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heavily doped carrier concentration

heavily doped carrier concentration, Total:2 items.

In the international standard classification, heavily doped carrier concentration involves: Semiconducting materials.

Professional Standard - Electron, heavily doped carrier concentration

• SJ 2757-1987 Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors
• SJ 3248-1989 Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection

Others:   Measurement Method of Oxygen Concentration in Heavily Doped Silicon Substrate by Secondary Ion Mass Spectrometry, heavily doped carrier concentration.