ZH
RU
ES
Semiconductor Wafer Thickness
Semiconductor Wafer Thickness, Total:38 items.
In the international standard classification, Semiconductor Wafer Thickness involves: Semiconducting materials, Rectifiers. Convertors. Stabilized power supply, Vocabularies, Semiconductor devices, Electromechanical components for electronic and telecommunications equipment, Electronic components in general.
German Institute for Standardization, Semiconductor Wafer Thickness
- DIN 50441-4:1999 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 4: Slice diameter, diamter variation, flat diameter, flat length, flat depth
- DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
- DIN 50442-1:1981 Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slices
- DIN 50441-5:2001 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 5: Terms of shape and flatness deviation
- DIN EN 62047-9:2012-03 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011
- DIN EN 60749-19:2011-01 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength (IEC 60749-19:2003 + A1:2010); German version EN 60749-19:2003 + A1:2010 / Note: DIN EN 60749-19 (2003-10) remains valid alongside this standard until 2013-09-01.
- DIN 50437:1979 Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
- DIN 50455-1:2009-10 Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods
- DIN 50455-1:2009 Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods
Professional Standard - Machinery, Semiconductor Wafer Thickness
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, Semiconductor Wafer Thickness
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semiconductor Wafer Thickness
- GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
- GB/T 42706.5-2023 Long-term storage of electronic components and semiconductor devices - Part 5: Chips and wafers
British Standards Institution (BSI), Semiconductor Wafer Thickness
- BS EN 62047-9:2011 Semiconductor devices. Micro-electromechanical devices. Wafer to wafer bonding strength measurement for MEMS
- BS EN 62047-9:2013 Semiconductor devices. Micro-electromechanical devices. Wafer to wafer bonding strength measurement for MEMS
American Society for Testing and Materials (ASTM), Semiconductor Wafer Thickness
- ASTM F1894-98 Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness
- ASTM F1894-98(2003) Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness
- ASTM F1894-98(2011) Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness
PH-BPS, Semiconductor Wafer Thickness
- PNS IEC 62435-5:2021 Electronic components - Long-term storage of electronic semiconductor devices - Part 5: Die and wafer devices
Association Francaise de Normalisation, Semiconductor Wafer Thickness
- NF C96-435-5*NF EN 62435-5:2017 Electronic components - Long-term storage of electronic semiconductor devices - Part 5 - die and wafer devices
- NF EN 62435-5:2017 Composants électroniques - Stockage de longue durée des dispositifs électroniques à semiconducteurs - Partie 5 - dispositifs de puces et plaquettes
- NF C96-050-9*NF EN 62047-9:2012 Semiconductor devices - Micro-electromechanical devices - Part 9 : wafer to wafer bonding strength measurement for MEMS.
ES-UNE, Semiconductor Wafer Thickness
- UNE-EN 62435-5:2017 Electronic components - Long-term storage of electronic semiconductor devices - Part 5: Die and wafer devices (Endorsed by Asociación Española de Normalización in May of 2017.)
- UNE-EN 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (Endorsed by AENOR in June of 2012.)
未注明发布机构, Semiconductor Wafer Thickness
- BS EN 62047-9:2011(2012) Semiconductor devices — Micro - electromechanical devices Part 9 : Wafer to wafer bonding strength measurement for MEMS
国家市场监督管理总局、中国国家标准化管理委员会, Semiconductor Wafer Thickness
- GB/T 4937.19-2018 Semiconductor devices—Mechanical and climatic test methods—Part 19: Die shear strength
AENOR, Semiconductor Wafer Thickness
Danish Standards Foundation, Semiconductor Wafer Thickness
- DS/EN 60749-19/A1:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
- DS/EN 60749-19:2003 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
- DS/EN 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
International Electrotechnical Commission (IEC), Semiconductor Wafer Thickness
- IEC 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
- IEC 62047-9:2011/COR1:2012 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
European Committee for Electrotechnical Standardization（CENELEC）, Semiconductor Wafer Thickness
- EN 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
Lithuanian Standards Office , Semiconductor Wafer Thickness
- LST EN 62047-9-2011 Semiconductor devices - Micro-electromechanical devices -- Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011)
- LST EN 60749-19+AC-2003 Semiconductor devices - Mechanical and climatic test methods -- Part 19: Die shear strength (IEC 60749-19:2002)