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Infrared Silica
Infrared Silica, Total:12 items.
In the international standard classification, Infrared Silica involves: Insulating fluids, Semiconducting materials, Testing of metals, Linear and angular measurements, Ferroalloys.
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Infrared Silica
- GB/T 14143-1993 Infrared Absorption Measurement Method of Oxygen Content in the Gap of 300-900μm Silicon Wafer
- GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption
- GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
- GB/T 35306-2023 Determination of Carbon and Oxygen Content in Silicon Single Crystal Low Temperature Fourier Transform Infrared Spectroscopy
Professional Standard - Electron, Infrared Silica
- SJ/T 11491-2015 Test methods for measurement of interstitial oxygen content in silicon by short baseline infrared absorption spectrometry
- SJ/T 11552-2015 Test methods for measurement of interstitial oxygen content of silicon wafers by infrared absorption with P-polarized radiation incident at the Brewster angle
国家市场监督管理总局、中国国家标准化管理委员会, Infrared Silica
- GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
- GB/T 38976-2020 Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method
American Society for Testing and Materials (ASTM), Infrared Silica
- ASTM F1619-95(2000) Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
Group Standards of the People's Republic of China, Infrared Silica
工业和信息化部, Infrared Silica
- YB/T 4738-2019 Determination of oxygen content of calcium silicon alloy by inert gas fusion infrared absorption method
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Infrared Silica
- GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry