H80 半金属与半导体材料综合 标准查询与下载

BS EN 61788-6:2001 超导性.机械特性测量.Cu/Nb-Ti复合超导体的室温拉伸试验

This part of IEC 61788 covers a test method detailing the tensile test procedures to be carried out on Cu/Nb-Ti superconductive composite wires at room temperature. This test is used to measure modulus of elasticity, 0,2 % proof strength of the composite due to yielding of the copper component, and tensile strength. The value for percentage elongation after fracture and the second type of 0,2 % proof strength due to yielding of the Nb-Ti component shall serve only as a reference (see clauses A.1 and A.2). The sample covered by this test procedure should have a round or rectangular cross-section with an area of 0,15 mm to 2 mm and a copper to superconductor volume ratio of 1,0 to 8,0 without the insulating coating.

Superconductivity - Mechanical properties measurement - Room temperature tensile test of Cu/Nb-Ti composite superconductors

BS EN 61788-5:2001 超导性.超导体体积比率测量矩阵.铜与Cu/Nb-Ti复合超导体的超导体体积比率

This part of IEC 61788 covers a test method for the determination of copper to super-conductor volume ratio of Cu/Nb-Ti composite superconducting wire. This test method is intended for use with Cu/Nb-Ti composite superconducting wires with a cross-sectional area of 0,1 mm to 3 mm, a diameter of the Nb-Ti filament(s) of 2 μm to 200 μm, and a copper to superconductor volume ratio of 0,5 or more. The Cu/Nb-Ti composite test conductor discussed in this method has a monolithic structure with a round or rectangular cross-section. This test method is carried out by dissolving the copper with nitric acid. Deviations from this test method that are allowed for routine tests and other specific restrictions are given in this standard. Cu/Nb-Ti conductors beyond the limits in the cross-sectional area, the filament diameter and the copper to superconductor volume ratio could be measured with this present method with an anticipated reduction in precision. Other, more specialized, specimen test geometries may be more appropriate for conductors beyond the limits and have been omitted from this present standard for simplicity and to retain precision. The test method given in this standard is expected to apply to other superconducting composite wires after some appropriate modifications.

Superconductivity - Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconductors

BS EN 61788-2:1999 超导性.临界电流测量.Nb3Sn复合超导体的直流临界电流

This part of IEC 61788 covers a test method for the determination of the d.c. critical current of Nb3Sn composite superconductors which are fabricated by either the bronze process or the internal tin diffusion process and have a copper/non-copper ratio larger than 0,2. This method is intended for use with superconductors which have critical currents of less than 1 000 A and n-values larger than 12 under standard test conditions and at magnetic fields of less than or equal to 0,7 times the upper critical magnetic field. The test specimen is immersed in a liquid helium bath at a measured temperature during testing. The Nb3Sn composite test conductor has a monolithic structure with a total round-cross-sectional area that is less than 2 mm. The specimen geometry used in this test method is an inductively coiled specimen. Deviations from this test method that are allowed for routine tests and other specific restrictions are given in this standard. Nb3Sn conductors with critical currents above 1 000 A or total cross-sectional areas greater than 2 mm can be measured with the present method with an anticipated reduction in precision and a more significant self-field effect (see annex C). Other, more specialized, specimen test geometries may be more appropriate for larger conductor testing which have been omitted from this present standard for simplicity and to retain precision. The test method given in this standard should in principle apply to Nb3Sn composite wires fabricated by any other process, such as the modified jelly-roll process. This method is also expected to apply to other superconducting composite wires after some appropriate modifications.

Superconductivity - Critical current measurement - DC critical current of Nb3Sn composite superconductors

BS EN 61788-3:2003 超导性.临界电流测量.覆银的Bi-2212和Bi-2223氧化超导体的直流临界电流

Superconductivity - Critical current measurement - DC critical current of Ag-sheathed Bi-2212 and Bi-2223 oxide superconductors

BS EN 61788-4:2001 超导性.剩余电阻比测量.Nb-Ti复合超导体的剩余电阻比

This part of IEC 61788 covers a test method for the determination of the residual resistance ratio (RRR) of a composite superconductor comprised of Nb-Ti filaments and Cu, Cu-Ni or Cu/Cu-Ni matrix. This method is intended for use with superconductors that have a rectangular or round cross-section, RRR less than 350, and cross-sectional area less than 3 mm. All measurements shall be done without an applied magnetic field. The method described in the body of this standard is the "reference" method and optional acquisition methods are outlined in annex A.

