共找到 207 条与 微波管 相关的标准,共 14 页
Measurement of cathode current of reflex klystrons
Measurement of cathode current variation ratio of reflex klystrons as heater current changes
Measurement of interelectrode leakage current of reflex klystrons
Measurement of output power of reflex klystrons
Methods of measurement for dynamic ranges of low noise travelling wave tubes
Methods of measurement for dynamic ranges of low noise travelling wave tubes
Methods of measurement for frequency ranges of low noise travelling wave tubes
Measurement conditions for O-type backward-wave tubes
Measurement of frequency resettability of reflex klystrons
Specifies the general requirements and precautions and describes the general measurements for all devices, oscillator devices and oscillator tubes including the relevant circuits. The appendix deals with forward-wave amplifier tubes of the "O" type.
Measurement of the electrical properties of microwave tubes. Part 2 : General measurements
The basic theory of diodes, triodes and tetrodes is described. Detailed measurements apply to the diode response characteristic, to frequency position and frequency spread. Furthermore, the measurement of unloaded Q, power gain, self-neutralisation frequ
Measurement of the electrical properties of microwave tubes. Part 3 : Disk seal tubes
This part contains all terms used at measuring microwave tubes. These terms are of general application and they are given for pulse operation, for amplifier tubes and for oscillator tubes. Furthermore, terms applicable to disk-seal tubes, magnetrons, hig
Measurement of the electrical properties of microwave tubes. Part 1 : Terminology
Lays down the general measurement requirements and precautions including the measurement circuit generally used. For the methods of measurement applying to the mean r.f. output power, the tuning conditions and the temperature coefficient of frequency, re
Measurement of the electrical properties of microwave tubes. Part 8 : Backward-wave oscillator tubes - "0" type
Describes the general measurement requirements. They apply to reference point and voltages, d.c. primer supply, and holding period. The high-power r.f. load characteristics are given and the firing measurement and resonance tuning including reference fre
Measurement of the electrical properties of microwave tubes. Part 7 : High frequency gas-filled tubes
Details the theory and describes precautions to prevent damage during measurement. The general measuring conditions are outlined referring to handling, electrode voltages and current and to X-radiation hazards. The R.F. measurements including oscillator
Measurement of the electrical properties of microwave tubes. Part 6 : High-power klystrons
Gives general requirements and precautions applying to semiconductor devices and external cavities. The described methods of measurement deal with reflector current, power, pulse, frequency, and spectrum width. Tuning, hysteresis, heater modulation effec
Measurement of the electrical properties of microwave tubes. Part 5 : Low-power oscillator klystrons
General requirements and precautions deal with magnetic field, temperature conditions, pressurizing, radiation dangers, and measuring equipment. The methods of measurement are given; they apply to general measurement, pulsed magnetron measurement and C.W
Measurement of the electrical properties of microwave tubes. Part 4 : Magnetrons
Ratings, characteristics, inspection requirements, etc., to be included in general application category detail specifications.
Rules for the preparation of detail specifications for pulsed fixed-frequency magnetrons of assessed quality
Terms, definitions, test methods and other material necessary to implement fully the detail specifications for magnetrons.
Specification for magnetrons of assessed quality: generic data and methods of test
Measurement of electrical properties of microwave tubes--Part 2: General measurements
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