L44 场效应器件 标准查询与下载

GB/T 16468-1996 静电感应晶体管系列型谱

本标准规定了静电感应晶体管的标准系列和品种，以及选择和应用导则。 本标准适用于电子设备在设计和制造时应优先选用的静电感应晶体管的标准系列和品种，同时也作为静电感应晶体管生产、研制、开发时选择系列和品种的基本依据。

Series programmes for static induction transistors

GB/T 15450-1995 硅双栅场效应晶体管 空白详细规范

本空白详细规范规定了制订硅双栅场效应晶体管详细规范的基本原则，制订该范围内的所有详细规范应与本空白详细规范一致。

Blank detail specification for silicon dual-qute field-effect transistors

GB/T 15449-1995 管壳额定开关用场效应晶体管 空白详细规范

本空白详细规范规定了制订管壳额定开头用场效应晶体详细规范的基本原则，制订该范围内的所有详细规范应与本空白详细规范一致。

Biank detail-specification for field-dffect transistors for case-rated swatching application

SJ/T 9014.8.2-2018 半导体器件 分立器件第8-2部分：超结金属氧化物半导体场效应晶体管空白详细规范

Semiconductor Devices Discrete Devices Part 8-2: Blank Detailed Specification for Superjunction Metal Oxide Semiconductor Field Effect Transistors

IEC 60747-8:2010 半导体器件.分立器件.第8部分:场效应晶体管

This part of IEC 60747 gives standards for the following categories of field-effect transistors: – type A: junction-gate type; – type B: insulated-gate depletion (normally on) type; – type C: insulated-gate enhancement (normally off) type. Since a field-effect transistor may have one or several gates, the classification shown below results: NOTE 1 Schottky barrier-gate and insulated gate devices include depletion type devices and enhancement type devices. NOTE 2 MOSFETs for some applications may not have inverse diode characteristics in the data sheet. Special circuit element structures to eliminate body diode are under development for such applications. MOSFET applications such as motor control equipment need to specify the inverse diode characteristics in the MOSFET to use the inverse diode as a free wheeling diode. NOTE 3 The graphical symbol only for type C is used in this standard. The standard equally applies for P-channel and for type A and B devices.

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

IEC 60747-8-4:2004 半导体分立器件.第8-4部分:电力开关装置用金属氧化物半导体场效应晶体管(MOSFETs)

Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.

Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications

BS IEC 60747-8:2001 分立半导体器件和集成电路.场效应晶体管.电源转换场效应晶体管测量方法中附加功率、特性和amds

To be read in conjunction with IEC 60747-1

Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors

IEC 60747-8:2000 半导体装置.第8部分:场效应晶体管

This part of IEC 60747 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion type; - type C: insulated-gate enhancement type.

Semiconductor devices - Part 8: Field-effect transistors

SJ 20789-2000 MOS场效应晶体管热敏参数快速筛选试验方法

本规范规定了MOS场效应晶体管热敏参数快速筛选的试验方法。 本规范适用于MOS场效应晶体管热敏参数快速筛选。

Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor

SJ 50033/121-1997 半导体分立器件.CS3458～CS3460型硅N沟道结型场效应晶体管详细规范

Semiconductor discrete devices.Detail specification for type CS3458～CS3460 silicon N-channel junction mode field-effect transistors

SJ 50033/122-1997 半导体分立器件.CS3684～CS3687型硅N沟道结型场效应晶体管详细规范

Semiconductor discrete devices.Detail specification for type CS3684～CS3687 silicon N-channel junction mode field-effect transistors

BS QC 750114:1996 电子元件质量评估协调制度 半导体器件 离散设备 场效应晶体管 用于开关应用的外壳额定场效应晶体管的空白详细规范

To be read in conjunction with BS QC 700000:1991, BS QC 750100:1986

Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications

SJ 50033/106-1996 半导体分立器件.CS203型砷化镓微波低噪声场效应晶体管详细规范

semiconductor discrete device.Detail specification for type CS203 GaAs microwave Low noise field effect transistor

SJ 50033/85-1995 半导体分立器件.CS141型硅N沟道MOS耗尽型场效应晶体管详细规范

Semiconductor discrete device.Detail specification for type CS141 silicon N-channel MOS deplition mode field-effect transistor

SJ 50033/87-1995 半导体分立器件.CS4091～CS4093型硅N沟道耗尽型场效应晶体管详细规范

Semiconductor discrete device.Detail specification for type CS4091～CS4093 silicon N-channel deplition mode field-effect transistor

SJ 50033/88-1995 半导体分立器件.CS6760和CS6762型硅N沟道增强型场效应晶体管详细规范

Semiconductor discrete device.Detail specification for type CS6760 and CS6762 silicon N-channel enhacement mode field-effect transistor

SJ 50033/83-1995 半导体分立器件.CS139型硅P沟道MOS增强型场效应晶体管详细规范

Semiconductor discrete device.Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor

SJ 50033/86-1995 半导体分立器件.CS5114～CS5116型硅P沟道耗尽型场效应晶体管详细规范

Semiconductor discrete device.Detail specification for type CS5114～CS5116 silicon P-channel deplition mode field-effect transistor

SJ 50033/84-1995 半导体分立器件.CS140型硅N沟道MOS耗尽型场效应晶体管.详细规范

Semiconductor discrete device.Detail specification for type CS140 Silicon N-channel MOS deplition mode field-effect transistor

SJ 50033/89-1995 半导体分立器件.CS6768和CS6770型硅N沟道增强型场效应晶体管详细规范

Semiconductor discrete device.Detail specification for type CS 6768 and CS 6770 silicon N channel enhancement mode field effect transistor