Superconductivity - Residual resistance ratio measurement - Residual resistance ratio of Nb-Ti composite superconductors

BS EN 61788-3:2001 超导性.临界电流测量.覆银的Bi-2212和Bi-2223氧化超导体的直流临界电流

This part of IEC 61788 covers a test method for the determination of the d.c. critical current of short and straight Ag- or Ag alloy-sheathed Bi-2212 and Bi-2223 oxide superconductors that have a monolithic structure and a shape of round wire or flat or square tape containing mono-or multicores of oxides. This method is intended for use with superconductors that have critical currents less than 500 A and n-values larger than 5. The test is carried out with and without applying external magnetic fields. In the test of the tape specimen in magnetic fields, the magnetic fields are parallel or perpendicular to the tape surface. The test specimen is immersed either in a liquid helium bath or a liquid nitrogen bath during testing. Deviations from this test method that are allowed for routine tests and other specific restrictions are given in this standard. Substantial parts of the test method covered in this standard are in common with, or similar to, those for Nb3Sn composite superconductors (IEC 61788-2). Special features newly found for oxide superconductors may be classified into two groups. The first group is specific to oxide composite superconductors, including mechanical fragility originating from the presence of weak links, cryogen gas bubble formation, aging degradation, magnetic flux flow and creep, large anisotropy, hysteresis in critical current with magnetic field sweep, etc. The second group is due to the short length of the specimen used in the standard. A critical current measurement on such a specimen may easily pick up different voltage signals due to thermal electromotive force, inductive voltage, thermal noise, current redistribution, specimen motion relative to the holder, etc. Current transfer voltages may be present due to the short distance from a current contact to a voltage tap. Short specimen length may reduce mechanical tolerance against the Lorentz force, for example, by promoting the formation of cryogen gas bubbles within the composite.

Superconductivity - Critical current measurement - DC critical current of Ag-sheathed Bi-2212 and Bi-2223 oxide superconductors

ISO/TTA 3:2001 多晶材料 中子衍射法测定剩余应力

This Technology Trends Assessment specifies a test method for determining residual stresses in polycrystalline materials by neutron diffraction. It may be applied to homogeneous and inhomogeneous materials and to test pieces containing distinct phases. The principles of the neutron diffraction technique are outlined. Advice is provided on the crystalline planes on which measurements should be made for different categories of materials. Guidance is provided about the directions in which the measurements should be obtained and of the volume of material which should be examined, in relation to material grain size and the stress state envisaged, when making measurements. Procedures are described for accurately positioning and aligning test pieces in a neutron beam and for precisely defining the volume of material that is sampled when individual measurements are being made. The precautions needed for calibrating the neutron diffraction facilities are described. Techniques for obtaining a stress-free reference are presented. The methods of determining individual elastic strains by neutron diffraction are described in detail. Procedures for analysing the results and for determining their statistical relevance are presented. Advice is provided on how to determine reliable estimates of residual (or applied) stress from the strain data and of how to estimate the uncertainty in the results.

Polycrystalline materials - Determination of residual stresses by neutron diffraction

NF C31-888-2:2001 超导性.第2部分:临界电流测量.Nb3Sn 复合超导体的直流临界电流

Superconductivity - Part 2 : critical current measurement - DC critical current of Nb3Sn composite superconductors.

ASTM F576-00 用椭圆对称法测量硅衬底上绝缘体厚度及折射指数的标准试验方法

1.1 This test method covers the measurement by ellipsometry of the thickness and refractive index of an insulator grown or deposited on a silicon substrate.1.2 This test method uses monochromatic light.1.3 This test method is nondestructive and may be used to measure the thickness and refractive index of any film not absorbing light at the measurement wavelength on any substrate (1) not transparent to light at the measurement wavelength, and ( 2) of a material for which both the refractive index and the absorption coefficient are known at the measurement wavelength.1.4 The precision of this test method is reduced by variations, over regions smaller than the light-beam spot size, in substrate flatness, insulator thickness, and index of refraction.1.5 Film thickness measurements determined by ellipsometry are not unique. When the film thickness is greater than that calculated from the expression N/[2(n 2 sin 20)1/2], where N is an integer, the measurement wavelength, n the index of refraction, and 0 the angle of incidence, the thickness value determined by this expression must be added to the thickness value determined by ellipsometry to obtain the correct film thickness. The value of N must be obtained by another procedure. 1.6 Two procedures for computing the results are provided. If the graphical procedure is used, the measuring wavelength shall be either 546.1 or 632.8 nm, and the angle of incidence shall be 70 177 0.1o.1.7 This test method may be used for referee measurements with computer calculations.1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.

