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Silicon oxide silicon infrared peak

Silicon oxide silicon infrared peak, Total:118 items.

In the international standard classification, Silicon oxide silicon infrared peak involves: Insulating fluids, Linear and angular measurements, Testing of metals, Semiconducting materials, Ferroalloys, Air quality, Metalliferous minerals, Products of the chemical industry, Ceramics, Optoelectronics. Laser equipment, Rubber, Ferrous metals, Non-ferrous metals, Medical equipment, Domestic, commercial and industrial heating appliances, Integrated circuits. Microelectronics, Analytical chemistry, Construction materials, Materials for aerospace construction, Semiconductor devices.

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Silicon oxide silicon infrared peak

GB/T 14143-1993 Infrared Absorption Measurement Method of Oxygen Content in the Gap of 300-900μm Silicon Wafer
GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 42905-2023 Infrared reflection method for measuring the thickness of silicon carbide epitaxial layer
GB/T 35306-2023 Determination of Carbon and Oxygen Content in Silicon Single Crystal Low Temperature Fourier Transform Infrared Spectroscopy
GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption
GB/T 4333.10-1990 Methods for chemical analysis of ferrosilicon--The infrared absorption method for the determination of carbon content
GB/T 14847-1993 Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 4700.5-1998 Methods for chemical analysis of calcium-silicon The infrared absorption method for the determination of carbon content
GB/T 5686.5-1988 Methods for chemical analysis of silicomanganese alloy--The infrared absorption method for the determination of carbon content
GB/T 5686.7-1988 Methods for chemical analysis of silicomanganese alloy--The infrared absorption method for the determination of sulfur content
GB/T 4699.6-1988 Methods for chemical analysis of silicochromium--The infrared absorption method for the determination of sulfur content
GB/T 4699.4-1988 Methods for chemical analysis of silicochromium The infrared absorption method for the determination of carbon content
GB/T 32573-2016 Determination of total carbon content of silicon powder Infrared absorption method after combustion in induction furnace
GB/T 4102.7-1983 Methods for chemical analysis of high-titanium slag and rutile--The gravimetric method for the determination of silicon dioxide content
GB/T 4654-1984 The general technical specifications on silicon carbide and zircon ceramic infrared heater
GB/T 4699.4-2008 Ferrochromium and silicochromium. Determination of carbon content. Infrared absorption method and gravimetric method
GB/T 14849.6-2014 Methods for chemical analysis of silicon metal.Part 6:Determination of carbon.Infrared absorption method
GB/T 4699.6-2008 Ferrochromium and silicochromium. Determination of sulfur content. The infrared absorption method and combustion-titration method
GB/T 4700.7-1998 Methods for chemical analysis of calcium-silicon The infrared absorption method and the combustion-potassium iodate titration method for the determination of sulfur content
GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
GB/T 5686.7-2008 Ferromanganese, ferromanganese-silicon, nitrogen-bearing ferromanganese and manganese metal. Determination of sulfur content. Infrared absorption method and combustion-neutralization method
GB/T 5686.7-2022 Ferromanganese，ferromanganese-silicon，nitrogen-bearing ferromanganese and manganese metal—Determination of sulfur content—Infrared absorption method and combustion-neutralization method
GB/T 5686.5-2008 Ferromanganese, ferromanganese-silicon, nitrogen-bearing ferromanganese and manganese metal. Determination of carbon content. The infrared absorption method, the gasometric method, the gravimetric and the coulometric method

Group Standards of the People's Republic of China, Silicon oxide silicon infrared peak

T/HIS 002-2022 Silicon-based infrared gas sensor
T/IAWBS 007-2018 Test method for thickness of 4H silicon carbide homo-epitaxial layers by infrared reflectance
T/CSTM 00254-2020 The pyrolysis products of polycarbosilane–Determination of oxygen by the pulse heating insert gas fusion-infra-red absorption method
T/SCDA 126-2023 Application technical standard of HF fumed silica thermal insulation material for external wall and internal thermal insulation system

