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Silicon carbide

Silicon carbide, Total:327 items.

In the international standard classification, Silicon carbide involves: Cutting tools, Ceramics, Semiconducting materials, Energy and heat transfer engineering in general, Refractories, Dentistry, Kitchen equipment, Materials for the reinforcement of composites, Equipment for the chemical industry, Conducting materials, Thermodynamics and temperature measurements, Analytical chemistry, Non-metalliferous minerals, Testing of metals, Semiconductor devices, Protection against electric shock, Protection of and in buildings, Seals, glands, Air quality, Products of non-ferrous metals, Aircraft and space vehicles in general, Power transmission and distribution networks, Materials for aerospace construction, Road vehicles in general, Electrical engineering in general, Electromechanical components for electronic and telecommunications equipment, Domestic, commercial and industrial heating appliances, Occupational safety. Industrial hygiene, Industrial furnaces.


RO-ASRO, Silicon carbide

Professional Standard - Machinery, Silicon carbide

  • JB/T 10698-2007 Special products of silicon carbide Recrystallized silicon carbide Plate
  • JB/T 10152-2000 Special products of silicon carbide.Slab of silicon nitride bonded silicon carbide
  • JB/T 10376-2002 Special products of silicon carbide Slab of silicon dioxide bonded silicon carbide
  • JB/T 10152-2010 Special products of silicon carbide-Silicon nitride bonded silicon carbide-Plate
  • JB/T 10376-2013 Special products of silicon carbide.Slab of silicon dioxide bonded silicon carbide
  • JB/T 10449-2004 Special product of silicon carbide-Beam of recrystallized silicon carbide
  • JB/T 10891-2008 Special products of silicon carbide.Silicon nitride bonded silicon carbide.Beam
  • JB/T 10645-2006 Special products of silicon carbide Silicon nitride bonded silicon carbide Nozzle tubes
  • JB/T 10614-2006 Special products of silicon carbide. Reaction bonded silicon carbide Beam
  • JB/T 10615-2006 Special products of silicon carbide. Reaction bonded silicon carbide. Rollers
  • JB/T 10697-2007 Special products of silicon carbide Reaction bonded silicon carbide Nozzle tube
  • JB/T 10988-2010 Special products of silicon carbide-Reaction bonded silicon carbide-Desuphating nozzles
  • JB/T 8340-2013 Special products of silicon carbide.Recrystallized silicon carbide thermocouple protection tube
  • JB/T 10044-2015 Special products of silicon carbide.Silicon carbide tube
  • JB/T 3890-2008 Special products of silicon carbide. Silicon carbide heating elements
  • JB/T 3890-2017 Silicon carbide special products silicon carbide rod
  • JB/T 8340-1996 Thermocouple silicon carbide protective tube
  • JB/T 5204-2007 Chemical analysis methods for silicon carbide deoxyden
  • JB/T 5204-1991 Chemical analysis method of silicon carbide deoxidizer
  • JB/T 4035-1999 Carborundum for valve type arrester Technical conditions
  • JB/T 50169-1999 Silicon carbide smelting electric furnace. Grading of energy consumption (only for internal use)
  • JB/T 5700-1991 Electric smelting furnace for silicon carbide not for grinding. Grading of energy consumption
  • JB/T 6374-2006 Specifications for silicon carbide rings of mechanical seal
  • JB/T 6374-1992 Technical conditions of silicon carbide sealing rings for mechanical seals
  • JB/T 58552-1999 Product quality classification of silicon carbide sealing rings for mechanical seals
  • JB/T 56206.1-1999 Product quality classification of FS and FZ series silicon carbide valve arresters for AC system (for internal use)

工业和信息化部, Silicon carbide

  • JB/T 10449-2020 Silicon carbide special products recrystallized silicon carbide square beam
  • JB/T 10645-2020 Silicon carbide special products silicon nitride combined with silicon carbide burner cover
  • JB/T 13945-2020 Silicon carbide special products reaction sintered silicon carbide sagger
  • JB/T 13946-2020 Silicon carbide special products reaction sintered silicon carbide cantilever propeller
  • YB/T 4666-2018 Silicon carbide carbon bricks for submersible furnaces
  • HG/T 5633-2019 Tube silicon carbide heat exchanger
  • JB/T 5204-2018 Chemical analysis method of silicon carbide deoxidizer
  • JC/T 2516-2019 Reactive sintered silicon carbide lining for sand mill
  • JC/T 2402-2017 Liquid phase sintered silicon carbide ceramic sealing ring for ships
  • JB/T 6374-2020 Technical specifications of silicon carbide sealing rings for mechanical seals
  • YB/T 175-2017 Determination of silicon carbide content in emery by hydrofluoric acid gravimetric method

Professional Standard - Building Materials, Silicon carbide

  • JC/T 2013-2010 Special products of silicon carbide.Reaction bonded silicon carbide plate
  • JC/T 2346-2015 Silicon carbide ceramic filters
  • JC/T 2149-2012 Method for constitution analysis of high purity silicon carbide
  • JC/T 2212-2014 Solid-state pressureless sintered silicon carbide ceramic heat exchanger tubes
  • JC/T 2656-2022 Industrial computed tomography (CT) inspection of silicon carbide ceramic products

Professional Standard - Commodity Inspection, Silicon carbide

  • SN/T 0256-1993 Method for the analysis of silicon carbide for export.Determination of silicon carbide
  • SN/T 0355-1995 Rule for inspection of silicon carbideabrasive materials for export
  • SN/T 1039-2002 Method for the sampling and sample preparation of silicon carbide packed in metricton bags for import and export
  • SN/T 1043-2002 Determination of aluminium oxide in silicon carbide for import and export.Spectrophotometric method

Group Standards of the People's Republic of China, Silicon carbide

  • T/ZSA 72-2019 Monocrystalline Silicon Carbide
  • T/IAWBS 001-2021 Silicon carbide single crystal
  • T/CFA 02020501042-2023 Silicon carbide forsmelting of casting
  • T/SAS 0008-2020 lightweight silicon carbide mirror
  • T/CMCA 40016-2021 Silica carbide compound brick for coke dry quenching
  • T/CNIA 0011-2019 SiC Coating by Vapor Deposition
  • T/SAS 0009-2020 lightweight silicon carbide mirror blanks
  • T/IAWBS 005-2018 6 inch polished monocrystalline silicon carbide wafers
  • T/IAWBS 006-2018 Test methods for hybrid silicon carbide modules
  • T/CFA 0202050104-2-2016 Silicon carbide for casting melting technical condition
  • T/NXCL 011-2022 Technical specification of silicon carbide powder for kiln furniture
  • T/CASME 799-2023 CVD silicon carbide coating product technical requirements
  • T/IAWBS 006-2022 Test methods for hybrid silicon carbide modules
  • T/ZZB 0686-2018 High performance pressureless sintering silicon carbide seal rings
  • T/NXCL 001-2021 Submicron silicon carbide powder for fine ceramics
  • T/NXCL 002-2021 Atmospheric pressure sintered silicon carbide ceramic bulletproof material
  • T/CASAS 004.1-2018 The Terminology for Defects in both 4H-SiC Substrates and Epilayers
  • T/CASAS 004.2-2018 The Metallographs Collection for Defects in both 4H-SiC Substrates and Epilayers
  • T/IAWBS 002-2017 Test method for surface defect of silicon carbide epitaxial wafer
  • T/CASAS 003-2018 4H-SiC Epitaxial Wafers for p-IGBT Devices
  • T/ZZB 2283-2021 Ultra-high purity graphite powder for semiconductor silicon carbide crystal
  • T/CASAS 025-2023 8-inch silicon carbide wafer reference marking and dimensions
  • T/CASAS 001-2018 General Specification for Silicon Carbide Schottky Barrier Diodes
  • T/IAWBS 014-2021 Test method for dislocation density of silicon carbide polished wafers
  • T/SCS 000013-2021 Determination of Inorganic Anions(F-、Cl-、Br-、I-) in boron carbide – silicon carbide pellets By Ion Chromatography
  • T/CSAE 232-2021 Efficiency test method of SiC drive motor controller for electric vehicle
  • T/IAWBS 013-2019 The measurement method of resistivity for semi-insulating silicon carbide substrate
  • T/CEC 187-2018 Technical specifications for silicon carbide resonance eliminators for electromagnetic voltage transformers
  • T/SCS 000012-2021 Determination of trace elements in boron carbide–silicon carbide pellets by Inductively coupled plasma optical emission spectrometry
  • T/IAWBS 007-2018 Test method for thickness of 4H silicon carbide homo-epitaxial layers by infrared reflectance
  • T/CNIA 0101-2021 Technical specification for green design product evaluation silicon carbide single crystal polished wafer
  • T/CASAS 026-2023 Test method for minority carrier lifetime in silicon carbide—microwave photoconductive decay
  • T/IAWBS 011-2019 Test methods for measuring resistivity of conductive silicon carbide wafers with a noncontact eddy-current gauge
  • T/IAWBS 003-2017 Determination of Carrier Concentration in SiC Epitaxial Layer_Mercury Probe Capacitance-Voltage Method
  • T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
  • T/ZJATA 0017-2023 Chemical vapor deposition (CVD) epitaxy equipment for preparing silicon carbide semiconductor materials
  • T/CASAS 014-2021 Measuring method for basal plane bending of SiC substrate — High resolution X-ray diffractometry
  • T/CASAS 007-2020 Test Specification for Silicon Carbide(SiC)Field-effect Transistors(MOSFET)Module of Electric Vehicles
  • T/IAWBS 016-2022 X-ray double crystal rocking curve FWHM test method for silicon carbide single wafer
  • T/CASAS 013-2021 Measuring method for testing the density of dislocation in SiC crystal Combined KOH etching and image recognition methods
  • T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor(SiC MOSFET)
  • T/CASAS 032-2023 Test method for the content of metal elements on the surface of silicon carbide wafer—Inductively coupled plasma mass spectrometry
  • T/IAWBS 010-2019 Detection method for measuring the surface Detection method for measuring the surface quality and micropipe densityof polished monocrystalline silicon carbide wafers-Laser Scattering Method

BR-ABNT, Silicon carbide

PL-PKN, Silicon carbide

  • PN H04157-1986 Refractory materials Chemical analysis of silicon carbide and silicon carbide containing products
  • PN M43101-1986 Compressors sic concepts ocabulary
  • PN E06210-1973 Electric resistance batch-type furna- ces with corborundum heating elements Generals requirements and tests

Taiwan Provincial Standard of the People's Republic of China, Silicon carbide

  • CNS 11417-1985 Silicon Carbide Electric Heating Element
  • CNS 9439-1982 Method for Chemical Analysis of Silicon Carbide Abrasives
  • CNS 14143-1998 Methods of chemical analysis for fine silicon carbide powders for fine ceramics

Professional Standard - Ferrous Metallurgy, Silicon carbide

  • YB/T 4035-2007 Silicon nitride bonded silicon carbide bricks
  • YB/T 4167-2007 Burned Al<下标 2>O<下标 3>-SiC bricks
  • YB/T 4349-2013 Silicon carbide-carbon ramming materials for blast furnace
  • YB/T 174.2-2000 Chemical analysis for silicon nitride bonded silicon carbide product.Determination of silicon carbide content.High pressure dissolve specimen method
  • YB 4035-1991 Silicon nitride bonded silicon carbide bricks for blast furnace
  • YB/T 4035-1991 Silicon nitride bonded silicon carbide bricks for blast furnace
  • YB/T 175-2000 The determination of silicon carbide in carborundum
  • YB/T 6113-2023 Silicon carbide thermal conductor for electric heating furnace
  • YB/T 174.1-2000 Chemical analysis for silicon nitride bonded silicon carbide product.Determination of silicon nitride content.High pressure dissolve specimen method
  • YB/T 174.3-2000 Chemical analysis for silicon nitride bonded silicon carbide product.Determination of free silicon content.Molybdenum blue photometric method
  • YB/T 5114-1993 Skid bricks and lower blocks for the small heating furnaces determination of silicon carbide
  • YB/T 174.4-2000 Chemical analysis for silicon nitride bonded silicon carbide product.Determination of iron oxide content.o-Phenanthroline photometric method

American Society for Testing and Materials (ASTM), Silicon carbide

  • ASTM C1835-16(2023) Standard Classification for Fiber Reinforced Silicon Carbide-Silicon Carbide (SiC-SiC) Composite Structures
  • ASTM C1835-16 Standard Classification for Fiber Reinforced Silicon Carbide-Silicon Carbide (SiC-SiC) Composite Structures
  • ASTM C1793-15 Standard Guide for Development of Specifications for Fiber Reinforced Silicon Carbide-Silicon Carbide Composite Structures for Nuclear Applications
  • ASTM C863-00(2016) Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures
  • ASTM C863-00(2005) Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures
  • ASTM C863-00 Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures
  • ASTM C863-00(2010) Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures
  • ASTM C863-00(2022) Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures
  • ASTM E1718-95 Standard Guide for Administrative and Engineering Controls for Silicon Carbide Whisker Work Areas
  • ASTM E1718-95(2004) Standard Guide for Administrative and Engineering Controls for Silicon Carbide Whisker Work Areas

