(2015) 硅金属的标准规格

1.1 This specification covers several grades of silicon metal. 1.2 The values stated in inch-pound units are to be regarded as standard. The values given in parentheses are mathematical conversions to SI units that are provided for information only and are not considered standard. The SI equivalents of inch-pound units given may be approximate.

Standard Specification for Silicon Metal

YS 68-2004 砷

本标准规定了砷的要求 ，试验方法，检验规则及标志、包装、运输，喧存、质量证明书及安全。 本标准适用于以三氧化二砷(AssO )为原料，经升华.还原，冷却而制得的砷。该产品主要用于生 产合金和半导体等行业。

Arsenic

KS D 0257-2002 光电导衰减测量法测定硅单晶体少数载流子寿命的方法

이 규격은 실리콘 단결정 중의 소수 캐리어의 벌크 재결합 수명(이하 벌크 수명 또는 tB라

Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method

KS D 0262-2002 硅切割片和研磨片的外观检验

이 규격은 실리콘 웨이퍼에서 보이는 다양한 특징과 오염 물질의 겉모양 검사 및 한쪽면으로

Visual inspection for sliced and lapped silicon wafers

ASTM F533-02 硅片的厚度及厚度变化的标准试验方法

1.1 This test method covers measurement of the thickness of silicon wafers, polished or unpolished, and estimation of the variation in thickness across the wafer. 1.2 This test method is intended primarily for use with wafers that meet the dimension and tolerance requirements of SEMI Specifications M1. However, it can be applied to circular silicon wafers, or substrates of any diameter and thickness that can be handled without breaking. 1.3 This test method is suitable for both contact and contactless gaging equipment. Precision statements have been established for each. 1.4 The values stated in inch-pound units are to be regarded as standard. The values in parentheses are for information only. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Thickness and Thickness Variation of Silicon Wafers

ASTM D6738-01 沉淀二氧化硅的标准试验方法.挥发物的含量

1.1 This test method covers a procedure to determine the volatile content of precipitated hydrated silicas. These volatiles are generally excess water adsorbed onto the surface of the silica. This test method does not determine water of hydration of the silica.1.2 The values stated in SI units are to be regarded as the standard. The values in parentheses are for information only.1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Precipitated Silica8212;Volatile Content

ASTM D6738-01(2006) 沉淀二氧化硅的标准试验方法.挥发物的含量

The volatiles content of a precipitated silica may affect the processing properties of a rubber mixture containing silica and the properties of the final product.1.1 This test method covers a procedure to determine the volatile content of precipitated hydrated silicas. These volatiles are generally excess water adsorbed onto the surface of the silica. This test method does not determine water of hydration of the silica.1.2 The values stated in SI units are to be regarded as the standard. The values in parentheses are for information only.This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Precipitated Silica-Volatile Content

ASTM F81-00 硅片径向电阻率变化测量的标准试验方法

1.1 This test method provides procedures for the determination of relative radial variation of resistivity of semiconductor wafers cut from silicon single crystals grown either by the Czochralski or floating-zone technique.1.2 This test method provides procedures for using Test Method F84 for the four-point probe measurement of radial resistivity variation.1.3 This test method yields a measure of the variation in resistivity between the center and selected outer regions of the specimen. The amount of information obtained regarding the magnitude and form of the variation in the intervening regions when using the four-point probe array depends on the sampling plan chosen (see 7.2). The interpretation of the variations measured as radial variations may be in error if azimuthal variations on the wafer or axial variations along the crystal length are not negligible.1.4 This test method can be applied to single crystals of silicon in circular wafer form, the thickness of which is less than one-half of the average probe spacing, and the diameter of which is at least 15 mm (0.6 in.). Measurements can be made on any specimen for which reliable resistivity measurements can be obtained. The resistivity measurement procedure of Test Method F84 has been tested on specimens having resistivities between 0.0008 and 2000 cm for p-type silicon and between 0.0008 and 6000 cm for n-type silicon. Geometrical correction factors required for these measurements are included for the case of standard wafer diameters, and are available in tabulated form for other cases.Note 1--In the case of wafers whose thickness is greater than the average spacing of the measurement probes, no geometrical correction factor is available except for measurement at the center of the wafer face.1.5 Several sampling plans are given which specify sets of measurement sites on the wafers being tested. The sampling plans allow differing levels of detail of resistivity variation to be obtained. One of these sampling plans shall be selected and agreed upon by the parties to the measurement. The basic resistivity measurements of Test Method F 84 are then applied at each site specified in the chosen sampling plan.1.6 Results are expressed as relative changes in resistivity between the several measurement sites. To obtain absolute values of resistivity it is necessary to measure and correct for specimen temperature (see 11.1.4).1.7 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only. 1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Measuring Radial Resistivity Variation on Silicon Wafers

ASTM F1188-00 红外线吸收法测定硅中填隙原子氧含量的标准试验方法

1.1 This test method covers the determination of the interstitial oxygen content of single crystal silicon by infrared spectroscopy. This test method requires the use of an oxygen-free reference specimen and a set of calibration standards, such as those comprising NIST SRM 2551. It permits, but does not require, the use of a computerized spectrophotometer. 1.2 The useful range of oxygen concentration measurable by this test method is from 1 X 1016 atoms/cm3 to the maximum amount of interstitial oxygen soluble in silicon. 1.3 The oxygen concentration obtained using this test method assumes a linear relationship between the interstitial oxygen concentration and the absorption coefficient of the 1107 cm-1 band associated with interstitial oxygen in silicon. 1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption