ZH
RU
ES
Silicon Nitride Windows
Silicon Nitride Windows, Total:338 items.
In the international standard classification, Silicon Nitride Windows involves: Ferroalloys, Refractories, Powder metallurgy, Plastics, Semiconducting materials, Cutting tools, Kitchen equipment, Shop fittings, Ceramics, Analytical chemistry, Optics and optical measurements, Bearings, Insulating materials, Electromechanical components for electronic and telecommunications equipment, Testing of metals, Products of non-ferrous metals, Hand-held tools, Seals, glands, Road vehicle systems, Products of the chemical industry, Document imaging applications, Resistors, Rectifiers. Convertors. Stabilized power supply, Solar energy engineering, Semiconductor devices, Electrical accessories, Insulating fluids, Particle size analysis. Sieving, Integrated circuits. Microelectronics, Non-ferrous metals, Raw materials for rubber and plastics, Inorganic chemicals, Valves, Audio, video and audiovisual engineering, Building accessories, Elements of buildings, Printed circuits and boards, Electricity. Magnetism. Electrical and magnetic measurements, Non-metalliferous minerals.
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Silicon Nitride Windows
- GB/T 30061-2013 Ferromanganese-silicon nitride
- GB/T 31703-2015 Ceramic ball bearings.Silicon nitride balls
- GB/T 30854-2014 Gallium nitride based epitaxial layer for LED lighting
- GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
- GB/T 30656-2023 Silicon carbide single crystal polished wafer
- GB/T 16555-2008 Chemical analysis of refractories containing carbon and silicon carbide or nitride
- GB/T 21951-2008 Cubic boron nitride inserts,tipped or solid.Dimensions
- GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
- GB/T 5687.2-2007 Ferrochromium,silicochromium and nitrogen-bearing Ferrochromium-Determination of silicon content-The perchloric acid dehydration gravimetric method
- GB/T 30655-2014 Test methods for internal quantum efficiency of nitride LED epitaxial layers
- GB/T 30653-2014 Test method for crystal quality of Ⅲ-nitride epitaxial layers
- GB/T 30654-2014 Test method for lattice constant of Ⅲ-nitride epitaxial layers
- GB/T 21951-2023 Inlaid or solid cubic boron nitride insert styles and sizes
- GB/T 32278-2015 Test method for flatness of silicon carbide single wafer
- GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices
- GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
- GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
- GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
- GB/T 41751-2022 Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers
- GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
- GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers.Chemically etching
- GB/T 36705-2018 Test method for carrier concentration of gallium nitride substrates—Raman spectrum method
- GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers
- GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers
- GB/T 16555.5-1996 Chemical analysis for silicon carbide refractories--Determination of ferric oxide--o-Phenanthroline photometric method
- GB/T 42276-2022 Determination of fluorine ion and chloride ion in silicon nitride powder—Ion chromatography method
- GB/T 14849.1-1993 Silicon metal.Determination of iron content.1,10-Phenanthroline spectrophotometric method
- GB/T 6901.4-1986 Silica refractories--Determination of iron oxide content-0-phenanthroline photometric method
- GB/T 5686.2-2008 Ferromanganese, ferromanganese-silicon, nitrogen-bearing ferromanganese and manganese metal. Determination of silicon content. Molybdenum blue photometric method, silicon potassium fluoride titrimetric method and perchloric acid dehydration gravimetric me
- GB/T 25188-2010 Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy
- GB/T 5686.2-2022 Ferromanganese, ferromanganese-silicon, nitrogen-bearing ferromanganese and manganese metal—Determination of silicon content—Molybdenum blue spectrophotometric method, silicon potassium fluoride titri
- GB/T 8654.1-2007 Manganese metal,ferromanganese-silicon,ferromanganese and nitrogen-bearing ferromanganese Determination of iron content The ortho-phenanthrdine spectrophotometric method and the titanium trichloride-potassium dichromate titrimetric method
- GB/T 31351-2014 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
- GB/T 42902-2023 Laser Scattering Method for Testing Surface Defects of Silicon Carbide Epitaxial Wafers
- GB/T 6901.4-2004 Chemical analysis of silica refractories-Part 4:Determination of iron oxide-o-phenanthroline photometric method
- GB/T 41605-2022 Silicon nitride materials for rolling bearing balls—Test method for fracture resistance at room temperature—Indentation fracture (IF) method
- GB/T 32188-2015 Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
- GB/T 30869-2014 Test method for thickness and total thickness variation of silicon wafers for solar cell
- GB/T 14849.1-2007 Methods for chemical analysis of silicon metal-Part 1:Determination of iron content-1,10-Phenanthrolion spectrophotometric method
- GB/T 14506.26-1993 Silicate rocks. Determination of cobalt content. 4-[(5-Chtoro-2-pyridyl)-azo]-1,3-diamino benzene photometric method
Professional Standard - Ferrous Metallurgy, Silicon Nitride Windows
- YB/T 4239-2010 Ferrosilicon Nitride
- YB/T 4035-2007 Silicon nitride bonded silicon carbide bricks
- YB 4035-1991 Silicon nitride bonded silicon carbide bricks for blast furnace
- YB/T 4035-1991 Silicon nitride bonded silicon carbide bricks for blast furnace
- YB/T 174.1-2000 Chemical analysis for silicon nitride bonded silicon carbide product.Determination of silicon nitride content.High pressure dissolve specimen method
- YB/T 174.4-2000 Chemical analysis for silicon nitride bonded silicon carbide product.Determination of iron oxide content.o-Phenanthroline photometric method
- YB/T 174.2-2000 Chemical analysis for silicon nitride bonded silicon carbide product.Determination of silicon carbide content.High pressure dissolve specimen method
- YB/T 174.3-2000 Chemical analysis for silicon nitride bonded silicon carbide product.Determination of free silicon content.Molybdenum blue photometric method
- YB/T 6088-2023 Determination of ferrosilicon nitride calcium, aluminum, chromium, manganese, titanium, phosphorus content by inductively coupled plasma atomic emission spectrometry
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Silicon Nitride Windows
Jilin Provincial Standard of the People's Republic of China, Silicon Nitride Windows
Group Standards of the People's Republic of China, Silicon Nitride Windows
- T/CNIA 0142-2022 Silicon nitride granulated powder
- T/HBZXL 008-2022 Infrared metallized window
- T/CASME 694-2023 Cutting equipment for the production of silicon nitride ceramic tubes
- T/CAAMTB 45-2021 Motor vehicles-windscreen silica gel wiper blade requirement and test methods
- T/ZPP 016-2022 Photovoltaic silicon wafer debonding and inserting integrated technical requirements
- T/IAWBS 005-2018 6 inch polished monocrystalline silicon carbide wafers
- T/CNIA 0102-2021 Green design product evaluation technical specification for silicon nitride powder
- T/IAWBS 002-2017 Test method for surface defect of silicon carbide epitaxial wafer
- T/CASAS 003-2018 4H-SiC Epitaxial Wafers for p-IGBT Devices
- T/CASAS 025-2023 8-inch silicon carbide wafer reference marking and dimensions
- T/IAWBS 014-2021 Test method for dislocation density of silicon carbide polished wafers
- T/IAWBS 013-2019 The measurement method of resistivity for semi-insulating silicon carbide substrate
- T/CNIA 0101-2021 Technical specification for green design product evaluation silicon carbide single crystal polished wafer
- T/CNIA 0016-2019 Determination of Hydrogen Chloride, Nitrogen, Oxygen and Total Carbon Content in Recycled Hydrogen for Polysilicon by Gas Chromatography
- T/IAWBS 011-2019 Test methods for measuring resistivity of conductive silicon carbide wafers with a noncontact eddy-current gauge
- T/IAWBS 016-2022 X-ray double crystal rocking curve FWHM test method for silicon carbide single wafer
Professional Standard - Machinery, Silicon Nitride Windows
- JB/T 10152-2000 Special products of silicon carbide.Slab of silicon nitride bonded silicon carbide
- JB/T 10152-2010 Special products of silicon carbide-Silicon nitride bonded silicon carbide-Plate
- JB/T 10891-2008 Special products of silicon carbide.Silicon nitride bonded silicon carbide.Beam
- JB/T 10645-2006 Special products of silicon carbide Silicon nitride bonded silicon carbide Nozzle tubes
- JB/T 8580-1997 Specifications for silicon nitride glow plugs for diesel engines
- JB/T 8724-1998 Reactively sintered silicon nitride seal ring for mechanical seal
- JB/T 8724-2011 Reactively sintered silicon nitride seal ring for mechanical seal
- JB/T 8736-1998 Aluminum nitride ceramics substrate intended to be used in power semiconductor modules
- JB/T 10320-2002 Household and similar silicon nitride ceramic heating elements used for electric heating appliances
- JB/T 53390-1999 Product quality classification of reaction sintered silicon nitride sealing rings for mechanical seals
- JB/T 10041-1999 Carbide-backed polycrystalline diamond or polycrystalline cubic boron nitride blanks species,dimensions
- JB/T 10041-2018 Carbide-backed polycrystalline diamond or polycrystalline cubic boron nitride blanks species,dimensions
- JB/T 10041-2008 Polycrystalline diamond compact or polycrystalline cubic boron nitride blanks species, dimensions
Guizhou Provincial Standard of the People's Republic of China, Silicon Nitride Windows
Professional Standard - Building Materials, Silicon Nitride Windows
- JC/T 2134-2012 Silicon nitride ceramic powder
- JC/T 2349-2015 Si<下标3>N<下标4> ceramic insulation components for polycrystalline silicon production
- JC/T 2342-2015 Method for the quantitative phase analysis of silicon nitride
国家市场监督管理总局、中国国家标准化管理委员会, Silicon Nitride Windows
- GB/T 37258-2018 Silicon nitride ceramic powder
- GB/T 39975-2021 Aluminum nitride ceramic dissipate heat substrates
- GB/T 37053-2018 General specification for epitaxial wafers and substrates based on gallium nitride
- GB/T 41490-2022 Silicon nitride ceramics—Test method for rolling contact fatigue at room temperature—Balls-on-flat method
- GB/T 41153-2021 Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal—Secondary ion mass spectrometry
Military Standard of the People's Republic of China-General Armament Department, Silicon Nitride Windows
- GJB 502-1988 Monolithic silicate glass for aircraft windows
- GJB 5332-2004 Silicon nitride bearing ball specifications
- GJB 502B-2020 Specification for monolithic silicate glass for aircraft windows
- GJB 502A-1998 Specification for monolithic silicate glass for aircraft windows
- GJB 10063-2021 Silicon nitride ceramic polishing mask specification
- GJB 10064-2021 Specification for silicon nitride ceramic rain erosion heads
- GJB 3520-1999 Specification for aluminum nitride ceramic substrates
- GJB 8131-2013 Specification for AlN-SiC used as microwave attenuation composites
- GJB 4158-2001 Specification for beryllium oxide ceramic output windows for microwave tubes
工业和信息化部, Silicon Nitride Windows
- JB/T 10645-2020 Silicon carbide special products silicon nitride combined with silicon carbide burner cover
- YB/T 4582.7-2017 Determination of total nitrogen content of ferrous silicon nitride by neutralization titration method
- YB/T 4582.8-2017 Determination of silicon content in ferrosilicon nitride perchloric acid dehydration gravimetric method
- YB/T 4582.1-2017 Determination of calcium iron silicon nitride content EDTA titration method
- YB/T 4582.5-2017 Determination of ferrosilicon aluminum nitride content EDTA titration method
- YB/T 4582.10-2017 Determination of carbon content in silicon ferronitride by infrared absorption method
- YB/T 4582.4-2017 Determination of sulfur content in silicon iron nitride by infrared absorption method
- YB/T 4566.5-2016 Determination of vanadium ferrosilicon content by sulfuric acid dehydration gravimetric method
- YB/T 4582.6-2017 Determination of silicon ferromanganese nitride content sodium periodate spectrophotometry
- YB/T 4582.3-2017 Determination of phosphorus content in silicon iron nitride bismuth phosphorus molybdenum blue spectrophotometry
- YB/T 4582.2-2017 Determination of ferrochromium content in silicon nitride diphenylcarbazide spectrophotometric method
- YB/T 4582.9-2017 Determination of titanium silicon nitride content diantipyrine methane spectrophotometry
- YB/T 4566.4-2016 Determination of silicon, manganese, phosphorus and aluminum content in ferrovanadium nitride by inductively coupled plasma atomic emission spectrometry
Taiwan Provincial Standard of the People's Republic of China, Silicon Nitride Windows
- CNS 12786-1990 Method of Chemical Analysis for Silicon Nitride Powders
Japanese Industrial Standards Committee (JISC), Silicon Nitride Windows
- JIS B 1563:2009 Rolling bearings -- Silicon nitride balls
- JIS R 1640:2002 Methods for the quantitative phase analysis of silicon nitride
- JIS R 1603:1994 Methods for chemical analysis of fine silicon nitride powders for fine ceramics
- JIS R 1603:2007 Methods for chemical analysis of fine silicon nitride powders for fine ceramics
- JIS H 0611:1994 Methods of measurement of thickness, thickness variation and bow for silicon wafer
- JIS R 1669:2006 Fine ceramics -- Fundamental characteristics and classification of silicon nitride materials for rolling bearing balls
- JIS R 1669:2014 Fine ceramics -- Fundamental characteristics and classification of silicon nitride materials for rolling bearing balls
- JIS C 6524:1995 Prepreg for multilayer printed wiring boards -- Bismaleimide/Triazine/Epoxide resin-impregnated glass cloth
International Organization for Standardization (ISO), Silicon Nitride Windows
- ISO/DIS 21068-4 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon — Part 4: XRD methods
- ISO/DIS 21068-3 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon — Part 3: Determination of nitrogen, oxygen and metallic and oxidic constituents
- ISO/DIS 21068-2 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon — Part 2: Determination of volatile components, total carbon, free carbon, silicon carbide, total and free silicon, free
- ISO/DIS 21068-1 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon — Part 1: General information and sample preparation
- ISO 6343:1981 Micrographics; Unitized microfilm carrier (aperture card); Determination of adhesion of protection sheet to aperture adhesive
- ISO 16462:2004 Cubic boron nitride inserts, tipped or solid - Dimensions, types
- ISO 16462:2014 Cubic boron nitride inserts, tipped or solid - Dimensions, types
- ISO 17947:2014 Fine ceramics (advanced ceramics, advanced technical ceramics) - Methods for chemical analysis of fine silicon nitride powders
- ISO 26602:2009 Fine ceramics (advanced ceramics, advanced technical ceramics) - Silicon nitride materials for rolling bearing balls
- ISO 21068-3:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 3: Determination of nitrogen, oxygen and metallic and oxidic constituents
- ISO 3272-5:1999 Microfilming of technical drawings and other drawing office documents - Part 5: Test procedures for diazo duplicating of microfilm images in aperture cards
- ISO 26602:2017 Fine ceramics (advanced ceramics, advanced technical ceramics) - Silicon nitride materials for rolling bearing balls and rollers
American Society for Testing and Materials (ASTM), Silicon Nitride Windows
- ASTM F2094-03a Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094-03 Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094-01 Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094-01a Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094/F2094M-11 Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094/F2094M-18 Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094/F2094M-18a Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094/F2094M-14e1 Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094-06e1 Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094-06 Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094/F2094M-08 Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094/F2094M-13 Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2094/F2094M-14 Standard Specification for Silicon Nitride Bearing Balls
- ASTM F2730/F2730M-08 Standard Specification for Silicon Nitride Cylindrical Bearing Rollers
- ASTM F2730/F2730M-18 Standard Specification for Silicon Nitride Cylindrical Bearing Rollers
- ASTM F2730/F2730M-11 Standard Specification for Silicon Nitride Cylindrical Bearing Rollers
- ASTM F2730/F2730M-18a Standard Specification for Silicon Nitride Cylindrical Bearing Rollers
- ASTM F2730/F2730M-13 Standard Specification for Silicon Nitride Cylindrical Bearing Rollers
- ASTM F2730/F2730M-14 Standard Specification for Silicon Nitride Cylindrical Bearing Rollers
- ASTM C1494-01 Standard Test Methods for Determination of Mass Fraction of Carbon, Nitrogen, and Oxygen in Silicon Nitride Powder
- ASTM C1494-13(2018) Standard Test Methods for Determination of Mass Fraction of Carbon, Nitrogen, and Oxygen in Silicon Nitride Powder
- ASTM D5604-96(2006) Standard Test Methods for Precipitated Silica-Surface Area by Single Point B.E.T. Nitrogen Adsorption
- ASTM D5604-96(2001) Standard Test Methods for Precipitated Silica8212;Surface Area by Single Point B.E.T. Nitrogen Adsorption
- ASTM D5604-96 Standard Test Methods for Precipitated Silica8212;Surface Area by Single Point B.E.T. Nitrogen Adsorption
- ASTM D5604-96(2017) Standard Test Methods for Precipitated Silica8212;Surface Area by Single Point B.E.T. Nitrogen Adsorption
- ASTM F533-96 Standard Test Method for Thickness and Thickness Variation of Silicon Wafers
- ASTM F533-02 Standard Test Method for Thickness and Thickness Variation of Silicon Wafers
- ASTM C1494-01(2007) Standard Test Methods for Determination of Mass Fraction of Carbon, Nitrogen, and Oxygen in Silicon Nitride Powder
- ASTM C1494-13 Standard Test Methods for Determination of Mass Fraction of Carbon, Nitrogen, and Oxygen in Silicon Nitride Powder
- ASTM F951-01 Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
- ASTM F81-00 Standard Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
- ASTM F1727-97 Standard Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers
- ASTM D1993-91(1997) Standard Test Method for Precipitated Silica-Surface Area by Multipoint BET Nitrogen Adsorption
- ASTM D1993-18 Standard Test Method for Precipitated Silica-Surface Area by Multipoint BET Nitrogen Adsorption
- ASTM D5604-21 Standard Test Methods for Precipitated Silica—Surface Area by Single Point B.E.T. Nitrogen Adsorption
- ASTM D1993-22 Standard Test Method for Precipitated Silica-Surface Area by Multipoint BET Nitrogen Adsorption
- ASTM F951-96 Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
- ASTM D1993-03(2008) Standard Test Method for Precipitated Silica-Surface Area by Multipoint BET Nitrogen Adsorption
- ASTM D5604-96(2012) Standard Test Methods for Precipitated Silicamdash;Surface Area by Single Point B.E.T. Nitrogen Adsorption
- ASTM D1993-03 Standard Test Method for Precipitated Silica-Surface Area by Multipoint BET Nitrogen Adsorption
- ASTM D1993-03(2013) Standard Test Method for Precipitated Silica-Surface Area by Multipoint BET Nitrogen Adsorption
British Standards Institution (BSI), Silicon Nitride Windows
- 18/30386543 DC BS EN 63229 Ed.1.0. Semiconductor devices. The classification of defects in gallium nitride epitaxial wafers on silicon carbide substrate
- 23/30446960 DC BS EN ISO 21068-3. Chemical analysis of raw materials and refractory products containing silicon carbide, silicon nitride, silicon oxynitride and sialon - Part 3. Determination of nitrogen, oxygen and metallic and oxidic constituents
- 23/30446996 DC BS EN ISO 21068-4. Chemical analysis of raw materials and refractory products containing silicon carbide, silicon nitride, silicon oxynitride and sialon - Part 4. XRD methods
- 23/30446956 DC BS EN ISO 21068-2. Chemical analysis of raw materials and refractory products containing silicon carbide, silicon nitride, silicon oxynitride and sialon - Part 2. Determination of volatile components, total carbon, free carbon, silicon carbide,…
- 23/30446952 DC BS EN ISO 21068-1. Chemical analysis of raw materials and refractory products containing silicon carbide, silicon nitride, silicon oxynitride and sialon - Part 1. General information and sample preparation
- BS EN 12698-1:2007 Chemical analysis of nitride bonded silicon carbide refractories - Chemical methods
- BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
- BS EN 12698-2:2007 Chemical analysis of nitride bonded silicon carbide refractories - XRD methods
- BS EN ISO 17947:2023 Fine ceramics (advanced ceramics, advanced technical ceramics). Methods for chemical analysis of fine silicon nitride powders
- 19/30404655 DC BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate
- BS ISO 17947:2014 Fine ceramics (advanced ceramics, advanced technical ceramics). Methods for chemical analysis of fine silicon nitride powders
- BS ISO 16462:2004 Cubic boron nitride inserts, tipped or solid - Dimensions, types
- BS ISO 16462:2014 Cubic boron nitride inserts, tipped or solid. Dimensions, types
- BS EN ISO 21068-3:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products -Part 3: Determination of nitrogen, oxygen and metallic and oxidic constituents
- BS ISO 26602:2009 Fine ceramics (advanced ceramics, advanced technical ceramics) - Silicon nitride materials for rolling bearing balls
- BS ISO 26602:2017 Fine ceramics (advanced ceramics, advanced technical ceramics). Silicon nitride materials for rolling bearing balls and rollers
German Institute for Standardization, Silicon Nitride Windows
- DIN EN ISO 21068-2:2023-07 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 2: Determination of volatile components, total carbon, free carbon, silicon carbide, total and free silicon, fr...
- DIN EN ISO 21068-4:2023-07 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 4: XRD methods (ISO/DIS 21068-4:2023); German and English version prEN ISO 21068-4:2023 / Note: Date of issue 2...
- DIN EN ISO 21068-3:2023-07 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 3: Determination of nitrogen, oxygen and metallic and oxidic constituents (ISO/DIS 21068-3:2023); German and En...
- DIN EN ISO 21068-1:2023-07 Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 1: General information and sample preparation (ISO/DIS 21068-1:2023); German and English version prEN ISO 21068...
- DIN EN 12698-1:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods English version of DIN EN 12698-1:2007-06
- DIN V VDE V 0126-18-2-2:2007 Solar wafers - Part 2-2: Measuring the geometric dimensions of silicon wafers - Variations in thickness
- DIN EN 12698-1:2007-06 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods; German version EN 12698-1:2007
- DIN EN 12698-2:2007-06 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods; German version EN 12698-2:2007
- DIN ISO 16462:2015-08 Cubic boron nitride inserts, tipped or solid - Dimensions, types (ISO 16462:2014)
- DIN ISO 16462:2005 Cubic boron nitride inserts, tipped or solid - Dimensions, types (ISO 16462:2004);English version of DIN ISO 16462:2005
- DIN EN 12698-2:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods English version of DIN EN 12698-2:2007-06
- DIN ISO 16462:2015 Cubic boron nitride inserts, tipped or solid - Dimensions, types (ISO 16462:2014)
- DIN EN ISO 17947:2023-06 Fine ceramics (advanced ceramics, advanced technical ceramics) - Methods for chemical analysis of fine silicon nitride powders (ISO 17947:2014); German version EN ISO 17947:2023
- DIN EN ISO 21068-3:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 3: Determination of nitrogen, oxygen and metallic and oxidic constituents (ISO 21068-3:2008); English version of DIN EN ISO 21068-3:2008-12
- DIN EN 12365-4:2003-12 Building hardware - Gaskets and weatherstripping for doors, windows, shutters and curtain walling - Part 4: Recovery after accelerated ageing test method; German version EN 12365-4:2003
- DIN 50435:1988 Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method
CEN - European Committee for Standardization, Silicon Nitride Windows
- PREN 12698-2005 Chemical analysis of nitride bonded silicon carbide refractories
Korean Agency for Technology and Standards (KATS), Silicon Nitride Windows
- KS L 1613-2011 Methods for chemical analysis of fine silicon nitride powers for fine ceramics
- KS L 3318-1998 METHODS FOR CHEMICAL ANALYSIS OF FINE SILICON NITRIDE POWDERS FOR FINE CERAMICS
- KS L 3318-1988 METHODS FOR CHEMICAL ANALYSIS OF FINE SILICON NITRIDE POWDERS FOR FINE CERAMICS
- KS B 3191-2013 DIAMOND OR CUBIC BORON NITRIDE SEGMENTED SAWS
- KS L 1613-1994 Methods for chemeical analysis of fine silicon nitride powers for fine ceramics
- KS L 1613-2011(2016) Methods for chemical analysis of fine silicon nitride powers for fine ceramics
- KS L 1613-2011(2021) Methods for chemical analysis of fine silicon nitride powers for fine ceramics
- KS D 0259-2012(2022) Methods of measurement of thickness,thickness variation and bow for silicon wafer
- KS D 0259-2012 Methods of measurement of thickness,thickness variation and bow for silicon wafer
- KS L ISO 26602:2011 Fine ceramics(advanced ceramics, advanced technical ceramics)-Silicon nitride materials for rolling bearing balls
- KS L ISO 26602-2011(2021) Fine ceramics(advanced ceramics, advanced technical ceramics)-Silicon nitride materials for rolling bearing balls
- KS L ISO 26602-2011(2016) Fine ceramics(advanced ceramics, advanced technical ceramics)-Silicon nitride materials for rolling bearing balls
- KS L ISO 21068-3-2012(2022) Chemical analysis of silicon-carbide-containing raw materials and refractory products-Part 3:Determination of nitrogen, oxygen and metallic and oxidic constituents
- KS L ISO 21068-3-2012(2017) Chemical analysis of silicon-carbide-containing raw materials and refractory products-Part 3:Determination of nitrogen, oxygen and metallic and oxidic constituents
- KS L ISO 21068-3:2012 Chemical analysis of silicon-carbide-containing raw materials and refractory products-Part 3:Determination of nitrogen, oxygen and metallic and oxidic constituents
Association Francaise de Normalisation, Silicon Nitride Windows
- NF EN ISO 17947:2023 Céramiques techniques - Méthodes pour l'analyse chimique de poudres fines de nitrure de silicium
- NF B49-422-1*NF EN 12698-1:2008 Chemical analysis of nitride bonded silicon carbide refractories - Part 1 : chemical methods.
- NF EN 12698-1:2008 Analyse chimique des produits réfractaires contenant du carbure de silicium lié au nitrure - Partie 1 : méthodes chimiques
- NF E66-317:2004 Cubic boron nitride inserts, tipped or solid - Dimensions, types.
- NF E66-317*NF ISO 16462:2014 Cubic boron nitride inserts, tipped or solid - Dimensions, types
- NF EN 12698-2:2008 Analyse chimique des produits réfractaires contenant du carbure de silicium lié au nitrure - Partie 2 : méthodes de DRX
- NF B49-422-2*NF EN 12698-2:2008 Chemical analysis of nitride bonded silicon carbide refractories - Part 2 : XRD methods.