国家市场监督管理总局、中国国家标准化管理委员会, Silicon oxide silicon infrared peak

GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
GB/T 38976-2020 Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method
GB/T 4333.10-2019 Ferrosilicon—Determination of carbon content—Infrared absorption method
GB/T 40561-2021 Photovoltaic silicon material—Determination of oxygen—Pulse heating inert gas fusion infrared absorption method
GB/T 36691-2018 Methyl vinyl silicone rubber—Determination of vinyl content—Near infrared spectroscopy
GB/T 4333.7-2019 Ferrosilicon—Determination of sulfur content—Infrared absorption method and chromatographic separation-barium sulfate gravimetric method
GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method
GB/T 40566-2021 Granular polysilicon produced by fluidized bed method—Determination of hydrogen—Pulse heating inert gas fusion infrared absorption method

Professional Standard - Electron, Silicon oxide silicon infrared peak

SJ/T 11491-2015 Test methods for measurement of interstitial oxygen content in silicon by short baseline infrared absorption spectrometry
SJ 20830-2002 General specification for PtSi infrared focal plane arrays detector-dewar assembly
SJ/T 11552-2015 Test methods for measurement of interstitial oxygen content of silicon wafers by infrared absorption with P-polarized radiation incident at the Brewster angle

工业和信息化部, Silicon oxide silicon infrared peak

YB/T 4738-2019 Determination of oxygen content of calcium silicon alloy by inert gas fusion infrared absorption method
YB/T 4582.10-2017 Determination of carbon content in silicon ferronitride by infrared absorption method
YB/T 4582.4-2017 Determination of sulfur content in silicon iron nitride by infrared absorption method
YB/T 5316-2016 Determination of carbon content of calcium silicon alloy by high frequency combustion infrared absorption method
YS/T 1509.2-2021 Chemical analysis method of silicon-carbon composite anode materials Part 2: Determination of carbon content High-frequency heating infrared absorption method

Professional Standard - Ferrous Metallurgy, Silicon oxide silicon infrared peak

YB/T 178.6-2008 Determination of carbon content in silicon-aluminum alloy and silicon-barium-aluminum alloy by infrared absorption method
YB/T 178.7-2008 Determination of sulfur content in silicon-aluminum alloy and silicon-barium-aluminum alloy by infrared absorption method
YB/T 109.6-2012 Silicon barium alloy.Determination of carbon content.The infrared absorption method
YB/T 109.7-2012 Silicon barium alloy.Determination of sulfur content.The infrared absorption method
YB/T 178.6-2000 Methods for chemical analysis silicon-aluminium alloy and silicon-barium-aluminium alloy.The infrared absorption method for the determination of carbon content
YB/T 109.6-1997 Methods for chemical analysis of barium-silicon the infrared absorption method for the determination of carbon content
YB/T 109.7-1997 Methods for chemical analysis of barium-silicon the infrared absorption method for the derermination of sulfur content
YB/T 5316-2006 Calcium silicon alloy chemical analysis method Infrared absorption method for determination of carbon content
YB/T 5317-2016 Calcium silicon alloy.Determination of sulfur content.High frequency combustion with infrared absorption method and the combustion-potassium iodate titration method
YB/T 5317-2006 Calcium silicon alloy chemical analysis method infrared absorption method and combustion potassium iodate titration method for determination of sulfur content

Military Standard of the People's Republic of China-General Armament Department, Silicon oxide silicon infrared peak

GJB 2052-1994 Specification for silicon wafers for infrared charge-coupled devices

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Silicon oxide silicon infrared peak

GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry

Yunnan Provincial Standard of the People's Republic of China, Silicon oxide silicon infrared peak

DB53/T 749-2016 Determination of Moisture in Industrial Silica Fume by Infrared Heating Method

American Society for Testing and Materials (ASTM), Silicon oxide silicon infrared peak

