ZH
RU
ES

Oriental Hafnium Oxide Field Effect Transistor

Oriental Hafnium Oxide Field Effect Transistor, Total:49 items.

In the international standard classification, Oriental Hafnium Oxide Field Effect Transistor involves: Semiconducting materials, Semiconductor devices, Electricity. Magnetism. Electrical and magnetic measurements, Integrated circuits. Microelectronics, Electrical engineering in general.

European Committee for Electrotechnical Standardization（CENELEC）, Oriental Hafnium Oxide Field Effect Transistor

EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Professional Standard - Electron, Oriental Hafnium Oxide Field Effect Transistor

SJ/T 11824-2022 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method

Group Standards of the People's Republic of China, Oriental Hafnium Oxide Field Effect Transistor

T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
T/CASAS 016-2022 Transient dual test method for the measurement of the thermal resistance junction to case of silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）

Association Francaise de Normalisation, Oriental Hafnium Oxide Field Effect Transistor

NF C96-051*NF EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
NF EN 62373:2006 Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)
NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)

German Institute for Standardization, Oriental Hafnium Oxide Field Effect Transistor

DIN EN 62373:2007 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
DIN EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010

British Standards Institution (BSI), Oriental Hafnium Oxide Field Effect Transistor

BS EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
BS EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
BS IEC 60747-8-4:2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 2. Test method for bipolar degradation by body diode operating
20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability

Danish Standards Foundation, Oriental Hafnium Oxide Field Effect Transistor

DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

ES-UNE, Oriental Hafnium Oxide Field Effect Transistor

UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)

Institute of Electrical and Electronics Engineers (IEEE), Oriental Hafnium Oxide Field Effect Transistor

IEEE Std 581-1978 IEEE Standard Definitions, Symbols, and Characterization of Metal-Nitride-Oxide Field-Effect Transistors
IEEE 581-1978 IEEE Standard Definitions, Symbols, and Characterization of Metal-Nitrite-Oxide Field-Effect Transistors

Defense Logistics Agency, Oriental Hafnium Oxide Field Effect Transistor

DLA SMD-5962-88503 REV J-2003 MICROCIRCUIT, LINEAR, DUAL MOSFET DRIVERS, MONOLITHIC SILICON
DLA SMD-5962-87660 REV A-2001 MICROCIRCUITS, LINEAR, MOSFET DRIVER, DUAL POWER
DLA SMD-5962-88770 REV H-2003 MICROCIRCUIT, LINEAR, SINGLE POWER MOSFET DRIVER, MONOLITHIC SILICON
DLA SMD-5962-03247 REV B-2005 MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, DUAL CHANNEL, OPTOCOUPLER
DLA SMD-5962-96897 REV C-2005 MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, SINGLE, HIGH VOLTAGE, MOSFET, MONOLITHIC SILICON

Lithuanian Standards Office , Oriental Hafnium Oxide Field Effect Transistor

LST EN 62373-2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)
LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)

American Society for Testing and Materials (ASTM), Oriental Hafnium Oxide Field Effect Transistor

ASTM F616M-96 Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
ASTM F616M-96(2003) Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
ASTM F996-98 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
ASTM F996-98(2003) Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
ASTM F996-10 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
ASTM F996-11 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

International Electrotechnical Commission (IEC), Oriental Hafnium Oxide Field Effect Transistor

IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio
IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

工业和信息化部, Oriental Hafnium Oxide Field Effect Transistor

SJ/T 9014.8.2-2018 Semiconductor Devices Discrete Devices Part 8-2: Blank Detailed Specification for Superjunction Metal Oxide Semiconductor Field Effect Transistors

PH-BPS, Oriental Hafnium Oxide Field Effect Transistor

PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

AT-OVE/ON, Oriental Hafnium Oxide Field Effect Transistor

OVE EN IEC 63275-2:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation (IEC 47/2680/CDV) (english version)
OVE EN IEC 63275-1:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability (IEC 47/2679/CDV) (english version)