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half wave condition half wave plate

half wave condition half wave plate, Total:253 items.

In the international standard classification, half wave condition half wave plate involves: Semiconductor devices, Integrated circuits. Microelectronics, Electronic components in general, Optoelectronics. Laser equipment, Seals, glands, Pipeline components and pipelines, Rectifiers. Convertors. Stabilized power supply, Welding, brazing and soldering, Rubber and plastics products, Electrical engineering in general, Plastics, Equipment for petroleum and natural gas industries, Installations in buildings, Electromechanical components for electronic and telecommunications equipment, Equipment for the rubber and plastics industries, Piezoelectric and dielectric devices, Components and accessories for telecommunications equipment, Valves.


British Standards Institution (BSI), half wave condition half wave plate

  • BS EN 60747-16-4:2004+A2:2017 Semiconductor devices - Microwave integrated circuits. Switches
  • BS EN 60747-16-10:2004 Semiconductor devices - Technology Approval Schedule (TAS) for monolithic microwave integrated circuits
  • BS EN 60747-16-1:2002+A1:2007 Semiconductor devices — Part 16-1: Microwave integrated circuits — Amplifiers
  • BS EN 60747-16-5:2013+A1:2020 Semiconductor devices - Microwave integrated circuits. Oscillators
  • BS EN 60747-16-3:2002+A2:2017 Semiconductor devices - Microwave integrated circuits. Frequency converters
  • BS EN 60747-16-1:2002+A2:2017 Semiconductor devices - Microwave integrated circuits. Amplifiers
  • BS EN IEC 60747-16-6:2019 Semiconductor devices. Microwave integrated circuits. Frequency multipliers
  • BS EN 60747-16-4:2004 Discrete semiconductor devices - Microwave integrated circuits - Switches
  • BS IEC 60747-4:2007+A1:2017 Semiconductor devices. Discrete devices - Microwave diodes and transistors
  • BS IEC 60747-16-2:2001 Semiconductor devices. Microwave integrated circuits. Frequency prescalers
  • BS EN 60747-16-3:2002+A1:2009 Semiconductor devices — Part 16-3: Microwave integrated circuits — Frequency converters
  • BS EN 60747-16-1:2002 Discrete semiconductor devices and integrated circuits - Microwave integrated circuits - Amplifiers
  • BS 6493 Sec.1.4:1992 Semiconductor devices. Discrete devices. Recommendations for microwave diodes and transistors
  • 21/30436870 DC BS IEC 60747-16-9. Semiconductor devices - Part 16-9. Microwave integrated circuits. Phase shifters
  • 20/30414415 DC BS EN 60747-16-8. Semiconductor devices. Part 16-8. Microwave integrated circuits. Limiters
  • 20/30414411 DC BS EN 60747-16-7. Semiconductor devices. Part 16-7. Microwave integrated circuits. Attenuators
  • 20/30431960 DC BS EN 60747-16-8. Semiconductor devices. Part 16-8. Microwave integrated circuits. Limiters
  • 20/30431959 DC BS EN IEC 60747-16-7. Semiconductor devices. Part 16-7. Microwave integrated circuits. Attenuators
  • 19/30393894 DC BS EN 60747-16-5 AMD1. Semiconductor devices. Part 16-5. Microwave integrated circuits. Oscillators
  • BS IEC 60747-14-11:2021 Semiconductor devices - Semiconductor sensors. Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
  • 23/30472390 DC BS EN 60747-16-11 Semiconductor devices - Part 16-11. Microwave integrated circuits - Power detectors
  • 18/30362458 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
  • 19/30390371 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
  • BS 7838:1996 Specification for corrugated stainless steel semi-rigid pipe and associated fittings for low-pressure gas pipework of up to DN 50

International Electrotechnical Commission (IEC), half wave condition half wave plate

Professional Standard - Electron, half wave condition half wave plate

  • SJ 50033.48-1994 Semiconductor discrete device.Detail specification for type 2DV8CP silicon microwave detector diode
  • SJ 51783/2-1994 Waveguide assemblies,rectangular,90°E-Plane,small radius bend detail specification for
  • SJ 51783/1-1994 Waveguide assemblies,rectangular,90°H Plane,small radius bend detail specification for
  • SJ 2355.7-1983 Method of measurement for peak emission wavelength and spectral radiation bandwidth of light-emitting devices
  • SJ 50033/153-2002 Semiconductor discrete devices Detail specification for type 2CK141 microwave switch diode
  • SJ 50033/77-1995 Semiconductor discrete devices.Detail specification for type 3DA331 Silicon microwave power transistor
  • SJ 50033/152-2002 Semiconductor discrete devices Detail specification for type 2CK140 microwave switch diode
  • SJ 20642.7-2000 Semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module
  • SJ 50033/74-1995 Semiconductor discrete devices.Detail specification for type 3DA325 silicon microwave power transistor
  • SJ 50033/155-2002 Semiconductor discrete devices Detail specification for type 3DG252 silicon microwave linearity transistor
  • SJ 50033/76-1995 Semiconductor discrete devices.Detail specification for type 3DG218 Silicon microwave low-noise transistor
  • SJ 50033/170-2007 Semiconductor discrete devices Detail specification for type 3DA516 silicon microwave pulse power transistor
  • SJ 50033/171-2007 Semiconductor discrete devices Detail specification for type 3DA518 silicon microwave pulse power transistor
  • SJ 50033/172-2007 Semiconductor discrete devices Detail specification for type 3DA519 silicon microwave pulse power transistor
  • SJ 50033/173-2007 Semiconductor discrete devices Detail specification for type 3DA520 silicon microwave pulse power transistor
  • SJ 50033/176-2007 Semiconductor discrete devices Detail specification for type 3DA523 silicon microwave pulse power transistor
  • SJ 50033/169-2004 Semiconductor discrete devices Detail specification for type 3DA510 silicon microwave polse power transistor
  • SJ 50033/168-2004 Semiconductor discrete devices Detail specification for type 3DA509 silicon microwave pulse power transistor
  • SJ 50033/166-2004 Semiconductor discrete devices Detail specification for type 3DA507 silicon microwave pulse power transistor
  • SJ 50033/174-2007 Semiconductor discrete devices Detail specification for type 3DA521 silicon microwave pulse power transistor
  • SJ 50033/156-2002 Semiconductor discrete devices Detail specification for type 3DA505 silicon microwave pulse power transistor
  • SJ 50033/167-2004 Seiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor
  • SJ 50033/175-2007 Semiconductro discrete devices Detail specification for type 3DA522 silicon microwave pulse power transistor
  • SJ 50033/145-2000 Semiconductor discrete devices.Detail specification for type 3DA503 silicon microwave pulse power transistor
  • SJ 50033/157-2002 Semiconductor discrete devices Detail specification for type 3DA506 silicon microwave pulse power transistor
  • SJ 50033/140-1999 Semiconductor discrete devices Detail specification for type 3DA502 silicon microwave pulse power transistor
  • SJ 50033/42-1994 Semiconductor discrete device.Detail specification for type CSO467 GaAs microwave FET
  • SJ 50033/78-1995 Semiconductor discrete devices.Detail specification for type CS0464 GaAs microwave FET
  • SJ 50033/146-2000 Semiconductor discrete devices.Detail specification for type 3DA601 C silicon bipolar power transistor
  • SJ 50033/79-1995 Semiconductor discrete devices.Detail specification for type CS0536 GaAs microwave power FET
  • SJ 50033/120-1997 Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor
  • SJ 50033.51-1994 Semiconductor discrete devices.Detail specification for type CS0558 GaAs microwave dual gate FET
  • SJ 50033.52-1994 semiconductor discrete device.Detail specification for type CS0529 GaAs microwave Power field effect transistor
  • SJ 50033.54-1994 Semiconductor discrete device.Detail specification for type CS0532 GaAs microwave power field effect transistor
  • SJ 50033/119-1997 Semiconductor discrete devices Detail specification for type CS204 GaAs microwave power field effect transistor
  • SJ 50033/81-1995 Semiconductor discrete devices.Detail specification for type CS0524 GaAs microwave power FET
  • SJ 50033/80-1995 Semiconductor discrete devices.Detail specification for type CS0513 GaAs microwave power FET
  • SJ 50033.53-1994 Semiconductor discrete device.Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor
  • SJ 50033/106-1996 semiconductor discrete device.Detail specification for type CS203 GaAs microwave Low noise field effect transistor

Association Francaise de Normalisation, half wave condition half wave plate

  • UTE C93-591U*UTE C93-591:1994 Electronic components. Semi-flexible waveguides with flanges.
  • NF C96-016-10*NF EN 60747-16-10:2005 Semiconductor devices - Part 16-10 : Technology Approval Schedule (TAS) for monolithic microwave integrated circuits
  • NF C96-016-4*NF EN 60747-16-4:2004 Semiconductor devices - Part 16-4 : microwave integrated circuits - Switches
  • NF C96-016-4/A2*NF EN 60747-16-4/A2:2017 Semiconductor devices - Part 16-4 : microwave integrated circuits - Switches
  • NF EN 60747-16-4/A1:2012 Dispositifs à semiconducteurs - Partie 16-4 : circuits intégrés hyperfréquences - Commutateurs
  • NF EN 60747-16-4:2004 Dispositifs à semiconducteurs - Partie 16-4 : circuits intégrés hyperfréquences - Commutateurs
  • NF EN 60747-16-4/A2:2017 Dispositifs à semiconducteurs - Partie 16-4 : circuits intégrés hyperfréquences - Commutateurs
  • NF EN 60747-16-10:2005 Dispositifs à semiconducteurs - Partie 16-10 : format-cadre pour agrément de technologie (TAS) pour circuits intégrés monolithiques hyperfréquences
  • NF C96-016-5*NF EN 60747-16-5:2014 Semiconductor devices - Part 16-5 : microwave integrated circuits - Oscillators
  • NF C96-016-1/A1*NF EN 60747-16-1/A1:2013 Semiconductor devices - Part 16-1 : microwave integrated circuits - Amplifiers
  • NF C96-016-1/A2*NF EN 60747-16-1/A2:2017 Semiconductor devices - Part 16-1 : microwave integrated circuits - Amplifiers
  • NF EN IEC 60747-16-8:2023 Dispositifs à semiconducteurs - Partie 16-8 : circuits intégrés hyperfréquences - Limiteurs
  • NF EN 60747-16-1/A1:2013 Dispositifs à semiconducteurs - Partie 16-1 : circuits intégrés hyperfréquences - Amplificateurs
  • NF EN 60747-16-1:2003 Dispositifs à semiconducteurs - Partie 16-1 : circuits intégrés hyperfréquences - Amplificateurs
  • NF EN IEC 60747-16-6:2019 Dispositifs à semiconducteurs - Partie 16-6 : circuits intégrés hyperfréquences - Multiplicateurs de fréquence
  • NF EN 60747-16-5/A1:2020 Dispositifs à semiconducteurs - Partie 16-5 : circuits intégrés hyperfréquences - Oscillateurs
  • NF EN 60747-16-1/A2:2017 Dispositifs à semiconducteurs - Partie 16-1 : circuits intégrés hyperfréquences - Amplificateurs
  • NF EN IEC 60747-16-7:2023 Dispositifs à semiconducteurs - Partie 16-7 : circuits intégrés hyperfréquences - Atténuateurs
  • NF EN 60747-16-5:2014 Dispositifs à semiconducteurs - Partie 16-5 : Circuits intégrés hyperfréquences - oscillateurs
  • NF EN 60747-16-3/A2:2017 Dispositifs à semiconducteurs - Partie 16-3 : circuits intégrés hyperfréquences - Convertisseurs de fréquence
  • NF EN 60747-16-3/A1:2013 Dispositifs à semiconducteurs - Partie 16-3 : circuits intégrés hyperfréquences - Convertisseurs de fréquence
  • NF EN 60747-16-3:2003 Dispositifs à semiconducteurs - Partie 16-3 : circuits intégrés hyperfréquences - Convertisseurs de fréquence
  • NF C96-050-7*NF EN 62047-7:2011 Semiconductor devices - Micro-electromechanical devices - Part 7 : MEMS BAW filter and duplexer for radio frequency control and selection
  • NF UTE C93-591:1994 Composants électroniques - Guides d'ondes semi-flexibles équipés de brides - Recueil de spécifications particulières entrant dans le cadre de la norme NF C 93-591.
  • NF EN 62047-7:2011 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 7 : filtre et duplexeur BAW MEMS pour la commande et le choix des fréquences radioélectriques
  • NF EN 4050-2:2013 Série aérospatiale - Méthode d'essai applicable aux matériaux métalliques - Contrôle par ultrasons de barres, plaques, demi-produit pour forgeage et pièces forgées - Partie 2 : réalisation de l'essai
  • NF EN 4050-3:2013 Série aérospatiale - Méthode d'essai applicable aux matériaux métalliques - Contrôle par ultrasons de barres, plaques, demi-produit pour forgeage et pièces forgées - Partie 3 : blocs de référence
  • NF EN 4050-1:2013 Série aérospatiale - Méthode d'essai applicable aux matériaux métalliques - Contrôle par ultrasons de barres, plaques, demi-produit pour forgeage et pièces forgées - Partie 1 : exigences générales
  • NF EN 4050-4:2013 Série aérospatiale - Méthode d'essai applicable aux matériaux métalliques - Contrôle par ultrasons de barres, plaques, demi-produit pour forgeage et pièces forgées - Partie 4 : critères d'acceptation

