31.080.99 其他半导体分立器件 标准查询与下载
共找到 491 条与 其他半导体分立器件 相关的标准，共 33 页
Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 3: Photoluminescence detection method of defects
- ICS
- 31.080.99
- CCS
- L90
- 发布
- 2023-12-28
- 实施
- 2024-07-01
Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 2: Optical detection method of defects
- ICS
- 31.080.99
- CCS
- L90
- 发布
- 2023-12-28
- 实施
- 2024-07-01
Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 1: Defect classification
- ICS
- 31.080.99
- CCS
- L90
- 发布
- 2023-12-28
- 实施
- 2024-07-01
Semiconductor Devices Part 5-6: Optoelectronic Devices Light Emitting Diodes
- ICS
- 31.080.99
- CCS
- L53
- 发布
- 2023-09-07
- 实施
- 2024-04-01
Micro-Electro-Mechanical Systems (MEMS) Technical Terminology
- ICS
- 31.080.99
- CCS
- L59
- 发布
- 2023-05-23
- 实施
- 2023-09-01
Micro-Electro-Mechanical Systems (MEMS) Technology Gyroscopes
- ICS
- 31.080.99
- CCS
- L59
- 发布
- 2023-05-23
- 实施
- 2023-09-01
本文件规定了晶圆键合后键合强度的测量方法,适用于硅-硅共熔键合、硅-玻璃阳极键合等多种晶圆键合方式,以及MEMS工艺、组装流程中相关结构尺寸的键合强度的评估。 本文件适用于从十微米到几毫米厚的晶圆间的键合强度测量。
Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
- ICS
- 31.080.99
- CCS
- L55
- 发布
- 2022-10-12
- 实施
- 2022-10-12
本文件规定了利用柱状试样测量微尺寸单元与衬底间黏结强度的试验方法。 本文件适用于对衬底上宽度和厚度分别介于1μm~1 mm 的微结构进行黏结强度测试。MEMS器件的微尺寸单元是由通过淀积、电镀、涂胶、光刻等工艺在衬底上制作出的层叠精细薄膜图形组成的。MEMS器件包含大量不同材料间的界面,在制造或使用过程中这些界面偶尔会发生分层。连接界面处的材料结合性决定了黏结强度,此外,界面附近的缺陷和残余应力会随工艺条件的变化而变化,极大地影响黏结强度。 本文件规定了微尺寸单元的黏结强度试验方法,以便于优选MEMS器件的材料和工艺条件。由于组成MEMS器件的材料和尺寸范围非常广泛,用于测量微尺寸单元的仪器也未被全面推广,本文件没有对试样的材料、尺寸和性能做出特别限制。
Semiconductor devices—Micro-electromechanical devices—Bend-and shear-type test methods of measuring adhesive strength for MEMS structures
- ICS
- 31.080.99
- CCS
- L55
- 发布
- 2022-10-12
- 实施
- 2022-10-12
本标准描述了用半导体制造的微机电系统(MEMS)的总规范，规定了用于IECQ-CECC体系质量评定的一般规程，给出了电、光、机械和环境特性的描述和测试的总则。 本标准适用于各类MEMS器件[如传感器、射频MEMS，但不包括光MEMS、生物MEMS、微全分析系统(Micro-TAS)和微能源MEMS]。
Semiconductor devices.Micro-electromechanical devices.Generic specification for MEMS
- ICS
- 31.080.99
- CCS
- L55
- 发布
- 2016-08-29
- 实施
- 2017-03-01
本空白详细规范规定了制定半导体发光数码管详细规范的基本原则。制定该规范范围内的所有详细规范应尽可能与本空白详细规范相一致。 本标准是与GB 4589.1《半导体器件 分立器件和集成电路总规范》和GB 12565《半导体器件 光电子器件分规范》有关的一系列空白详细规范中的一个。
Blank detail specification for LED numeric displays
- ICS
- 31.080.99
- CCS
- L45
- 发布
- 1995-04-06
- 实施
- 1995-11-01
本空白详细规范规定了制订硅双栅场效应晶体管详细规范的基本原则，制订该范围内的所有详细规范应与本空白详细规范一致。
Blank detail specification for silicon dual-qute field-effect transistors
- ICS
- 31.080.99
- CCS
- L44
- 发布
- 1995-01-05
- 实施
- 1995-08-01
本空白详细规范规定了制订管壳额定开头用场效应晶体详细规范的基本原则，制订该范围内的所有详细规范应与本空白详细规范一致。
Biank detail-specification for field-dffect transistors for case-rated swatching application
- ICS
- 31.080.99
- CCS
- L44
- 发布
- 1995-01-05
- 实施
- 1995-08-01
Semiconductor devices. Micro-electromechanical devices - Test method of electrical characteristics after cyclic bending deformation for flexible micro-electromechanical devices
- ICS
- 31.080.99
- CCS
- 发布
- 2024-03-31
- 实施
- 2024-03-31
BS IEC 60747-5-18 Semiconductor devices - Part 5-18: Optoelectronic devices - Light emitting diodes - Test method light emitting diodesof the macro photoluminescence for epitaxial wafers of micro light emitting diodes
- ICS
- 31.080.99
- CCS
- 发布
- 2024-03-29
- 实施
- 2024-03-29
Semiconductor devices. Micro-electromechanical devices - Test methods for dynamic performances of MEMS resonant electric-field-sensitive devices
- ICS
- 31.080.99
- CCS
- 发布
- 2024-02-29
- 实施
- 2024-02-29
IEC 63244-1:2021 provides general requirements and specifications of the semiconductor devices for the performance and reliability evaluations of wireless power transfer and charging systems. For the performance evaluations, this part covers various characterization parameters and symbols, general system diagrams, and test setups and test conditions. This document also describes classifications of the wireless power transfer technologies.
Semiconductor devices - Semiconductor devices for wireless power transfer and charging - Part 1: General requirements and specifications
- ICS
- 31.080.99
- CCS
- 发布
- 2024-01-31
- 实施
IEC 60747-18-4:2023(E) specifies the evaluation method for noise characteristics of lens-free CMOS photonic array sensors. This document includes the measurement setup, test procedure, test items, evaluation method, and test report for noise characteristics of lens-free CMOS photonic array sensors.
Semiconductor devices - Part 18-4: Semiconductor bio sensors - Evaluation method of noise characteristics of lens-free CMOS photonic array sensors
- ICS
- 31.080.99
- CCS
- 发布
- 2024-01-31
- 实施
IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following: a) GaN enhancement and depletion-mode discrete power devices; b) GaN integrated power solutions; c) the above in wafer and package levels. The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.
Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices
- ICS
- 31.080.99
- CCS
- 发布
- 2024-01-31
- 实施
本文件规定了单个芯片以及带金属结构（引入金属层、植球植柱等）芯片的贮存条件和规则，同时为含有芯片的通用和专用封装产品提供了操作指导。 本文件适用于预计贮存时间超过12个月的芯片的长期贮存。
Technical specifications for long-term storage of integrated circuit chips
- ICS
- 31.080.99
- CCS
- I659
- 发布
- 2024-01-26
- 实施
- 2024-02-26
BS IEC 63512. Test method for continuous-switching evaluation of gallium nitride power conversion devices
- ICS
- 31.080.99
- CCS
- 发布
- 2023-09-25
- 实施
- 2023-09-25
