DLA SMD-5962-87619 REV G-2002
硅单块 双道功率驱动,直线型微型电路

MICROCIRCUIT, LINEAR, POWER DRIVER, DUAL CHANNEL, MONOLITHIC SILICON

DLA SMD-5962-87619 REV G-2002 发布历史

This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.

DLA SMD-5962-87619 REV G-2002由美国国防后勤局 US-DLA 发布于 2002。

DLA SMD-5962-87619 REV G-2002 在中国标准分类中归属于: L55 微电路综合。

DLA SMD-5962-87619 REV G-2002的历代版本如下：

• 2002年 DLA SMD-5962-87619 REV G-2002 硅单块 双道功率驱动,直线型微型电路

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标准号

DLA SMD-5962-87619 REV G-2002

发布日期

2002年

实施日期

废止日期

无

中国标准分类号

L55

发布单位

US-DLA

适用范围

This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.