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, half wave condition half wave plate

  • GB/T 20516-2006 Semiconductor devices. discrete devices. Part 4: Microwave devices
  • GB/T 20870.10-2023 Semiconductor Devices Part 16-10: Monolithic Microwave Integrated Circuit Technology Acceptable Procedures
  • GB/T 20870.1-2007 Semiconductor devices Part 16-1 Microwave integrated circuits Amplifiers
  • GB/T 20870.5-2023 Semiconductor Devices Part 16-5: Microwave Integrated Circuit Oscillators
  • GB/T 20870.2-2023 Semiconductor Devices Part 16-2: Microwave Integrated Circuit Prescalers
  • GB/T 19066.3-2003 Specifications of flexible graphite corrugated Metal gaskets
  • GB/T 42709.7-2023 Semiconductor devices microelectromechanical devices Part 7: MEMS bulk acoustic wave filters and duplexers for radio frequency control and selection
  • GB/T 21039.1-2007 Semiconductor devices Discrete devices Part 4-1: Microwave diodes and transistors-Microwave field effect transistors Blank detail specification

American National Standards Institute （ANSI), half wave condition half wave plate

Military Standard of the People's Republic of China-General Armament Department, half wave condition half wave plate

  • GJB 1557A-2021 Semiconductor discrete device microwave diode dimensions
  • GJB 1557-1992 Semiconductor discrete device microwave diode dimensions
  • GJB/Z 41.1-1993 Military semiconductor discrete device series spectrum microwave diodes

