DLA SMD-5962-95627 REV D-2005
数字的1024 X 18时钟先入先出硅单片电路线型微电路

MICROCIRCUIT, MEMORY, DIGITAL, 1024 X 18 CLOCKED FIFO, MONOLITHIC SILICON

DLA SMD-5962-95627 REV D-2005 发布历史

This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.

DLA SMD-5962-95627 REV D-2005由美国国防后勤局 US-DLA 发布于 2005-04-04。

DLA SMD-5962-95627 REV D-2005 在中国标准分类中归属于: L55 微电路综合，在国际标准分类中归属于: 31.200 集成电路、微电子学。

DLA SMD-5962-95627 REV D-2005的历代版本如下：

• 2005年04月04日 DLA SMD-5962-95627 REV D-2005 数字的1024 X 18时钟先入先出硅单片电路线型微电路

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标准号

DLA SMD-5962-95627 REV D-2005

发布日期

2005年04月04日

实施日期

废止日期

无

中国标准分类号

L55

国际标准分类号

31.200

发布单位

US-DLA

适用范围

This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.