Centar Frontier 是整合了显微镜、CCD数码相机和图像处理系统的全自动研磨抛光系统，其
应用于半导 体行业中电镜样品的制备，特别是横截面样品制备和平面样品的减薄。相对于
传统的制样模式，Centar Frontier 可在短时间内同时完成多个样品的制备工作，大大提高
制样工作的效率和质量。

Vision
* Integrated microscope coupled with a CCD camera
* Revolving turret: Automatic nosepiece with six slots
* Objectives: 1.25x, 2.5x, 5x, 20x, 50x, 100x, 150x
* Magnification: 75x, 150x, 300x, 1200x, 3000x, 6000x, 9000x (on screen)
* Illumination: White light, bright field
Mechanical
* PolishEye(TM) module: On-line polishing sensors, significantly reduce overall polishing time
* High accuracy 5-Axis linear motion
* EAC(TM) (Exact Angle Control) with ±0.003° accuracy
– Automatic theta alignment: -3 to +10°
– Automatic tilt alignment: ±7°
* 90° view mode for incremental polished facet analysis
* Sample cleaning module: Wiping with PVH and drying with Nitrogen before inspection
* Polisher unit:
– Polishing Disks: Any commercial 8” diameter films
– Polishing Force: Computer controlled 130-600gr
– Polishing Speed: 1-200 rpm, in both directions (CW or CCW)
* Industrial PC, Windows XP professional, 17” LCD screen
* ALD (Automatic Lubricant Dispenser): Dispenses lubricants onto the polisher for improved surface quality (Optional)
Physical
* Size: W 40” x D 40” x H 55” (1000 x 1000 x 1400 mm)
* Weight: 880lbs (400kg)
Utilities
* Power: 115/230V @ 60/50Hz single phase, 500W
* Dry Nitrogen: 50-80 psi (3.5-5.5 bar) 6mm O.D. Nylon hose
* Water Supply: D.I. 6mm O.D. Nylon hose
* Water Drain: 1” O.D. Nylon hose, min 40 psi (2.75 bar)
Specimen types
* Dies - All types of dies
* Packages: Solder bumps (C4), wire bonding pads, MCP-SCSP and other stacked dies.
* Electronic components - Capacitors, LEDs,
* Optical components - AWG, V-grooves and others.
* Metallurgical samples
* PCBs
Sample shape & size
* Up to 30x30x6mm3 sample size can be loaded onto the system (for inspection purposes)
* Up to 400mm2 polished facet area (application dependent)
* No minimum size or thickness limitations (samples can be mounted on dummy sample)
* Any shapeSample materials
* IC layers: Al-SiO2-W, CU/Low-K
* IC top layer: Polyamide, Resist, Pads, SI-Nitride
* Substrate: Silicon, SiC, GaAs and other III-V, Rotated substrates (e.g. 45° off), Stressed Si, SOI
* Packages: Organic and ceramic
Performance
* Cross sectioning: 100nm accuracy - 20min; 1μm accuracy - 10min
* Thinning: At plain view or cross section to any desired thickness (down to~ 5um)
~10μm thickness - 45 min; ~ 5μm thickness - 60 min
* Delayering: Interactive layer removal with fast throughput, Hands-Free
* Backside: Automatic or interactive substrate removal down to a few microns, Hands-Free

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注：该产品未在中华人民共和国食品药品监督管理部门申请医疗器械注册和备案，不可用于临床诊断或治疗等相关用途