GB/T 18210-2000
Crystalline silicon photovoltaic(PV) array-On-site measurement of I-V characteristics (English Version)

GB/T 18210-2000
Standard No.
GB/T 18210-2000
Language
Chinese, Available in English version
Release Date
2000
Published By
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest
GB/T 18210-2000
Scope
This International Standard describes procedures for in situ measurements of the characteristics of crystalline silicon photovoltaic arrays and for extrapolation of measured data to standard test conditions (STC) or other selected conditions of temperature and irradiance. Measurement of the IV characteristics of the photovoltaic array under actual site conditions and its extrapolation under acceptance test conditions (ATC), capable of providing (see Appendix A and IECQ QC001002): a) data for power ratings; b) verification of installed Whether the power performance of the square array meets the design specifications; c) detect the difference between the field component characteristics and the laboratory or factory measurement; d) detect the performance degradation of the components and square array relative to the initial field data. Data from field measurements extrapolated to standard test conditions (STC) for a given component can be directly compared with results previously obtained in the laboratory and factory. The condition is that the standard photovoltaic device used in both measurements has the same spectral response and the same spatially distributed response. See the corresponding standard of GB/T 6495 (or IEC 60904). The data measured by the field array includes diodes, cables and mismatch losses. Therefore, they are not directly comparable to the sum of the component data. If a photovoltaic array is composed of several sub-arrays with different elevation angles, azimuth angles, processes, and electrical structures, the procedures described here will only apply to each photovoltaic sub-array.

GB/T 18210-2000 history

  • 2000 GB/T 18210-2000 Crystalline silicon photovoltaic(PV) array-On-site measurement of I-V characteristics



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