H82 元素半导体材料 标准查询与下载

ASTM F1894-98 定量分析硅化钨半导体加工膜组分和厚度的标准试验方法

1.1 This test method covers the quantitative determination of tungsten and silicon concentrations in tungsten/silicon (WSIx), semiconductor process films using Rutherford Backscattering Spectrometry (RBS). (1) This test method also covers the detection and quantification of impurities in the mass range from phosphorus A (31 atomic mass units (amu) to antimony (122 amu). 1.2 This test method can be used for tungsten silicide films prepared by any deposition or annealing processes, or both. The film must be a uniform film with an areal coverage greater than the incident ion beam (~2.5 mm). 1.3 This test method accurately measures he following film properties: silicon/tungsten ratio and variations with depth, tungsten depth profile throughout film, WSIx, film thickness, argon concentrations (if present), presence of oxide on surface of WSIx films, and transition metal impurities to detection limits of 1 x 10 14 atoms/cm2. 1.4 This test method can detect absolute differences in silicon and tungsten concentrations of +/- 3 and +/- 1 atomic percent, respectively, measured from different samples in separate analyses. relative variations in the tungsten concentration in depth can be detected to +/- 0.2 atomic percent with a depth resolution of +/- 70A. 1.5 This test method supports and assists in qualifying WSIx films by electrical resistivity techniques. 1.6 This test method can be performed for WSIx films deposited on conducting or insulating substrates. 1.7 This test method is useful for WSIx films between 20 and 400 mm with an areal coverage of greater than 1 by 1 mm. 1.8 This test method is non-destructive to the film to the extent of sputtering. 1.9 A statistical process control (SPC) of WSIx films has been monitored since 1993 with reproducibility to +/- 4%. 1.10 This test method produces accurate film thicknesses by modeling the film density of the WSIx film as WSI2 (hexagonal) plus excess elemental SI2. The measured film thickness is a lower limit to the actual film thickness with an accuracy less than 10% compared to SEM cross-section measurements (see 13.4) 1.11 This test method can be used to analyze films on whole wafers up to 300 mm without breaking the wafers. The sites that can be analyzed may be restricted to concentric rings near the wafer edges for 200-mm and 300-mm wafers, depending on system capabilities. 1.12 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness

ASTM F950-98 用角抛光和疵点侵蚀加工法测量机械加工硅片表面晶体损坏深度的试验方法

1.1 This test method describes a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer. Such damage results from mechanical surface treatments such as sawing, lapping, grinding, sandblasting, and shot peening. 1.2 The principal application of this test method is for determining the depth of damage of the non-polished back surface that has had intentionally added work damage. 1.3 The measurement is destructive since a specimen is prepared from a section of a silicon wafer. 1.4 Depth of damage can be measured in the range of 5.0 to 200 [mu]m using this method. 1.5 For referee purposes, a sampling plan shall be agreed upon between the parties to the test before the tests are started. 1.6 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.

Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching

ASTM F1894-98(2003) 定量分析硅化钨半导体加工膜组分和厚度的标准试验方法

This test method can be used to ensure absolute reproducibility of WSix film deposition systems over the course of many months. The time span of measurements is essentially the life of many process deposition systems. This test method can be used to qualify new WSix deposition systems to ensure duplicability of existing systems. This test method is essential for the coordination of global semiconductor fabrication operations using different analytical services. This test method allows samples from various deposition systems to be analyzed at different sites and times. This test method is the chosen calibration technique for a variety of analytical techniques, including, but not limited to: 5.3.1 Electron spectroscopy for chemical analysis (ESCA or XPS), 5.3.2 Auger electron spectroscopy (AES), 5.3.3 Fourier transform infrared red spectroscopy (FTIR), 5.3.4 Secondary ion mass spectrometry (SIMS), and 5.3.5 Electron dispersive spectrometry (EDS) and particle induced x-ray emission (PIXE).1.1 This test method covers the quantitative determination of tungsten and silicon concentrations in tungsten/silicon (WSIx), semiconductor process films using Rutherford Backscattering Spectrometry (RBS). (1) This test method also covers the detection and quantification of impurities in the mass range from phosphorus A (31 atomic mass units (amu) to antimony (122 amu). 1.2 This test method can be used for tungsten silicide films prepared by any deposition or annealing processes, or both. The film must be a uniform film with an areal coverage greater than the incident ion beam (~2.5 mm). 1.3 This test method accurately measures he following film properties: silicon/tungsten ratio and variations with depth, tungsten depth profile throughout film, WSIx, film thickness, argon concentrations (if present), presence of oxide on surface of WSIx films, and transition metal impurities to detection limits of 1 x 10 14 atoms/cm2. 1.4 This test method can detect absolute differences in silicon and tungsten concentrations of +/- 3 and +/- 1 atomic percent, respectively, measured from different samples in separate analyses. relative variations in the tungsten concentration in depth can be detected to +/- 0.2 atomic percent with a depth resolution of +/- 70A. 1.5 This test method supports and assists in qualifying WSIx films by electrical resistivity techniques. 1.6 This test method can be performed for WSIx films deposited on conducting or insulating substrates. 1.7 This test method is useful for WSIx films between 20 and 400 mm with an areal coverage of greater than 1 by 1 mm. 1.8 This test method is non-destructive to the film to the extent of sputtering. 1.9 A statistical process control (SPC) of WSIx films has been monitored since 1993 with reproducibility to +/- 4%. 1.10 This test method produces accurate film thicknesses by modeling the film density of the WSIx film as WSI2 (hexagonal) plus excess elemental SI2. The measured film thickness is a lower limit to the actual film thickness with an accuracy less than 10% compared to SEM cross-section measurements (see 13.4) 1.11 This test method can be used to analyze films on whole wafers up to 300 mm without breaking the wafers. The sites that can be analyzed may be restricted to concentric rings near the wafer edges for 200-mm and 300-mm wafers, depending on system capabilities. 1.12 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. The reader is referenced to Section 8 of this test method......

Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness

ASTM F1390-97 自动非接触式扫描法测量硅晶片翅曲度的试验方法

1.1 This test method covers a noncontacting, nondestructive procedure to determine the warp of clean, dry semiconductor wafers. 1.2 The test method is applicable to wafers 50 mm or larger in diameter, and 100 [mu]m (0.004 in.) approximately and larger in thickness, independent of thickness variation and surface finish, and of gravitationally-induced wafer distortion. 1.3 This test method is not intended to measure the flatness of either exposed silicon surface. Warp is a measure of the distortion of the median surface of the wafer. 1.4 This test method measures warp of a wafer corrected for all mechanical forces applied during the test. Therefore, the procedure described gives the unconstrained value of warp. This test method includes a means of canceling gravity-induced deflection which could otherwise alter the shape of the wafer. The resulting parameter is described by Warp(2) in Appendix X2 Shape Decision Tree in SEMI Specification M1. (See Annex A1.) Note 1-Test Method F657 measures median surface warp using a three-point back-surface reference plane. The back-surface reference results in thickness variation being included in the recorded warp value. The use (in this test method) of a median surface reference plane eliminates this effect. The use (in this test method) of a least-squares fit reference plane reduces the variability introduced in three-point plane calculations by choice of reference point location. The use (in this test method) of special calibration or compensating techniques minimizes the effects of gravity-induced distortion of the wafer. %1.5 The values stated in SI units are to be regarded separately as the standard. The values given in parentheses are for information only. 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Measuring Warp on Silicon Wafers by Automated Noncontact Scanning

ASTM F1726-97 硅片结晶完整性分析的标准导则

1.1 This guide covers the determination of the density of crystallographic defects in unpatterned polished and epitaxial silicon wafers. Epitaxial silicon wafers may exhibit dislocations, hillocks, shallow pits or epitaxial stacking faults, while polished wafers may exhibit several forms of crystallographic defects or surface damage. Use of this practice is based upon the application of several referenced standards in a prescribed sequence to reveal and count microscopic defects or structures. 1.2 Materials for which this practice is applicable may be defined by the limitations of the referenced documents. 1.2.1 This practice is suitable for use with epitaxial or polished wafers grown in either (111) or (100) direction and doped either p or n-type with resistivity greater than 0.0005 Omega-cm. 1.2.2 This practice is suitable for use with epitaxial wafers with layer thickness greater than 0.5 181m. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Guide for Analyis of Crystallographic Perfection of Silicon Wafers

ASTM F1727-97 抛光硅片氧化诱发缺陷检测标准实施规程

1.1 This practice covers the detection of crystalline defects in the surface region of silicon wafers. The defects are induced or enhanced by oxidation cycles encountered in normal device processing. An atmospheric pressure, oxidation cycle representative of bipolar, metal-oxide-silicon (MOS) and CMOS technologies is included. This practice is required to reveal strain fields arising from the presence of precipitates, oxidation induced stacking faults, and shallow etch pits. Slip is also revealed that arises when internal or edge stresses are applied to the wafer. 1.2 Application of this practice is limited to specimens that have been chemical or chemical/mechanical polished to remove surface damage from at lease one side of the specimen. This practice may also be applied to detection of defects in epitaxial layers. 1.3 The surface of the specimen opposite the surface to be investigated may be damaged deliberately or otherwise treated for gettering purposes or chemically etched to remove damage. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers

ASTM F1809-97 造成硅的结构性缺陷的浸蚀溶液的选择与使用标准导则

1.1 This guide covers the formulation, selection, and use of chemical solutions developed to reveal structural defects in silicon wafers. Etching solutions identify crystal defects that adversely affect the circuit performance and yield of silicon devices. Sample preparation, temperature control, etching technique, and choice of etchant are all key factors in the successful use of an etching method. This guide provides information for several etching solutions and allows the user to select according to the need. For further information see Appendix X1 and Figs. 1-32. For a test method for counting preferentially etched or decorated surface defects in silicon wafers see Test Method F 1810. 1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon

ASTM F1810-97 择优统计硅片侵蚀或表面缺陷的标准试验方法

1.1 This test method describes the technique to count the density of surface defects in silicon wafers by microscopic analysis. Note 1-Practical use of a defect counting method requires an assumption be made that defects are randomly distributed on the surface. If this assumption is not met, the accuracy and precision of this test method will be diminished. 1.2 Application of this test method is limited to specimens that have discrete, identifiable artifacts on the surface of the silicon sample. Typical samples have been preferentially etched according to Guide F 1809 or epitaxially deposited, forming defects in a silicon layer structure. 1.3 Wafer thickness and diameter for this test method is limited only by the range or microscope stage motions available. 1.4 This test method is applicable to silicon wafers with defect density between 0.01 and 10 000 defects per cm2. Note 2-The commercially significant defect density range is between 0.01 to 10 defects per cm2, but this test method extends to higher defect levels due to improved statistical sampling obtained with higher counts. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers

DIN 50441-1:1996 半导体工艺材料试验.半导体片几何尺寸测量.第1部分:厚度和厚度变化

The method covers determination of the thickness of circular or D-shaped semiconductor wafers with any surface quality by using both contactless and contacting instruments for thickness measurement.

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation

JIS H 0602:1995 用四点探针法对硅晶体和硅片电阻率的测试方法

この規格は，シリコン単結晶（以下,単結晶という。）及びシリコンウェーハ(以下，ウェーハという。)の直流4探針法による抵抗率の側定方法について規定する。測定可能な抵抗率範囲は，P形は0.001～2000 Ω·cm, N形は0.001-6000Ω·cmとする。

Testing method of resistivity for silicon crystals and silicon wafers with four-point probe

DIN 50452-1:1995 半导体工艺用材料的检验.液体中粒子分析的试验方法.第1部分:粒子的显微镜测定

This method cover the determination of the concentration of particulate matter contamination from liquids isolated on a membrane filter by microscopic counting. The scope is limited to sizing particles of 5 ?and more.

Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles

DIN 50452-3:1995 半导体工艺材料的检验.液体中颗粒分析的试验方法.第3部分:光学粒子计数器校正

The document describes methods for the determination of measuring deviations of particle sizes, particle concentrations and the resolving capacity of optical particle counters based upon measuring of the laser light-scattering.#,,#

Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters

SJ/T 10625-1995 锗单晶体中间隙氧含量的红外吸收测定方法

本标准适用于锗单晶中间隙氧含量的测定，测量范围为10ppba至间隙氧在锗单晶中的最大固溶度。

Determination method for interstitial atomic oxygen content of germanium by infrared abaorption

SJ/T 10627-1995 通过测量间隙氧含量的减少表征硅片氧沉淀特性的方法

本标准适用于室温电阻率大于0．1Ω．cm的N型或P型直拉硅晶片，其热循环可为单一温度或双温度。

Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction

DIN 50447:1995 半导体工艺材料的检验.用涡流法无接点测量半导体层的表面电阻

Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method

DIN 50456-2:1995 半导体工艺材料的试验.电子元件用模塑化合物的特性表示法.第2部分:用压力萃取法测定电离子杂质

Testing of materials for semiconductor technology - Method for the characterisation of moulding compounds for electronic components - Part 2: Determination of ionic impurities using pressure cooker test

ASTM F1239-94 通过测量晶隙氧还原表征硅片氧沉淀的标准试验方法

1.1 These test methods cover complementary procedures for testing the oxygen precipitation characteristics of silicon wafers. It is assumed that the precipitation characteristics are related to the amount of interstitial oxygen lost during specified thermal cycles. 1.2 These test methods may be used to compare qualitatively the precipitation characteristics of two or more groups of wafers. 1.3 These test methods may be applied to any - or -type, any orientation Czochralski silicon wafers whose thickness, resistivity, and surface finish are such as to permit the oxygen concentration to be determined by infrared absorption and whose oxygen concentration is such as to produce measurable oxygen loss. 1.4 These test methods are not suitable for determining the width or characteristics of a "denuded zone," a region near the surface of a wafer that is essentially free of oxide precipitates. 1.5 Because these test methods are destructive, suitable sampling techniques must be employed. 1.6 The values stated in SI units are regarded as standard. 1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.

Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction

IEEE 1160-1993 辐射探测器用高纯锗晶体试验程序

Applies to the measurement of bulk properties of high-purity germanium as they relate to the fabrication and performance of germanium detectors for gamma rays and x-rays.

Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors

ASTM F1152-93(2001) 硅片刻槽尺寸的标准测试方法

1.1 This test method covers a nondestructive procedure to determine whether or not the dimensions of fiducial notches on silicon wafers fall within specified limits. 1.2 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only. 1.3 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Dimensions of Notches on Silicon Wafers

ASTM F1152-93 硅片刻槽尺寸的标准测试方法

1.1 This test method covers a nondestructive procedure to determine whether or not the dimensions of fiducial notches on silicon wafers fall within specified limits. 1.2 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only. 1.3 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Dimensions of Notches on Silicon Wafers