ASTM F1188-00 Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption
ASTM D7948-20 Standard Test Method for Measurement of Respirable Crystalline Silica in Workplace Air by Infrared Spectrometry
ASTM D7948-14 Standard Test Method for Measurement of Respirable Crystalline Silica in Workplace Air by Infrared Spectrometry
ASTM D7948-14e1 Standard Test Method for Measurement of Respirable Crystalline Silica in Workplace Air by Infrared Spectrometry
ASTM C1842-16 Standard Test Method for The Analysis of Boron and Silicon in Uranium Hexfluoride via Fourier-Transform Infrared (FTIR) Spectroscopy
ASTM F1619-95(2000) Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle

Xinjiang Provincial Standard of the People's Republic of China, Silicon oxide silicon infrared peak

DB65/T 3486-2013 Infrared flaw detection method for solar-grade polysilicon block

British Standards Institution (BSI), Silicon oxide silicon infrared peak

BS ISO 19087:2018 Workplace air. Analysis of respirable crystalline silica by Fourier-Transform Infrared spectroscopy

Professional Standard - Non-ferrous Metal, Silicon oxide silicon infrared peak

YS/T 820.8-2012 Methods for chemical analysis of laterite nickel ores.Part 8:Determination of silica content.Potassium silicafluoride titrimetric method
YS/T 514.7-2006 High titanium slag, rutile chemical analysis method gravimetric determination of silicon dioxide content
YS/T 820.23-2012 Methods for chemical analysis of laterite nickel ores.Part 23:Determination of cobalt,iron,nickel,phosphorus,aluminium oxide,calcium oxide,chromium oxide,magnesium oxide,manganese oxide,silicon dioxide and titanium dioxide content.Wavelength dispersive X-
YS/T 514.4-2009 Methods for chemical analysis of high-titanium slag and rutile.Part 4:Determination of silicon dioxide content.Gravimetric analysis and molybdenum blue spectrophotometry

Association Francaise de Normalisation, Silicon oxide silicon infrared peak

NF T77-156:1987 Basic silicones for industrial use. Determination of introduced peroxydes content. Infra-red spectrometric method.
NF T77-162:1988 Basic silicones for industrial use. Determination of ratios phenyl/silicium and phenyl/methyl. Near infrared spectrometric method.
XP X43-243:2002 Workplace air - Fourier transform infrared spectrometric determination of crystalline silica - Sampling using a rotating cup device or a filter membrane
NF X43-243:2022 Air des lieux de travail - Dosage par spectrométrie infrarouge à transformée de Fourier de la silice cristalline - Echantillonnage par dispositif à coupelle tournante ou sur membrane filtrante
NF T77-155:1987 Basic silicones for industrial use. Determination of vinyl groups (content more than 0,1 per cent (m/m)). Near infra-red spectrometric method.

International Organization for Standardization (ISO), Silicon oxide silicon infrared peak

ISO 19087:2018 Workplace air - Analysis of respirable crystalline silica by Fourier-Transform Infrared spectroscopy

Henan Provincial Standard of the People's Republic of China, Silicon oxide silicon infrared peak

DB41/T 1050-2015 Ferrosilicon Chemical Analysis Method Infrared Absorption Method for Determination of Sulfur Content

RU-GOST R, Silicon oxide silicon infrared peak

GOST R ISO 19087-2021 Workplace air. Analysis of respirable crystalline silica by Fourier-Transform Infrared spectroscopy

AENOR, Silicon oxide silicon infrared peak

UNE 81550:2017 Workplace exposure. Determination of crystalline free silica (respirable fractions) in the air. Method by infrared spectrometry

国家食品药品监督管理局, Silicon oxide silicon infrared peak

YY/T 1457-2016 Determination of oligomeric siloxanes in passive surgical implants, silicone gel-filled breast implants

