IEC 62047-25:2016
半导体器件 - 微机电器件 - 第25部分:硅基存储器制造技术 - 微接合区域的拉压和剪切强度测量方法
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
IEC 62047-25:2016 发布历史
IEC 62047-25:2016由国际电工委员会 IX-IEC 发布于 2016-08-29，并于 2016-08-31 实施。
IEC 62047-25:2016在国际标准分类中归属于: 31.080.99 其他半导体分立器件。
IEC 62047-25:2016的历代版本如下：
- 2016年 IEC 62047-25:2016 半导体器件 - 微机电器件 - 第25部分:硅基存储器制造技术 - 微接合区域的拉压和剪切强度测量方法
This part of IEC 62047 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology. Micro anchor@ fixed on the substrate through the micro bonding area@ provides mechanical support of the movable sensing/actuating functional components in MEMS devices. With the devices scaling@ the bonding strength degradation@ induced by defects@ contaminations and thermal mismatch stress on bonding surface@ becomes severer. This standard specifies an insitu testing method of the pull-press and shearing strength based on a patterned technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and to prepare the test specimen specially. Since the testing structure in this standard can be implanted in device fabrication as a standard detection pattern@ this document can provide a bridge@ by which the fabrication foundry can give some quantitative reference for the designer.