Standard Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry

SJ 20744-1999 半导体材料杂质含量红外吸收光谱分析通用导则

本标准规定了半导体材料中杂质含量的红外吸收分析方法的术语、基本原理、仪器设备、样品制备、测量条件、测量步骤和测量结果的计算。 本标准适用于在红外光谱区为透明的并在该区域产生杂质吸收带的任何半导体单晶材料红外分析方法。

General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials

DIN 50455-2:1999 半导体技术用材料的试验.表征光敏抗蚀剂的方法.第2部分:阳极光敏抗蚀剂的光敏度的测定

The method according to the document covers the characterization of photoresists by comparison of the determined photosensitivity of a single-layer positive photoresist on silicon wafers with a reference photoresist.

Testing of materials for semiconductor technology - Methods for the characterisation photoresists - Part 2: Determination of photosensitivity of positive photoresists

SJ 20713-1998 砷化镓用高纯镓中铜、锰、镁、钒、钛等12种杂质的等离子体光谱分析法

本标准规定了高纯镓中铜、锰、镁、矾、钛等12种金属杂质的等离子体光谱测定方法。

Method for the determination of 12 species of impurities including copper,maganese,magnesium,vanadium,titanium in high-purity gallium used for gallium arsenide by ICP spectrometry

DIN 50449-2:1998 半导体工艺材料试验.通过红外线吸收测定半导体中杂质含量.第2部分:砷化镓中的硼

The method specified in this document covers the determination of the boron content in gallium arsenide by infrared absorption. It is used for semiisolating single-crystal gallium arsenide with a resistivity greater than 10 cm6.

Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide

DIN 50448:1998 半导体工艺材料试验.使用电容式探测器对半绝缘半导体切片电阻率的无接触测定

This dokument covers the contactless determination of the specific electrical resistivity of high ohmic resistant, semi-insulating semiconductor slices.#,,#

Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe

SJ/T 10482-1994 半导体中深能级的瞬态电容.测试方法

本标准规定了用瞬态电容技术中的深能级瞬态谱(DLTS)法测量半导体材料中深能级的测试方法。 本标准适用于测量硅、砷化镓等半导体材料中杂质、缺陷在半导体禁带中产生的深能级。由此法可得到深能级的激活能、浓度、指数前因子A等参数。本标准适用于产生指数形式电容瞬态有关的深能级。

Test method for characterizing semiconductor deep levels by transient capacitance techniques

ASTM E1438-91(2001) 用次级离子质谱法(SIMS)测量溅射深度成形界面的宽度

1.1 This guide provides the SIMS analyst with a method for determining the width of interfaces from SIMS sputtering data obtained from analyses of layered specimens. This guide does not apply to data obtained from analyses of specimens with thin markers or specimens without interfaces such as ion-implanted specimens. 1.2 This guide does not describe methods for the optimization of interface width or the optimization of depth resolution. 1.3 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Guide for Measuring Widths of Interfaces in Sputter Depth Profiling Using SIMS

ASTM E1438-91(1996) 用次级离子质谱法(SIMS)测量溅射深度成形界面的宽度

1.1 This guide provides the SIMS analyst with a method for determining the width of interfaces from SIMS sputtering data obtained from analyses of layered specimens. This guide does not apply to data obtained from analyses of specimens with thin markers or specimens without interfaces such as ion-implanted specimens. 1.2 This guide does not describe methods for the optimization of interface width or the optimization of depth resolution. 1.3 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Guide for Measuring Widths of Interfaces in Sputter Depth Profiling Using SIMS

BOCA ARTICLE 19 NBC-1990 轻质金属合金.第11版

The provisions requiring that the excavation left when an unfit structure has been removed be filled in is an obvious, but often neglected means of protecting the public health and safety.

Lightweight Metal Alloys Eleventh Edition

JIS H 0603:1978 用光电导衰减法测定锗中少数载流子寿命

この規格は，ゲルマニウム単結晶中の少数キャリアのライフタィム(以下，ライフタイムという。)を光導電減衰法により測定する方法について規定したもので，測定しようとする単结晶は均質な組成をもち，そのライフタイムの値は，5～1000μsの範囲のものとする。

Measurement of minority carrier life time in germanium by photoconductive decay method

YS/T 251-1994 核级碳化硼芯块技术条件

Technical conditions for nuclear grade boron carbide pellets