German Institute for Standardization, Silicon oxide silicon infrared peak

DIN 50437:1979 Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
DIN 50438-2:1982 Testing of materials for semiconductor technology; determination of impurty content in silicon by infrared absorption; carbon

Defense Logistics Agency, Silicon oxide silicon infrared peak

DLA SMD-5962-94642-1994 MICROCIRCUIT, DIGITAL, CMOS, ENHANCED MULTI-FUNCTIONAL PERIPHERAL, MONOLITHIC SILICON
DLA SMD-5962-84066 REV G-2006 MICROCIRCUIT, DIGITAL, CMOS, PROGRAMMABLE PERIPHERAL INTERFACE, MONOLITHIC SILICON
DLA SMD-5962-89971-1992 MICROCIRCUIT, DIGITAL, HMOS, REMOTE UNIVERSAL PERIPHERAL INTERFACE, MONOLITHIC SILICON
DLA SMD-5962-96646 REV C-2003 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD EXCLUSIVE OR GATE, MONOLITHIC SILICON
DLA SMD-5962-96816-1996 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE, MONOLITHIC SILICON
DLA SMD-5962-95660 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUAD 2-INPUT EXCLUSIVE OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96611 REV C-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, QUAD EXCLUSIVE OR AND EXCLUSIVE NOR GATES, MONOLITHIC SILICON
DLA SMD-5962-94510 REV A-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASEABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-95654 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUAD 2-INPUT EXCLUSIVE OR GATE, MONOLITHIC SILICON
DLA SMD-5962-88549 REV A-1992 MICROCIRCUIT, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
DLA SMD-5962-93144 REV B-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE, LOGIC DEVICE, MONOLITHIC SILICON
DLA SMD-5962-96815 REV A-2000 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 8-BIT TTL/BTL TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-90989 REV A-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-91772-1993 MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-93248-1993 MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-95783 REV B-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, QUAD 2-INPUT EXCLUSIVE OR GATE, MONOLITHIC SILICON
DLA SMD-5962-95814 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, QUAD 2-INPUT EXCLUSIVE OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-88548 REV A-1992 MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
DLA SMD-5962-88678 REV B-2005 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-88724 REV D-2007 MICROCIRCUIT, DIGITAL, MEMORY, CMOS UV ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-88726 REV E-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ULTRAVIOLET ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-96538 REV C-2007 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT EXCLUSIVE OR GATE, MONOLITHIC SILICON
DLA SMD-5962-85102 REV E-2005 MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 8K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
DLA SMD-5962-91584-1992 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-92062 REV B-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
DLA SMD-5962-89468 REV C-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASEABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-89469 REV B-1994 MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
DLA SMD-5962-89476-1992 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
DLA SMD-5962-93245-1993 MICROCIRCUITS, DIGITAL, MEMORY, CMOS, EXTENDED VOLTAGE, UV ERASABLE, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-96817 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

PL-PKN, Silicon oxide silicon infrared peak

PN Z04018-02-1991 Air purity protection Tests for free crystalline silica content Determination of free crystalline silica in total dust in work places by infrared absorption spectrophotometry
PN Z04018-03-1991 Air purity protection Tests for free crystalline silica content Determination of free crystalline silicain respirable dust in work places by infrared absorption spectrophotomery

Professional Standard - Commodity Inspection, Silicon oxide silicon infrared peak

SN/T 2413-2010 Determination of total carbon and sulfur contents of silicon metal for import and export-Infrared absorption spectromentry

国家质量监督检验检疫总局, Silicon oxide silicon infrared peak

SN/T 4758-2017 Determination of ferric oxide, silicon dioxide and zirconium dioxide content in rutile by inductively coupled plasma atomic emission spectrometry

(U.S.) Ford Automotive Standards, Silicon oxide silicon infrared peak

FORD WSL-M4G349-A-2014 SEALANT, SILICONE RUBBER, ULTRA VIOLET/METHOXY CURE ***TO BE USED WITH FORD WSS-M99P1111-A***