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Semiconductor material purity

Semiconductor material purity, Total:226 items.

In the international standard classification, Semiconductor material purity involves: Analytical chemistry, Insulating fluids, Semiconducting materials, Test conditions and procedures in general, Cutting tools, Testing of metals, Electronic components in general, Printed circuits and boards, Semiconductor devices, Electrical wires and cables, Vocabularies, Waxes, bituminous materials and other petroleum products, Electromechanical components for electronic and telecommunications equipment, Mechanical structures for electronic equipment, Construction materials, Ceramics, Optics and optical measurements, Medical equipment, Surface treatment and coating, Photography, Linear and angular measurements, Electrical engineering in general, Protection against fire.

Group Standards of the People's Republic of China, Semiconductor material purity

T/CNIA 0143-2022 Ultrapure Resin Vessels for Trace Impurity Analysis of Semiconductor Materials
T/CASME 798-2023 Specialized processing tools for semiconductor materials
T/SHDSGY 135-2023 New Energy Semiconductor Silicon Wafer Material Technology
T/ZJATA 0017-2023 Chemical vapor deposition (CVD) epitaxy equipment for preparing silicon carbide semiconductor materials

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semiconductor material purity

GB/T 14264-1993 Semiconductor materials-Terms and definitions
GB/T 14264-2009 Semiconductor materials-Terms and definitions
GB/T 31469-2015 Semiconductor materials cutting fluid
GB/T 14844-1993 Designations of semiconductor materials
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
GB/T 3048.3-1994 Test methods for determining electrical properties of electric cables and wires.Measurement of volumeresistivity of semi-conducting rubbers and plastics
GB/T 3048.3-2007 Test methods for electrical properties of electric cables and wires.Part 3: Test of volume resistivity of semi-conducting rubbers and plastics
GB/T 32699-2016 Test method for purity of multifunctional acrylates used for UV materials.Capillary gas chromatography

German Institute for Standardization, Semiconductor material purity

DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
DIN 50439:1982 Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact
DIN 50447:1995 Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
DIN 50445:1992 Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers
DIN 50454-2:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide
DIN 50454-3:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide
DIN 50601:1985 Metallographic examination; determination of the ferritic or austenitic grain size of steel and ferrous materials
DIN 50448:1998 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe
DIN 50451-6:2014 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 6: Determination of 36 elements in a high-purity ammonium fluoride solution (NH4F) and in etching mixtures of high-purity ammonium fluoride solution
DIN 50451-3:2014-11 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Determination of 31 elements in high-purity nitric acid by ICP-MS
DIN 50451-7:2018-04 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS
DIN 50451-6:2014-11 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 6: Determination of 36 elements in a high-purity ammonium fluoride solution (NH<(Index)4>F) and in etching mixtures of high-purity ammonium ...
DIN 50441-2:1998 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
DIN 50451-3:2014 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Determination of 31 elements in high-purity nitric acid by ICP-MS
DIN 50441-4:1999 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 4: Slice diameter, diamter variation, flat diameter, flat length, flat depth
DIN SPEC 1994:2017-02 Testing of materials for semiconductor technology - Determination of anions in weak acids
DIN 50451-4:2007 Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)
DIN 50442-1:1981 Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slices
DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
DIN 50437:1979 Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
DIN 50443-1:1988 Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography
DIN 50451-4:2007-02 Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)
DIN 50455-1:2009-10 Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods
DIN 50455-1:2009 Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods
DIN 50449-1:1997 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide
DIN EN 60749-39:2007 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006
DIN EN 60749-39:2007-01 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006 / Note: To be r...
DIN EN 62047-2:2007-02 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006
DIN EN 62047-10:2012-03 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
DIN 50433-2:1976 Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of optical reflection figure
DIN EN 62047-18:2014-04 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (IEC 62047-18:2013); German version EN 62047-18:2013
DIN 50454-1:2000 Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide
DIN 50433-3:1982 Testing of materials for semiconductor technology; determination of the orientation of single crystals by means of Laue back scattering
DIN EN 62047-2:2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006
DIN EN 62047-6:2010-07 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009); German version EN 62047-6:2010
DIN 50441-3:1985 Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; determination of flatness deviation of polished slices by means of the multiple beam interference
DIN EN IEC 60749-39:2021-07 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV:2020); English version prEN IEC 60749-39:2020 / Not...
DIN 50433-1:1976 Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of X-ray diffraction
DIN 50452-1:1995-11 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
DIN CEN/TS 16599:2014-07*DIN SPEC 7397:2014-07 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions; German version CEN/TS 16599:2014
DIN EN 62047-14:2012-10 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials (IEC 62047-14:2012); German version EN 62047-14:2012
DIN 50455-2:1999 Testing of materials for semiconductor technology - Methods for the characterisation photoresists - Part 2: Determination of photosensitivity of positive photoresists
DIN 50435:1988 Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method
DIN 50438-2:1982 Testing of materials for semiconductor technology; determination of impurty content in silicon by infrared absorption; carbon
DIN 50452-1:1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
DIN 50452-3:1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
DIN 50455-1:1991 Testing of materials for semiconductor technology; methods for characterizing photoresists; determination of coating thickness with optical methods
DIN 50453-1:1990 Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium monocrystals; gravimetric method
DIN 50455-2:1999-11 Testing of materials for semiconductor technology - Methods for the characterisation photoresists - Part 2: Determination of photosensitivity of positive photoresists
DIN EN 62047-21:2015-04 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (IEC 62047-21:2014); German version EN 62047-21:2014
DIN 50434:1986 Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces
DIN 50431:1988 Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array
DIN 50452-3:1995-10 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
DIN 50456-3:1999 Testing of materials for semiconductor technology - Method for the characterisation of moulding compounds for electronic components - Part 3: Determination of cationic impurities
DIN 50453-1:2023-08 Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 1: Silicium monocrystals, gravimetric method
DIN EN IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV:2020); English version prEN IEC 60749-39:2020
DIN EN IEC 60749-39:2023-10 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2021); German version EN IEC 60749-39:2022 / Note: DIN...
DIN 50452-2:2009-10 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters

RO-ASRO, Semiconductor material purity

STAS 6360-1974 SEMICONDUCTOR MATERIALS AND DEVICES Terminology

HU-MSZT, Semiconductor material purity

MSZ 771/5-1979

Professional Standard - Electron, Semiconductor material purity

SJ/T 11775-2021 Multi-wire saw used for semiconductor materials
SJ/Z 3206.13-1989 General rules for emision spectrum analysis for semiconductor materials
SJ/T 11067-1996 Commonly used terminology for semiconductor photoelectric materials and pyroelectric materials in infrared detecting materials
SJ 20744-1999 General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials

Indonesia Standards, Semiconductor material purity

SNI 19-0429-1989 Guide for sampling of liquid and semi solid materials

国家市场监督管理总局、中国国家标准化管理委员会, Semiconductor material purity

GB/T 14844-2018 Designations of semiconductor materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 36646-2018 Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy
GB/T 37131-2018 Nanotechnologies—Test method of semiconductor nanopowder using UV-Vis diffuse reflectance spectroscopy

British Standards Institution (BSI), Semiconductor material purity

BS IEC 62899-203:2018 Printed electronics. Materials. Semiconductor ink
BS IEC 62951-5:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for thermal characteristics of flexible materials
BS EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
BS EN 62047-18:2013 Semiconductor devices. Micro-electromechanical devices. Bend testing methods of thin film materials
BS EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
21/30428334 DC BS EN IEC 62899-203. Printed electronics. Part 203. Materials. Semiconductor ink
BS EN 62047-10:2011 Semiconductor devices. Micro-electromechanical devices. Micro-pillar compression test for MEMS materials
BS EN 62047-21:2014 Semiconductor devices. Micro-electromechanical devices. Test method for Poisson's ratio of thin film MEMS materials
BS EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Axial fatigue testing methods of thin film materials
BS EN 62047-12:2011 Semiconductor devices. Micro-electromechanical devices. Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
BS EN IEC 60749-39:2022 Tracked Changes. Semiconductor devices. Mechanical and climatic test methods. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
BS EN 62047-14:2012 Semiconductor devices. Micro-electromechanical devices. Forming limit measuring method of metallic film materials
20/30425840 DC BS EN IEC 60749-39. Semiconductor devices. Mechanical and climatic test methods. Part 39. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
BS PD CEN/TS 16599:2014 Photocatalysis. Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
BS IEC 62047-31:2019 Semiconductor devices. Micro-electromechanical devices - Four-point bending test method for interfacial adhesion energy of layered MEMS materials
BS ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics). Ultraviolet light source for testing semiconducting photocatalytic materials
BS ISO 27448:2009 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for self-cleaning performance of semiconducting photocatalytic materials - Measurement of water contact angle
BS ISO 13125:2013 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antifungal activity of semiconducting photocatalytic materials
BS ISO 19635:2016 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antialgal activity of semiconducting photocatalytic materials
BS IEC 62047-38:2021 Semiconductor devices. Micro-electromechanical devices. Test method for adhesion strength of metal powder paste in MEMS interconnection
BS EN 60749-20:2010 Semiconductor devices. Mechanical and climatic test methods. Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat
BS EN 60749-20:2003 Semiconductor devices - Mechanical and climatic test methods - Resistance of plastic-encapsulated SMDs to the combined effect of moisture and soldering heat
BS EN 60749-20:2009 Semiconductor devices - Mechanical and climatic test methods - Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat

International Electrotechnical Commission (IEC), Semiconductor material purity

IEC 62899-203:2018 Printed electronics - Part 203: Materials - Semiconductor ink
IEC 62951-5:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 5: Test method for thermal characteristics of flexible materials
IEC 60749-39:2021 RLV Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
IEC 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
IEC 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
IEC 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
IEC 62047-6:2009 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
IEC 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
IEC 62047-10:2011/COR1:2012 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials; Corrigendum 1
IEC 62047-14:2012 Semiconductor devices - Microelectromechanical devices - Part 14: Forming limit measuring method of metallic film materials
IEC 62047-31:2019 Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials

Shaanxi Provincial Standard of the People's Republic of China, Semiconductor material purity

DB61/T 1250-2019 General Specification for Sic (Silicon Carbide) Material Semiconductor Discrete Devices

American Society for Testing and Materials (ASTM), Semiconductor material purity

ASTM D3004-02 Standard Specification for Extruded Crosslinked and Thermoplastic Semi-Conducting, Conductor and Insulation Shielding Materials
ASTM D3004-97 Standard Specification for Extruded Crosslinked and Thermoplastic Semi-Conducting, Conductor and Insulation Shielding Materials
ASTM D3004-08(2020) Standard Specification for Crosslinked and Thermoplastic Extruded Semi-Conducting, Conductor, and Insulation Shielding Materials
ASTM D6095-06 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
ASTM D6095-12 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
ASTM D6095-99 Standard Test Method for Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
ASTM D6095-05 Standard Test Method for Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
ASTM D3289-17(2022) Standard Test Method for Density of Semi-Solid and Solid Asphalt Materials (Nickel Crucible Method)
ASTM D3289-17 Standard Test Method for Density of Semi-Solid and Solid Asphalt Materials (Nickel Crucible Method)
ASTM D6095-12(2023) Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
ASTM D70-97 Standard Test Method for Specific Gravity and Density of Semi-Solid Bituminous Materials (Pycnometer Method)
ASTM D6095-12(2018) Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials

RU-GOST R, Semiconductor material purity

GOST 22622-1977 Semiconductor materials. Terms and definitions
GOST 32183-2013 Semi-solid bituminous materials. Determination of density by pycnometer
GOST R ISO 6474-2-2014 Implants for surgery. Ceramic materials. Part 2. Composite materials based on a high-purity alumina matrix with zirconia reinforcement

American National Standards Institute （ANSI), Semiconductor material purity

ANSI/ASTM D3004:2008 Specification for Extruded Crosslinked and Thermoplastic Semi-conducting, Conductor and Insulation Shielding Materials
ANSI/ASTM D6095:2012 Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials

Korean Agency for Technology and Standards (KATS), Semiconductor material purity

KS C 6520-2021 Components and materials of semiconductor process —Measurement of wear characteristics by plasma
KS C 6520-2019 Components and materials of semiconductor process —Measurement of wear characteristics by plasma
KS C IEC 60749-39-2006(2021) Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
KS C IEC 60749-39-2006(2016) Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
KS C IEC 60749-39:2006 Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
KS C IEC 62047-18:2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-22:2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-18-2016(2021) Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-22-2016(2021) Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS L ISO 27447-2011(2016) Fine ceramics (advanced ceramics, advanced technical ceramics)－Test method for antibacterial activity of semiconducting photocatalytic materials
KS L ISO 27447-2011(2021) Fine ceramics (advanced ceramics, advanced technical ceramics)－Test method for antibacterial activity of semiconducting photocatalytic materials
KS L ISO 27447:2011 Fine ceramics (advanced ceramics, advanced technical ceramics)－Test method for antibacterial activity of semiconducting photocatalytic materials

Association Francaise de Normalisation, Semiconductor material purity

NF ISO 10677:2011 Céramiques techniques - Sources lumineuses UV destinée aux essais des matériaux photocatalytiques semi-conducteurs
XP CEN/TS 16599:2014 Photocatalyse - Détermination des conditions d'irradiation pour tester les propriétés photocatalytiques de matériaux semi-conducteurs
NF C96-022-39*NF EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
NF C96-022-39*NF EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
NF EN 62047-2:2006 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 2 : méthodes d'essais de traction des matériaux en couche mince
NF EN 62047-18:2014 Dispositifs à semiconducteurs - Dispositif microélectromécaniques - Partie 18 : méthodes d'essai de flexion des matériaux en couche mince
NF EN IEC 60749-39:2022 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 39 : mesure de la diffusivité d'humidité et de l'hydrosolubilité dans les matériaux organiques utilisés dans les composants à semiconducteurs
NF C96-050-10*NF EN 62047-10:2012 Semiconductor devices - Micro-electromechanical devices - Part 10: micro-pillar compression test for MEMS materials
NF C96-050-18*NF EN 62047-18:2014 Semiconductor devices - Micro-electromechanical devices - Part 18 : bend testing methods of thin film materials
NF ISO 14605:2013 Céramiques techniques - Sources lumineuses destinées aux essais des matériaux photocatalytiques semi-conducteurs dans un environnement d'éclairage intérieur
NF C96-050-2*NF EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2 : tensile testing methods of thin film materials.
NF EN 62047-6:2010 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 6 : méthodes d'essais de fatigue axiale des matériaux en couche mince
NF C96-050-21*NF EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21 : test method for Poisson's ratio of thin film MEMS materials
NF C96-050-6*NF EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6 : axial fatigue testing methods of thin film materials
NF EN 62047-21:2014 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 21 : méthode d'essai relative au coefficient de Poisson des matériaux MEMS en couche mince
NF EN 62047-14:2012 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 14 : méthode de mesure des limites de formage des matériaux à couche métallique
NF B44-103*NF ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Ultraviolet light source for testing semiconducting photocatalytic materials
NF C96-050-14*NF EN 62047-14:2012 Semiconductor devices - Micro-electromechanical devices - Part 14 : forming limit measuring method of metallic film materials
XP B44-014*XP CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
NF EN 62047-10:2012 Dispositifs à semiconducteur - Dispositifs microélectromécaniques - Partie 10 : essai de compression utilisant la technique des micro-piliers pour les matériaux des MEMS
NF ISO 22197-4:2021 Céramiques techniques - Méthodes d'essai relatives à la performance des matériaux photocatalytiques semi-conducteurs pour la purification de l'air - Partie 4 : élimination du formaldéhyde
NF A91-113:2004 Non-conductive coatings on non-magnetic electrically conductive basis materials - Measurement of coating thickness - Amplitude-sensitive eddy current method.
NF C32-074:1993 TEST ON GASES EVOLVED DURING THE COMBUSTION OF MATERIALS FROM CABLES. DETERMINATION OF DEGREE OF ACIDITY (CORROSIVITY) OF GASES BY MEASURING PH AND CONDUCTIVITY.
NF ISO 22197-5:2021 Céramiques techniques - Méthodes d'essai relatives à la performance des matériaux photocatalytiques semi-conducteurs pour la purification de l'air - Partie 5 : élimination du mercaptan méthylique

Japanese Industrial Standards Committee (JISC), Semiconductor material purity

JIS R 1750:2012 Fine ceramics -- Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
JIS C 5630-2:2009 Semiconductor devices -- Micro-electromechanical devices-- Part 2: Tensile testing method of thin film materials
JIS C 5630-18:2014 Semiconductor devices -- Micro-electromechanical devices -- Part 18: Bend testing methods of thin film materials
JIS C 5630-6:2011 Semiconductor devices -- Micro-electromechanical devices -- Part 6: Axial fatigue testing methods of thin film materials
JIS R 1712:2022 Fine ceramics (advanced ceramics, advanced technical ceramics) -- Test method for antialgal activity of semiconducting photocatalytic materials

Danish Standards Foundation, Semiconductor material purity

DS/EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
DS/EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
DS/EN 62047-2:2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
DS/EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
DS/EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
DS/EN 62047-14:2012 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
DS/EN ISO 2360:2004 Non-conductive coatings on non-magnetic electrically conductive basis materials - Measurement of coating thickness - Amplitude-sensitive eddy current method

European Committee for Electrotechnical Standardization（CENELEC）, Semiconductor material purity

EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
EN 62047-14:2012 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
EN 62047-2:2006 Semiconductor devices Micro-electromechanical devices Part 2: Tensile testing method of thin film materials
EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials

ES-UNE, Semiconductor material purity

UNE-EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (Endorsed by Asociación Española de Normalización in March of 2022.)
UNE-EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (Endorsed by AENOR in December of 2011.)
UNE-EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (Endorsed by AENOR in November of 2013.)
UNE-EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006). (Endorsed by AENOR in November of 2006.)
UNE-EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices -- Part 6: Axial fatigue testing methods of thin film materials (Endorsed by AENOR in June of 2010.)
UNE-EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (Endorsed by AENOR in November of 2014.)
UNE-EN 62047-14:2012 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials (Endorsed by AENOR in June of 2012.)
UNE-EN 301908-11 V3.2.1:2006 Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006). (Endorsed by AENOR in January of 2007.)
UNE-EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006). (Endorsed by AENOR in January of 2007.)
UNE-EN 300417-5-1 V1.1.3:2006 Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006). (Endorsed by AENOR in January of 2007.)

KR-KS, Semiconductor material purity

KS C IEC 62047-18-2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-22-2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS L ISO 10677-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Ultraviolet light source for testing semiconducting photocatalytic materials
KS L ISO 27447-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for antibacterial activity of semiconducting photocatalytic materials

ICEA - Insulated Cable Engineers Association Inc., Semiconductor material purity

T-32-645-2012 Test Method for Establishing Volume Resistivity Compatibility of Water Blocking Components With Extruded Semiconducting Shield Materials

Insulated Cable Engineers Association （ICEA), Semiconductor material purity

ICEA T-32-645-2012 TEST METHOD FOR ESTABLISHING VOLUME RESISTIVITY COMPATIBILITY OF WATER BLOCKING COMPONENTS WITH EXTRUDED SEMICONDUCTING SHIELD MATERIALS

European Committee for Standardization (CEN), Semiconductor material purity

PD CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions

Lithuanian Standards Office , Semiconductor material purity

LST EN 60749-39-2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006)
LST EN 62047-10-2011 Semiconductor devices - Micro-electromechanical devices -- Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011)
LST EN 62047-2-2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006)
LST EN 62047-6-2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009)
LST EN 62047-14-2012 Semiconductor devices - Micro-electromechanical devices -- Part 14: Forming limit measuring method of metallic film materials (IEC 62047-14:2012)

Standard Association of Australia （SAA）, Semiconductor material purity

AS/NZS 1660.2.3:1998 Test methods for electric cables, cords and conductors - Insulation, extruded semi-conductive screens and non-metallic sheaths - Methods specific to PVC and halogen free thermoplastic materials
AS/NZS 1660.2.2:1998 Test methods for electric cables, cords and conductors - Insulation, extruded semi-conductive screens and non-metallic sheaths - Methods specific to elastomeric, XLPE and XLPVC materials

AT-OVE/ON, Semiconductor material purity

OVE EN IEC 60749-39:2020 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV) (english version)

International Organization for Standardization (ISO), Semiconductor material purity

ISO 13125:2013 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antifungal activity of semiconducting photocatalytic materials
ISO 19635:2016 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antialgal activity of semiconducting photocatalytic materials
ISO 27447:2019 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for antibacterial activity of semiconducting photocatalytic materials
ISO 14605:2013 Fine ceramics (advanced ceramics, advanced technical ceramics).Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
ISO 27447:2009 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antibacterial activity of semiconducting photocatalytic materials

Defense Logistics Agency, Semiconductor material purity

DLA DSCC-DWG-04034-2004 WIRE, ELECTRICAL, COMPOSITE, POLYTETRAFLUOROETHYLENE/POLYIMIDE INSULATED, LIGHT WEIGHT, COPPER CONDUCTOR, TIN COATED, 150 DEG. C, 600 VOLT

Underwriters Laboratories (UL), Semiconductor material purity

UL 2885 BULLETIN-2013 UL Standard for Safety Outline of Investigation for Acid Gas@ Acidity and Conductivity of Combusted Materials
UL 1893 BULLETIN-2013 UL Standard for Safety Outline of Investigation for Acid Gas@ Acidity and Conductivity of Combusted Materials
UL 1893 BULLETIN-2015 UL Standard for Safety Outline of Investigation for Acid Gas@ Acidity and Conductivity of Combusted Materials