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metal oxide semiconductor field effect transistor

metal oxide semiconductor field effect transistor, Total:35 items.

In the international standard classification, metal oxide semiconductor field effect transistor involves: Semiconductor devices, Semiconducting materials, Integrated circuits. Microelectronics, Electricity. Magnetism. Electrical and magnetic measurements.

European Committee for Electrotechnical Standardization（CENELEC）, metal oxide semiconductor field effect transistor

EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Danish Standards Foundation, metal oxide semiconductor field effect transistor

DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Association Francaise de Normalisation, metal oxide semiconductor field effect transistor

NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
NF EN 62373:2006 Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)

German Institute for Standardization, metal oxide semiconductor field effect transistor

DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
DIN EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010

ES-UNE, metal oxide semiconductor field effect transistor

UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)

Lithuanian Standards Office , metal oxide semiconductor field effect transistor

LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)
LST EN 62373-2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)

Group Standards of the People's Republic of China, metal oxide semiconductor field effect transistor

T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
T/CASAS 016-2022 Transient dual test method for the measurement of the thermal resistance junction to case of silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）

Defense Logistics Agency, metal oxide semiconductor field effect transistor

DLA SMD-5962-88503 REV J-2003 MICROCIRCUIT, LINEAR, DUAL MOSFET DRIVERS, MONOLITHIC SILICON
DLA SMD-5962-87660 REV A-2001 MICROCIRCUITS, LINEAR, MOSFET DRIVER, DUAL POWER
DLA SMD-5962-88770 REV H-2003 MICROCIRCUIT, LINEAR, SINGLE POWER MOSFET DRIVER, MONOLITHIC SILICON
DLA SMD-5962-03247 REV B-2005 MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, DUAL CHANNEL, OPTOCOUPLER
DLA SMD-5962-96897 REV C-2005 MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, SINGLE, HIGH VOLTAGE, MOSFET, MONOLITHIC SILICON

British Standards Institution (BSI), metal oxide semiconductor field effect transistor

BS IEC 60747-8-4:2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability

Professional Standard - Electron, metal oxide semiconductor field effect transistor

SJ/T 11824-2022 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method

PH-BPS, metal oxide semiconductor field effect transistor

PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

International Electrotechnical Commission (IEC), metal oxide semiconductor field effect transistor

IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio

American Society for Testing and Materials (ASTM), metal oxide semiconductor field effect transistor

ASTM F616M-96 Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
ASTM F616M-96(2003) Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)

工业和信息化部, metal oxide semiconductor field effect transistor

SJ/T 9014.8.2-2018 Semiconductor Devices Discrete Devices Part 8-2: Blank Detailed Specification for Superjunction Metal Oxide Semiconductor Field Effect Transistors