German Institute for Standardization, half wave condition half wave plate

  • DIN EN 60747-16-10:2005 Semiconductor devices - Part 16-10: Technology Approval Schedule (TAS) for monolithic microwave integrated circuits (IEC 60747-16-10:2004); German version EN 60747-16-10:2004
  • DIN EN 60747-16-4:2018-04 Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches (IEC 60747-16-4:2004 + A1:2009 + A2:2017); German version EN 60747-16-4:2004 + A1:2011 + A2:2017 / Note: DIN EN 60747-16-4 (2011-08) remains valid alongside this standard until...
  • DIN EN 60747-16-10:2005-03 Semiconductor devices - Part 16-10: Technology Approval Schedule (TAS) for monolithic microwave integrated circuits (IEC 60747-16-10:2004); German version EN 60747-16-10:2004
  • DIN EN 60747-16-1:2007 Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers (IEC 60747-16-1:2001 + A1:2007); German version EN 60747-16-1:2002 + A1:2007
  • DIN EN 60747-16-5:2021-08 Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators (IEC 60747-16-5:2013 + A1:2020 + COR1:2020); German version EN 60747-16-5:2013 + A1:2020 / Note: DIN EN 60747-16-5 (2014-04) remains valid alongside this standard until 2023...
  • DIN EN IEC 60747-16-6:2021-08 Semiconductor devices - Part 16-6: Microwave integrated circuits - Frequency multipliers (IEC 60747-16-6:2019); German version EN IEC 60747-16-6:2019
  • DIN EN 60747-16-1:2017-10 Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers (IEC 60747-16-1:2001 - A1:2007 - A2:2017); German version EN 60747-16-1:2002 + A1:2007 + A2:2017 / Note: DIN EN 60747-16-1 (2007-10) remains valid alongside this standard unt...
  • DIN EN 60747-16-3:2018-04 Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters (IEC 60747-16-3:2002 + A1:2009 + A2:2017); German version EN 60747-16-3:2002 + A1:2009 + A2:2017 / Note: DIN EN 60747-16-3 (2009-11) remains valid alongside this st...
  • DIN EN IEC 60747-16-9:2022 Semiconductor devices - Part 16-9: Microwave integrated circuits - Phase shifters (IEC 47E/768/CD:2021); Text in German and English
  • DIN EN 60747-16-5/A1:2019 Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators (IEC 47E/649/CD:2019); Text in German and English
  • DIN EN IEC 60747-16-7:2021-07 Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators (IEC 47E/734/CD:2020); Text in English / Note: Date of issue 2021-06-04
  • DIN EN IEC 60747-16-9:2022-06 Semiconductor devices - Part 16-9: Microwave integrated circuits - Phase shifters (IEC 47E/768/CD:2021); Text in German and English / Note: Date of issue 2022-05-27
  • DIN EN IEC 60747-16-8:2021-07 Semiconductor devices - Part 16-8: Microwave integrated circuits - Limiters (IEC 47E/735/CD:2020); Text in English / Note: Date of issue 2021-06-04
  • DIN EN IEC 60747-16-8:2021 Semiconductor devices - Part 16-8: Microwave integrated circuits - Limiters (IEC 47E/735/CD:2020); Text in English
  • DIN EN IEC 60747-16-7:2021 Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators (IEC 47E/734/CD:2020); Text in English
  • DIN EN 62047-7:2012-02 Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection (IEC 62047-7:2011); German version EN 62047-7:2011
  • DIN EN IEC 60747-16-6:2021 Semiconductor devices - Part 16-6: Microwave integrated circuits - Frequency multipliers (IEC 60747-16-6:2019); German version EN IEC 60747-16-6:2019
  • DIN EN 60747-16-5:2014 Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators (IEC 60747-16-5:2013); German version EN 60747-16-5:2013
  • DIN EN 60747-16-4:2011 Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches (IEC 60747-16-4:2004 + A1:2009); German version EN 60747-16-4:2004 + A1:2011
  • DIN EN 60747-16-5:2021 Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators (IEC 60747-16-5:2013 + A1:2020 + COR1:2020); German version EN 60747-16-5:2013 + A1:2020
  • DIN EN 62047-7:2012 Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection (IEC 62047-7:2011); German version EN 62047-7:2011
  • DIN EN 60747-16-4:2018 Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches (IEC 60747-16-4:2004 + A1:2009 + A2:2017); German version EN 60747-16-4:2004 + A1:2011 + A2:2017

