GB/T 24576-2009
Test method for measuring the Al fraction in on AlGaAs substrates by high resolution X-ray diffraction (English Version)
- Standard No.
- GB/T 24576-2009
- Language
- Chinese, Available in English version
- Release Date
- 2009
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Latest
- GB/T 24576-2009
- Scope
- This standard specifies the test method for measuring the Al content in the AlGaAs epitaxial layer on the GaAs substrate by high-resolution X-ray diffraction. This method is suitable for the determination of the Al content in the AlGaAs epitaxial layer grown in the <001> direction of the undoped GaAs substrate. When using this method to measure the Al element content, the thickness of the AlGaAs epitaxial layer should be greater than 300 nm.
GB/T 24576-2009 history
- 2009 GB/T 24576-2009 Test method for measuring the Al fraction in on AlGaAs substrates by high resolution X-ray diffraction