HU-MSZT, Silicon carbide

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Silicon carbide

  • GB/T 2480-2008 Conventional abrasive. Silicon carbide
  • GB/T 2480-1996 Conventional abrasive--Silicon carbide
  • GB/T 21944.1-2008 Special products of silicon carbide.Kiln furniture of reaction bonded silicon carbide.Part 1:Beam
  • GB/T 21944.3-2008 Special products of silicon carbide.Kiln furniture of reaction bonded silicon carbide.Part 3:Rollers
  • GB/T 21944.3-2022 Special products of silicon carbide—Kiln furniture of reaction bonded silicon carbide—Part 3:Rollers
  • GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
  • GB/T 30656-2023 Silicon carbide single crystal polished wafer
  • GB/T 21944.2-2009 Special products of silicon carbide.Kiln furniture of reaction bonded silicon carbide.Part 2:Special beam
  • GB/T 21944.4-2009 Special products of silicon carbide.Kiln furniture of reaction bonded silicon carbide.Part 4:Burner nozzle
  • GB/T 21944.2-2022 Special products of silicon carbide—Kiln furniture of reaction bonded silicon carbide—Part 2: Special shapebeams
  • GB/T 21944.4-2022 Special products of silicon carbide—Kiln furniture of reaction bonded silicon carbide—Part 4: Burner nozzles
  • GB/T 16555.2-1996 Chemical analysis for silicon carbide refractories--Determination of silicon carbide--Gas volumetric method
  • GB/T 16555.1-1996 Chemical analysis for silicon carbide refractories--Determination of silicon carbide--Absorb gravimetric method
  • GB/T 32978-2016 Silicon carbide high temperature ceramic filter element
  • GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
  • GB/T 3045-2003 Abrasive grains--Chemical analysis of silicon carbide
  • GB 7327-1987 Silicon carbide surge arresters for A.C.systems
  • GB/T 7327-2008 Silicon carbide surge arresters for a.c.systems
  • GB/T 32278-2015 Test method for flatness of silicon carbide single wafer
  • GB 11527-1989 Hygienic standard for silicon carbide dust in the air of workplace
  • GB/T 41765-2022 Test method for dislocation density of monocrystalline silicon carbide
  • GB/T 16555-2008 Chemical analysis of refractories containing carbon and silicon carbide or nitride
  • GB/T 41736-2022 High volume fraction SiC particulate aluminum matrix composites
  • GB/T 42905-2023 Infrared reflection method for measuring the thickness of silicon carbide epitaxial layer
  • GB/T 16555.6-1996 Chemical analysis for silicon carbide refractories--Determination of silicon dioxide
  • GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
  • GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers.Chemically etching
  • GB/T 31351-2014 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
  • GB/T 42902-2023 Laser Scattering Method for Testing Surface Defects of Silicon Carbide Epitaxial Wafers
  • GB/T 42271-2022 Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement
  • GB/T 41737-2022 Aluminum matrix composites-Test method for volume fraction of SiC-Dissolution method
  • GB/T 16555.3-1996 Chemical analysis for silicon carbide refractories--determination of free silicon--Gas volumetric method
  • GB 4512-1984 Skid bricks and lower blocks for the small heating furnaces--Determination of silicon carbide
  • GB/T 4654-1984 The general technical specifications on silicon carbide and zircon ceramic infrared heater
  • GB/T 16555.4-1996 Chemical analysis for silicon carbide refractories--Determination of alumina--EDTA gas volumetric method
  • GB/T 43313-2023 Testing of surface quality and microtube density of silicon carbide polished wafers using confocal differential interference method
  • GB/T 16555.5-1996 Chemical analysis for silicon carbide refractories--Determination of ferric oxide--o-Phenanthroline photometric method
  • GB/T 10067.417-2023 Basic specifications for electroheating and electromagnetic processing installations—Part 417:Silicon carbide crystal growth installations

Korean Agency for Technology and Standards (KATS), Silicon carbide

  • KS L 8011-2002 Silicon carbide electric heating element
  • KS P 7115-2006 Dental carborundum points
  • KS P 7209-2007 Dental carborundum wheels
  • KS L 8011-2013 HEATING ELEMENT OF SILICON CARBIDE
  • KS L 8011-2002(2012) HEATING ELEMENT OF SILICON CARBIDE
  • KS L 8011-1982 HEATING ELEMENT OF SILICON CARBIDE
  • KS P 7209-1979 Dental carborundum wheels
  • KS L 6510-2003 Method for chemical analysis of silicon carbide abrasives
  • KS L 6510-1985 Method for chemical analysis of silicon carbide abrasives
  • KS L 6510-2003(2018) Method for chemical analysis of silicon carbide abrasives
  • KS L 3416-2006 Methods for chemical analysis of refractories containing carbon and/or silicon-carbide
  • KS L 1612-1994 Methods for chemical analysis of fine silicon carbide powders for fine ceramics
  • KS L 1612-2016 Methods for chemical analysis of fine silicon carbide powders for fine ceramics
  • KS L 1612-2016(2021) Methods for chemical analysis of fine silicon carbide powders for fine ceramics
  • KS L ISO 21068-2-2012(2017) Chemical analysis of silicon-carbide-containing raw materials and refractory products-Part 2:Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and
  • KS L 3416-2016 Methods for chemical analysis of refractories containing carbon and/or silicon-carbide
  • KS L 3416-2016(2021) Methods for chemical analysis of refractories containing carbon and/or silicon-carbide
  • KS L ISO 21068-2-2012(2022) Chemical analysis of silicon-carbide-containing raw materials and refractory products-Part 2:Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and
  • KS L ISO 21068-2:2012 Chemical analysis of silicon-carbide-containing raw materials and refractory products-Part 2:Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon
  • KS L ISO 21068-1-2012(2022) Chemical analysis of silicon-carbide-containing raw materials and refractory products-Part 1:General information and sample preparation
  • KS L ISO 21068-1-2012(2017) Chemical analysis of silicon-carbide-containing raw materials and refractory products-Part 1:General information and sample preparation

Japanese Industrial Standards Committee (JISC), Silicon carbide

  • JIS R 7501:1978 Silicon carbide electric heating element
  • JIS R 2011:2007 Methods for chemical analysis of refractories containing carbon and/or silicon-carbide
  • JIS R 2011:1998 Methods for chemical analysis of refractories containing carbon and/or silicon-carbide
  • JIS R 1616:1994 Methods for chemical analysis of fine silicon carbide powders for fine ceramics
  • JIS R 1616:2007 Methods for chemical analysis of fine silicon carbide powders for fine ceramics

国家市场监督管理总局、中国国家标准化管理委员会, Silicon carbide

  • GB/T 2480-2022 Conventional abrasive—Silicon carbide
  • GB/T 21944.1-2022 Special products of silicon carbide—Kiln furniture of reaction bonded silicon carbide—Part 1:Beams
  • GB/T 37254-2018 High purity silicon carbide—Determination of trace elements
  • GB/T 34520.9-2021 Test methods of continuous silicon carbide fibers—Part 9:Carbon content
  • GB/T 34520.8-2021 Test methods of continuous silicon carbide fibers—Part 8:Oxygen content
  • GB/T 41153-2021 Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal—Secondary ion mass spectrometry

GOSTR, Silicon carbide

  • GOST R 58016-2017 Ceramic composites. Silicon carbide composites reinforced with silicon carbide fiber. Classification

IN-BIS, Silicon carbide

工业和信息化部/国家能源局, Silicon carbide

  • JB/T 13309-2017 Silicon carbide special products reaction sintering silicon carbide lining and steel shell composite device

IET - Institution of Engineering and Technology, Silicon carbide

Professional Standard - Light Industry, Silicon carbide

Indonesia Standards, Silicon carbide

Professional Standard - Electron, Silicon carbide

  • SJ/T 11502-2015 Specification for polished monocrystalline silicon carbide wafers
  • SJ/T 11864-2022 Semi-insulating silicon carbide single crystal substrate
  • SJ/T 11500-2015 Test method for measuring crystallographic orientation of monocrystalline silicon carbide
  • SJ/T 11501-2015 Test method for determining crystal type of monocrystalline silicon carbide
  • SJ/T 11499-2015 Test method for measuring electrical properties of monocrystalline silicon carbide
  • SJ/T 11865-2022 Φ150 mm n-type silicon carbide substrate for power devices
  • SJ 20858-2002 Measuring methods for electrical parameters of silicon carbide single crystal material
  • SJ/T 11504-2015 Test method for measuring surface quality of polished monocrystalline silicon carbide
  • SJ/T 11503-2015 Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers

Military Standard of the People's Republic of China-General Armament Department, Silicon carbide

  • GJB 9442-2018 Specification for continuous silicon carbide (SiC) fibers
  • GJB 9977-2021 Specification for Silicon Carbide Ceramic Composite Bulletproof Plate
  • GJB 8131-2013 Specification for AlN-SiC used as microwave attenuation composites
  • GJB 10027-2021 Specification for needled carbon/silicon carbide composite products for rocket engines

German Institute for Standardization, Silicon carbide

  • DIN 51075-1:1982 Testing of ceramic materials; chemical analysis of silicon carbide; sample preparation and calculation of silicon carbide content
  • DIN ISO 9286:1998 Abrasive grains and crude - Chemical analysis of silicon carbide (ISO 9286:1997)
  • DIN ISO 9286:2020-12 Abrasive grains and crude - Chemical analysis of silicon carbide (ISO/DIS 9286:2020); Text in German and English / Note: Date of issue 2020-11-20*Intended as replacement for DIN ISO 9286 (1998-01).
  • DIN ISO 9286:1998-01 Abrasive grains and crude - Chemical analysis of silicon carbide (ISO 9286:1997) / Note: To be replaced by DIN ISO 9286 (2020-12).
  • DIN ISO 9286:2023-10 Abrasive grains and crude - Chemical analysis of silicon carbide (ISO 9286:2021)
  • DIN ISO 9286:2020 Abrasive grains and crude - Chemical analysis of silicon carbide (ISO/DIS 9286:2020); Text in German and English
  • DIN 51075-3:1982 Testing of ceramic materials; chemical analysis of silicon carbide; determination of the total carbon content
  • DIN EN ISO 21068-2:2023-07 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 2: Determination of volatile components, total carbon, free carbon, silicon carbide, total and free silicon, fr...
  • DIN 51075-5:1982 Testing of ceramic materials; chemical analysis of silicon carbide; indirect determination of the free carbon content
  • DIN 51075-2:1984 Testing of ceramic materials; chemical analysis of silicon carbide; direct determination of the free carbon content
  • DIN EN 12698-1:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods English version of DIN EN 12698-1:2007-06
  • DIN EN 12698-2:2007-06 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods; German version EN 12698-2:2007
  • DIN EN ISO 21068-2:2008-12 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 2: Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon (ISO 21068-2:2008); Germa...
  • DIN 51075-4:1982 Testing of ceramic materials; chemical analysis of silicon carbide; determination of the free silicon content
  • DIN EN 12698-1:2007-06 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods; German version EN 12698-1:2007
  • DIN 51076-1:1991 Testing of ceramic materials; chemical analysis of silicon carbide as main or minor constituent of ceramic materials; determination of SiC in materials with oxidic components and binding materials
  • DIN 51088:2007 Testing of ceramic raw and basic materials - Determination of mass fractions of metallic trace impurities in silicon carbide powders and granular silicon carbides by optical emission spectrometry and excitation in the DC arc
  • DIN EN 12698-2:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods English version of DIN EN 12698-2:2007-06
  • DIN EN ISO 21068-2:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 2: Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon (ISO 21068-2:2008); English

United States Navy, Silicon carbide

RU-GOST R, Silicon carbide

  • GOST 10153-1970 High refractory silicon carbide products. Specifications
  • GOST 26564.1-1985 Silicon carbide refractory materials and products. Methods for the determination of silicon carbide

Gansu Provincial Standard of the People's Republic of China, Silicon carbide

International Organization for Standardization (ISO), Silicon carbide

  • ISO 9286:1997 Abrasive grains and crude - Chemical analysis of silicon carbide
  • ISO 9286:2021 Abrasive grains and crude — Chemical analysis of silicon carbide
  • ISO/DIS 21068-2 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon — Part 2: Determination of volatile components, total carbon, free carbon, silicon carbide, total and free silicon, free
  • ISO 21068-2:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 2: Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon
  • ISO/FDIS 21068-1:2023 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon
  • ISO 16169:2018 Preparation of silicon carbide and similar materials for analysis by ISO 12677 X-ray fluorescence (XRF) - Fused cast-bead method
  • ISO/DIS 21068-4 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon — Part 4: XRD methods