Danish Standards Foundation, half wave condition half wave plate

ES-UNE, half wave condition half wave plate

  • UNE-EN 60747-16-4:2004/A1:2011 Semiconductor devices -- Part 16-4: Microwave integrated circuits - Switches (Endorsed by AENOR in April of 2011.)
  • UNE-EN 60747-16-4:2004/A2:2017 Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches (Endorsed by Asociación Española de Normalización in December of 2017.)
  • UNE-EN 60747-16-4:2004 Semiconductor devices -- Part 16-4: Microwave integrated circuits - Switches (Endorsed by AENOR in November of 2004.)
  • UNE-EN 60747-16-10:2004 Semiconductor devices -- Part 16-10: Technology Approval Schedule (TAS) for monolithic microwave integrated circuits (Endorsed by AENOR in November of 2004.)
  • UNE-EN IEC 60747-16-6:2019 Semiconductor devices - Part 16-6: Microwave integrated circuits - Frequency multipliers (Endorsed by Asociación Española de Normalización in October of 2019.)
  • UNE-EN 60747-16-5:2013/A1:2020 Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators (Endorsed by Asociación Española de Normalización in October of 2020.)
  • UNE-EN 60747-16-1:2002 Semiconductor devices -- Part 16-1: Microwave integrated circuits - Amplifiers (Endorsed by AENOR in July of 2002.)
  • UNE-EN IEC 60747-16-7:2023 Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators (Endorsed by Asociación Española de Normalización in February of 2023.)
  • UNE-EN IEC 60747-16-8:2023 Semiconductor devices - Part 16-8: Microwave integrated circuits - Limiters (Endorsed by Asociación Española de Normalización in February of 2023.)
  • UNE-EN 60747-16-5:2013 Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators (Endorsed by AENOR in October of 2013.)
  • UNE-EN 60747-16-3:2002/A2:2017 Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters (Endorsed by Asociación Española de Normalización in January of 2018.)
  • UNE-EN 60747-16-3:2002/A1:2009 Semiconductor devices -- Part 16-3: Microwave integrated circuits - Frequency converters (Endorsed by AENOR in July of 2009.)
  • UNE-EN 60747-16-3:2002 Semiconductor devices -- Part 16-3: Microwave integrated circuits - Frequency converters. (Endorsed by AENOR in December of 2002.)
  • UNE-EN 60747-16-1:2002/A1:2007 Semiconductor devices -- Part 16-1: Microwave integrated circuits - Amplifiers (IEC 60747-16-1:2001/A1:2007). (Endorsed by AENOR in May of 2007.)
  • UNE-EN 62047-7:2011 Semiconductor devices - Micro-electromechanical devices - Part 7: MEMS BAW filter and duplexer for radio frequency control and selection (Endorsed by AENOR in November of 2011.)

European Committee for Electrotechnical Standardization（CENELEC）, half wave condition half wave plate

  • EN 60747-16-5:2013 Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators
  • EN 60747-16-5:2013/A1:2020 Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators
  • EN IEC 60747-16-6:2019 Semiconductor devices - Part 16-6: Microwave integrated circuits - Frequency multipliers
  • EN 60747-16-10:2004 Semiconductor devices Part 16-10: Technology Approval Schedule (TAS) for monolithic microwave integrated circuits
  • EN 60747-16-4:2004 Semiconductor devices Part 16-4: Microwave integrated circuits - Switches (Incorporates Amendment A1: 2011)
  • EN 60747-16-3:2002 Semiconductor devices Part 16-3: Microwave integrated circuits - Frequency converters (Incorporates Amendment A1: 2009)
  • EN 60747-16-1:2002 Semiconductor devices Part 16-1: Microwave integrated circuits - Amplifiers (Incorporates Amendment A1: 2007)

Korean Agency for Technology and Standards (KATS), half wave condition half wave plate

