研究方向：集成电路工艺、微细加工技术和半导体器件。具体包括(1)先进铜互连工艺研究。如超低k互连介质，新型超薄扩散阻挡层，以及纳米尺度Via填充工艺等；(2)原子层淀积(ALD)工艺研究。如ALD高k栅介质，基于ALD工艺的高密度MIM电容等；(3)新型存储器。如纳米晶存储器、RRAM等；(4)基于纳米线和纳米管的晶体管，以及隧穿场效应晶体管(TFET)等新结构器件研究。
Prof. Lauri Niinistö: was born in Helsinki, Finland, in 1941. He received his M.Sc. and D. Techn. Degrees from Helsinki University of Technology in 1968 and 1973, respectively. His doctoral research on the synthesis and crystal structures of metal sulfates and sulfides was partly conducted at the University of Stockholm in 1971-1972. Since 1977 he has been Professor of Inorganic Chemistry at TKK but also worked in France, USA, Austria, and Hungary. He started the world first academic research on ALD technology (originally known as ALE) in 198? and was instrumental in ALD technology development over three decays.