机械电子工业部, Silicon carbide

  • JB 5204-1991 Chemical analysis method of silicon carbide deoxidizer

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Silicon carbide

  • GB/T 3045-2017 Conventional abrasive—Chemical analysis of silicon carbide
  • GB/T 16555-2017 Chemical analysis of refractories containing carbon and silicon carbide or nitride
  • GB/T 34520.6-2017 Test methods for continuous silicon carbide fiber-Part 6:Resistivity
  • GB/T 34520.1-2017 Test methods for continuous silicon carbide fiber—Part 1:Size content of filament yarn
  • GB/T 34520.2-2017 Test methods for continuous silicon carbide fiber—Part 2:Diameter of single-filament fiber
  • GB/T 34520.3-2017 Test methods for continuous silicon carbide fiber—Part 3:Linear density and density
  • GB/T 34520.4-2017 Test methods for continuous silicon carbide fiber—Part 4:Tensile properties of filament yarn
  • GB/T 34520.7-2017 Test methods for continuous silicon carbide fiber—Part 7 :High temperature strength retention rate
  • GB/T 34520.5-2017 Test methods for continuous silicon carbide fiber—Part 5:Tensile properties of single-filament fiber

Association Francaise de Normalisation, Silicon carbide

  • NF E75-236*NF ISO 9286:2021 Abrasive grains and crude - Chemical analysis of silicon carbide
  • NF ISO 9286:2021 Abrasifs en grains ou en roche - Analyse chimique du carbure de silicium
  • NF EN ISO 21068-2:2008 Analyse chimique des matières premières et des produits réfractaires contenant du carbure de silicium - Partie 2 : détermination de la perte au feu, du carbone total, du carbone libre et du carbure de silicium, de la silice totale et libre, et du s...
  • NF B49-421:1990 Refractory products. Chemical analysis of aluminous, siliceous, silicon carbide, carbon and metallic silicon refractory products.
  • NF B49-423-2*NF EN ISO 21068-2:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 2 : determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon.
  • NF B49-422-1*NF EN 12698-1:2008 Chemical analysis of nitride bonded silicon carbide refractories - Part 1 : chemical methods.
  • NF EN 12698-1:2008 Analyse chimique des produits réfractaires contenant du carbure de silicium lié au nitrure - Partie 1 : méthodes chimiques
  • NF EN 12698-2:2008 Analyse chimique des produits réfractaires contenant du carbure de silicium lié au nitrure - Partie 2 : méthodes de DRX
  • NF B49-422-2*NF EN 12698-2:2008 Chemical analysis of nitride bonded silicon carbide refractories - Part 2 : XRD methods.
  • NF B49-401*NF ISO 16169:2018 Preparation of silicon carbide and similar materials for analysis by ISO 12677 X-ray fluorescence (XRF) - Fused cast-bead method
  • NF ISO 16169:2018 Préparation du carbure de silicium et de matériaux similaires en vue d'une analyse par fluorescence de rayons X (FRX) selon l'ISO 12677 - Méthode de la perle fondue

British Standards Institution (BSI), Silicon carbide

  • BS ISO 9286:2021 Abrasive grains and crude. Chemical analysis of silicon carbide
  • BS ISO 9286:1997 Abrasive grains and crude - Chemical analysis of silicon carbide
  • 20/30400951 DC BS ISO 9286. Abrasive grains and crude. Chemical analysis of silicon carbide
  • BS EN ISO 21068-2:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products -Part 2: Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon
  • 23/30446956 DC BS EN ISO 21068-2. Chemical analysis of raw materials and refractory products containing silicon carbide, silicon nitride, silicon oxynitride and sialon - Part 2. Determination of volatile components, total carbon, free carbon, silicon carbide,…
  • BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
  • BS EN 12698-1:2007 Chemical analysis of nitride bonded silicon carbide refractories - Chemical methods
  • BS EN 12698-2:2007 Chemical analysis of nitride bonded silicon carbide refractories - XRD methods
  • 18/30386543 DC BS EN 63229 Ed.1.0. Semiconductor devices. The classification of defects in gallium nitride epitaxial wafers on silicon carbide substrate
  • 19/30404655 DC BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate
  • BS EN ISO 21068-1:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products -Part 1: General information and sample preparation