  • KS C IEC 60747-4:2006 Semiconductor devices－Discrete devices－Part 4：Microwave diodes and transistors
  • KS C IEC 60747-4:2017 Semiconductor devices－Discrete devices－Part 4：Microwave diodes and transistors
  • KS C IEC 60747-4:2022 Semiconductor devices — Discrete devices — Part 4: Microwave diodes and transistors
  • KS C IEC 60747-4-1-2002(2017) Semiconductor devices－Discrete devices－Part 4－1：Microwave diodes and transistors－Microwave field effect transistors－Blank detail specification
  • KS C IEC 60747-4-1:2002 Semiconductor devices－Discrete devices－Part 4－1：Microwave diodes and transistors－Microwave field effect transistors－Blank detail specification
  • KS C IEC 60747-4-2-2002(2022) Semiconductor devices－Discrete devices－Part 4－2：Microwave diodes and transistors－Integrated-circuit microwave amplifiers－Blank detail specification
  • KS C IEC 60747-4-2-2002(2017) Semiconductor devices－Discrete devices－Part 4－2：Microwave diodes and transistors－Integrated-circuit microwave amplifiers－Blank detail specification
  • KS C IEC 60747-4-2:2002 Semiconductor devices－Discrete devices－Part 4－2：Microwave diodes and transistors－Integrated-circuit microwave amplifiers－Blank detail specification
  • KS C IEC 62047-7-2015(2020) SEMICONDUCTOR DEVICES ― MICRO-ELECTROMECHANICAL DEVICES ― Part 7: MEMS BAW filter and duplexer for radio frequency control and selection
  • KS C IEC 62047-7:2015 SEMICONDUCTOR DEVICES ― MICRO-ELECTROMECHANICAL DEVICES ― Part 7: MEMS BAW filter and duplexer for radio frequency control and selection

KR-KS, half wave condition half wave plate

  • KS C IEC 60747-4-2017 Semiconductor devices－Discrete devices－Part 4：Microwave diodes and transistors
  • KS C IEC 60747-4-2022 Semiconductor devices — Discrete devices — Part 4: Microwave diodes and transistors

未注明发布机构, half wave condition half wave plate

  • BS IEC 60747-4:2007+A1:2017(2020) Semiconductor devices — Discrete devices Part 4 : Microwave diodes and transistors
  • BS 7838:1996(2012) Specification for Corrugated stainless steel semi - rigid pipe and associated fittings for low - pressure gas pipework of up to DN 50

Professional Standard - Machinery, half wave condition half wave plate

  • JB/T 12669-2016 Specification of corrugated metallic gaskets with non-metallic covering layers

Defense Logistics Agency, half wave condition half wave plate

  • DLA SMD-5962-90504 REV C-1997 MICROCIRCUIT, DIGITAL, CMOS, BINARY FILTER AND TEMPLATE MATCHER, MONOLITHIC SILICON
  • DLA SMD-5962-89483 REV D-1996 MICROCIRCUIT, LINEAR, CMOS, QUAD, UNIVERSAL FILTER BUILDING BLOCK, MONOLITHIC SILICON
  • DLA MIL-PRF-19500/446 E-2008 SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES SPA25, SPB25, SPC25, AND SPD25, JANTX AND JANTXV
  • DLA MIL-W-3970/23 A-2009 WAVEGUIDE ASSEMBLIES, RIGID, CAST, 90-DEGREE E-PLANE BEND, MITER AND RADIUS-BACK MITER, FULL CORRAL
  • DLA MIL-PRF-19500/446 E VALID NOTICE 1-2013 Semiconductor Device, Silicon, High-Power, Single Phase, Full Wave Bridge Rectifier, Types SPA25, SPB25, SPC25, and SPD25 JAN, JANTX, and JANTXV
  • DLA SMD-5962-89947 REV A-2005 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 12-STAGE RIPPLE-CARRY BINARY COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA MIL-PRF-19500/469 D-2008 SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES M19500/469-01, -02, -03, -04, -05, JANTX AND JANTXV
  • DLA SMD-5962-95749 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL DECADE RIPPLE COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95737 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, 4-BIT BINARY RIPPLE COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-89733 REV B-1992 MICROCIRCUITS, DIGITAL, FAST CMOS, UP/DOWN BINARY COUNTER WITH PRESET AND RIPPLE CLOCK, TTL COMPATIBLE, MONOLITHIC SILICON
  • DLA SMD-5962-96775 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT INCIDENT-WAVE SWITCHING BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

AT-OVE/ON, half wave condition half wave plate

  • OVE EN 60747-16-5-2021 Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators (german version)
  • OVE EN IEC 60747-16-7:2021 Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators (IEC 47E/757/CDV) (english version)
  • OVE EN IEC 60747-16-6:2021 Semiconductor devices - Part 16-6: Microwave integrated circuits - Frequency multipliers ((IEC 60747-16-6:2019) EN IEC 60747-16-6:2019) (german version)

