L42 半导体三极管 标准查询与下载



共找到 279 条与 半导体三极管 相关的标准,共 19

Detail specification for silicon NPN high-frequency high pwer transistors,Type 3DA3

ICS
31.080.30
CCS
L42
发布
1979-07-01
实施
1979-07-01

Detail specification for silicon NPN high-frequency high power transistors,Type 3DA10

ICS
31.080.30
CCS
L42
发布
1979-07-01
实施
1979-07-01

Detail specification for silicon NPN high-frequency high power transistors,Type 3DA92

ICS
31.080.30
CCS
L42
发布
1979-07-01
实施
1979-07-01

Detail specification for silicon NPN high frequency high power transistors,Type 3DA101

ICS
31.080.30
CCS
L42
发布
1979-07-01
实施
1979-07-01

Detail specification for silicon NPN high-frequency high power transistors,Type 3DA21

ICS
31.080.30
CCS
L42
发布
1979-07-01
实施
1979-07-01

Gives ratings, characteristics and inspection requirements for the long lead version of the CV10253, 65 V, 600 mW, low power switching transistor. To be read in conjunction with BS 9364 N016:1979

Detail specification for low power silicon n-p-n switching transistors - 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version) - Full plus additional assessment level

ICS
31.080.30
CCS
L42
发布
1979-01-15
实施
1979-01-15

Ratings, characteristics and inspection requirements for the CV10253, 65 V, 600 mW, low power switching transistor.

Detail specification for low power silicon n-p-n switching transistors - 65 V, planar epitaxial, ambient rated, hermetic encapsulation - Full plus additional assessment level

ICS
31.080.30
CCS
L42
发布
1979-01-15
实施
1979-01-15

Ratings, characteristics and inspection requirements for the CV9543, 25 V, 300 mW, low power switching transistor.

Detail specification for low power silicon p-n-p switching transistors - 25 V, planar epitaxial, ambient rated, hermetic encapsulation - Full plus additional assessment level

ICS
31.080.30
CCS
L42
发布
1979-01-15
实施
1979-01-15

Ratings, characteristics and inspection requirements for the CV8615 and CV8616, 20 V, 300 mW low power switching transistor.

Detail specification for low power silicon n-p-n switching transistors - 20 V, planar epitaxial, ambient rated, hermetic encapsulation - Full plus additional assessment level

ICS
31.080.30
CCS
L42
发布
1978-07-15
实施
1978-07-15

Ratings, characteristics and inspection requirements for the CV9507, 65 V, 500 mW low power switching transistor.

Detail specification for low power silicon p-n-p switching transistors - 65 V, planar epitaxial, ambient rated, hermetic encapsulation - Full plus additional assessment level

ICS
31.080.30
CCS
L42
发布
1978-07-15
实施
1978-07-15

Gives ratings, characteristics and inspection requirements for the long lead version of the CV8615 and CV8616, 20 V, 300 mW low power switching transistors. To be read in conjunction with BS 9364 N007 and N009:1978

Detail specification for low power silicon n-p-n switching transistors - 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version) - Full plus additional assessment level

ICS
31.080.30
CCS
L42
发布
1978-07-15
实施
1978-07-15

Gives ratings, characteristics and inspection requirements for the long lead version of the CV9507, 65 V, 500 mW low power switching transistor. To be read in conjunction with BS 9364 N011:1978

Detail specification for low power silicon p-n-p switching transistors - 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version) - Full plus additional assessment level

ICS
31.080.30
CCS
L42
发布
1978-07-15
实施
1978-07-15

Detail specification for silicon NPN low frequency high power high reverse voltage transistors,Type 3DD103 and 3DD104

ICS
31.080.30
CCS
L42
发布
1976-06-01
实施
1976-06-01

Detail specification for silicon NPN low frequency high power high reverse voltage transistors,Type 3DD101 and 3DD102

ICS
31.080.30
CCS
L42
发布
1976-06-01
实施
1976-06-01

Detail specification for silicon NPN low frequency high power high reversse voltage transistors,Type 3DD100

ICS
31.080.30
CCS
L42
发布
1976-06-01
实施
1976-06-01

Detail specification for silion NPN alloy diffused low-frequency high power transistors,Type 3DD61

ICS
31.080.30
CCS
L42
发布
1974-10-01
实施
1974-10-01

Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD55

ICS
31.080.30
CCS
L42
发布
1974-10-01
实施
1974-10-01

Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD53 and 3DD54

ICS
31.080.30
CCS
L42
发布
1974-10-01
实施
1974-10-01

Detail specification for silicon NPN eqitaxial planar low-frequency high power transistors,Type 3DD50 and 3DD51

ICS
31.080.30
CCS
L42
发布
1974-10-01
实施
1974-10-01

Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD65 and 3DD66

ICS
31.080.30
CCS
L42
发布
1974-10-01
实施
1974-10-01



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