CEN - European Committee for Standardization, Silicon carbide

  • PREN 12698-2005 Chemical analysis of nitride bonded silicon carbide refractories

海关总署, Silicon carbide

  • SN/T 1039-2020 Sampling and Preparation Methods for Silicon Carbide Sampling in Ton Packages for Import and Export

AENOR, Silicon carbide

  • UNE 61031:1975 REFRACTORY MATERIALS. GENERAL CHARACTERISTICS OF THE REFRACTORIES OF SILICA CARBIDE
  • UNE-EN 12698-2:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods
  • UNE-EN 12698-1:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods

Military Standard of the People's Republic of China-Commission of Science,Technology and Industry for National Defence, Silicon carbide

  • GJB 5975-2007 Specification for SiC particles reinforced casting A1 matrix composites
  • GJB 5443-2005 Specification for high volume fraction SiCp/Al composites

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., Silicon carbide

  • IEEE C62.1-1989 Standard for Gapped Silicon-Carbide Surge Arresters for AC Power Circuits
  • IEEE C62.2-1987 Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems

Shaanxi Provincial Standard of the People's Republic of China, Silicon carbide

  • DB61/T 1250-2019 General Specification for Sic (Silicon Carbide) Material Semiconductor Discrete Devices

Hebei Provincial Standard of the People's Republic of China, Silicon carbide

  • DB13/T 5118-2019 General technical requirements for 4H SiC N-type homoepitaxial wafers

Anhui Provincial Standard of the People's Republic of China, Silicon carbide

  • DB34/T 2872-2017 Reaction sintered silicon carbide ceramic seals for mechanical seals

Institute of Electrical and Electronics Engineers (IEEE), Silicon carbide

  • IEEE Std C62.1-1989 Gapped silicon-carbide surge arresters for ac power circuits
  • IEEE Std C62.2-1987 Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems
  • IEEE Std C62.2-1987(R1994) IEEE Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems
  • IEEE Std C62.2-1989 IEEE Guide for the Application of Gapped Silicon-Carbide Surge Arresters for Alternating Current Systems

American National Standards Institute (ANSI), Silicon carbide

  • ANSI B74.15-1992 Methods of Chemical Analysis of Silicon Carbide Abrasive Grain and Abrasive Crude

Danish Standards Foundation, Silicon carbide

  • DS/EN ISO 21068-2:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 2: Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon
  • DS/EN 12698-2:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods
  • DS/EN 12698-1:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods

ES-UNE, Silicon carbide

  • UNE-EN ISO 21068-2:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 2: Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon (ISO 21068-2:2008) (Endor...

European Committee for Standardization (CEN), Silicon carbide

  • EN ISO 21068-2:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 2: Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon (ISO 21068-2:2008)
  • EN 12698-2:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods
  • EN 12698-1:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods

Lithuanian Standards Office , Silicon carbide

  • LST EN 12698-2-2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods
  • LST EN ISO 21068-2:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 2: Determination of loss on ignition, total carbon, free carbon and silicon carbide, total and free silica and total and free silicon (ISO 21068-2:2008)
  • LST EN 12698-1-2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods

YU-JUS, Silicon carbide

  • JUS B.D8.240-1982 Refractories. Chemical analysis silicon carbide production and raw materials

Professional Standard - Electricity, Silicon carbide

  • DL/T 2310-2021 Conditions of use of silicon carbide epitaxial wafers for high-voltage power devices in power systems

International Electrotechnical Commission (IEC), Silicon carbide

  • IEC 63229:2021 Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

Professional Standard - Chemical Industry, Silicon carbide

  • HG/T 5632~5633-2019 Graphite hydrogen chloride by-product steam synthesis furnace and tube-and-tube silicon carbide heat exchanger (2019)

CN-STDBOOK, Silicon carbide

  • 图书 3-8978 Abrasives Standard Compilation of Superabrasives, Coated Abrasives and Silicon Carbide Products Volume

Professional Standard - Non-ferrous Metal, Silicon carbide

  • YS/T 1600-2023 Determination of trace impurity elements in silicon carbide single crystal —Glow discharge mass spectrometry

Association of German Mechanical Engineers, Silicon carbide

  • VDI 3392 Blatt 2-2007 Trueing and dressing of grinding wheels - Trueing and dressing of grinding wheels with conventional abrasives (aluminium oxide, silicon carbide)




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