Lithuanian Standards Office , half wave condition half wave plate

  • LST EN 60747-16-10-2004 Semiconductor devices. Part 16-10: Technology Approval Schedule (TAS) for monolithic microwave integrated circuits (IEC 60747-16-10:2004)
  • LST EN 60747-16-4-2004 Semiconductor devices. Part 16-4: Microwave integrated circuits. Switches (IEC 60747-16-4:2004)
  • LST EN 60747-16-3-2003 Semiconductor devices. Part 16-3: Microwave integrated circuits. Frequency converters (IEC 60747-16-3:2002)
  • LST EN 60747-16-1-2003 Semiconductor devices. Part 16-1: Microwave integrated circuits. Amplifiers (IEC 60747-16-1:2001)
  • LST EN 60747-16-4-2004/A1-2011 Semiconductor devices -- Part 16-4: Microwave integrated circuits - Switches (IEC 60747-16-4:2004/A1:2009)
  • LST EN 60747-16-1-2003/A1-2007 Semiconductor devices - Part 16-1: Microwave integrated circuits - Amplifiers (IEC 60747-16-1:2001/A1:2007)
  • LST EN 60747-16-5/A1-2020 Semiconductor devices - Part 16-5: Microwave integrated circuits - Oscillators (IEC 60747-16-5:2013/A1:2020)
  • LST EN 62047-7-2011 Semiconductor devices - Micro-electromechanical devices -- Part 7: MEMS BAW filter and duplexer for radio frequency control and selection (IEC 62047-7:2011)

Association of German Mechanical Engineers, half wave condition half wave plate

  • DVS 2216-2-1992 "Ultrasonic Joining of Moulded Parts and Semi-Finished Parts of Thermoplastic Polymers in Mass Production - Ultrasonic Welding, Methods and Features"
  • DVS 2216-5-1995
  • DVS 2216-4-1992 "Ultrasonic joining of moulded parts and semi-finished parts of thermoplastic polymers in mass production, insertion of metal parts and other materials with ultrasonics"
  • DVS 2216-3-1992 "Ultrasonic joining of moulded parts and semi-finished parts of thermoplastic polymers in mass production, forming with ultrasound, staking, swaging and tamping"
  • DVS 2216-2-1991
  • DVS 2216-3-1991
  • DVS 2216-4-1991
  • DVS 2216-6-2001
  • DVS 2216-1-1992 Ultrasonic joining of moulded parts and semi-finished parts of thermoplastic polymers in mass production - Machines and equipment - Function description and requirements
  • DVS 2216-1-1991

IEC - International Electrotechnical Commission, half wave condition half wave plate

  • IEC 60747-16-4:2017 Semiconductor devices – Part 16-4: Microwave integrated circuits – Switches (Edition 1.2; Consolidated Reprint)
  • IEC 60747-16-3:2017 Semiconductor devices – Part 16-3: Microwave integrated circuits – Frequency converters (Edition 1.2; Consolidated Reprint)
  • PAS 61338-1-5-2010 Waveguide type dielectric resonators – Part 1-5: General information and test conditions – Measurement method of conductivity at interface between conductor layer and dielectric substrate at microwave frequency (Edition 1.0)

IECQ - IEC: Quality Assessment System for Electronic Components, half wave condition half wave plate

  • QC 750115-2000 Semiconductor Devices - Discrete Devices - Part 4-1: Microwave Diodes and Transistors - Microwave Field Effect Transistors - Blank Detail Specification (IEC 60747-4-1:2000)

CEN - European Committee for Standardization, half wave condition half wave plate

  • EN ISO 20601:2018 Non-destructive testing of welds - Ultrasonic testing - Use of automated phased array technology for thin-walled steel components

PL-PKN, half wave condition half wave plate

International Organization for Standardization (ISO), half wave condition half wave plate

  • ISO 20601:2018 Non-destructive testing of welds — Ultrasonic testing — Use of automated phased array technology for thin-walled steel components

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