- NF B49-423-3*NF EN ISO 21068-3:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 3 : determination of nitrogen, oxygen and metallic and oxidic constituents.
- NF EN ISO 21068-3:2008 Analyse chimique des matières premières et des produits réfractaires contenant du carbure de silicium - Partie 3 : dosage de l'azote, de l'oxygène et des constituants métalliques et oxydés
Defense Logistics Agency, Silicon Nitride Windows
- DLA MIL-PRF-47009 D-2006 COMPOUND, SILICONE, HEAT SINK
- DLA DSCC-DWG-88008 REV B-2007 RESISTOR, CHIP, FIXED, FILM, TANTALUM NITRIDE, STYLE 0505
- DLA DSCC-DWG-88009 REV E-2007 RESISTOR, CHIP, FIXED, FILM, TANTALUM NITRIDE, STYLE 1050
- DLA SMD-5962-87791 REV B-1989 MICROCIRCUITS, DIGITAL, BIPOLAR, FIRST-IN FIRST-OUT (FIFO), MONOLITHIC SILICON
- DLA SMD-5962-87755 REV B-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, BUFFERED REGISTERS, MONOLITHIC SILICON
- DLA SMD-5962-88515-1988 MICROCIRCUITS, DIGITAL, BIPOLAR, PROGRAMMABLE LOGIC, MONOLITHIC SILICON
- DLA SMD-5962-88604 REV B-2007 MICROCIRCUIT, DIGITAL, BIPOLAR, BIDIRECTIONAL TRANSCEIVERS, MONOLITHIC SILICON
- DLA SMD-5962-97543 REV C-2003 MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-77044 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, NOR GATES, MONOLITHIC SILICON
- DLA SMD-5962-01502 REV B-2007 MICROCIRCUIT, DIGITAL, CMOS, RADIATION HARDENED MICROPROCESSOR, MONOLITHIC SILICON
- DLA SMD-5962-87769 REV A-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, DUAL LINE DRIVERS, MONOLITHIC SILICON
- DLA SMD-5962-87772-1988 MICROCIRCUITS, DIGITAL, BIPOLAR, REGISTERED TRANSCEIVER, MONOLITHIC SILICON
- DLA SMD-5962-00501 REV C-2007 MICROCIRCUIT, LINEAR, RADIATION HARDENED, PRECISION VOLTAGE REFERENCE, MONOLITHIC SILICON
- DLA SMD-5962-01510 REV D-2007 MICROCIRCUIT, LINEAR, RADIATION HARDENED, QUAD VOLTAGE COMPARATOR, MONOLITHIC SILICON
- DLA SMD-5962-88507 REV A-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, FIELD PROGRAMMABLE SEQUENCER (FPLS), MONOLITHIC SILICON
- DLA SMD-5962-77027 REV C-1982 MICROCIRCUITS, DIGITAL, CMOS, HEX INVERTER, MONOLITHIC SILICON
- DLA SMD-5962-77053 REV M-2005 MICROCIRCUIT, CMOS, QUAD ANALOG SWITCH, MONOLITHIC SILICON
- DLA SMD-5962-87739 REV H-2007 MICROCIRCUIT, LINEAR, QUAD, VOLTAGE COMPARATOR, RADIATION HARDENED, MONOLITHIC SILICON
- DLA SMD-5962-88539 REV E-2005 MICROCIRCUIT, LINEAR, RADIATION HARDENED, PRECISION INSTRUMENTATION AMPLIFIER, MONOLITHIC SILICON
- DLA SMD-5962-88696 REV A-1990 MICROCIRCUITS, DIGITAL BIPOLAR DYNAMIC MEMORY CONTROLLER MONOLITHIC SILICON
- DLA SMD-5962-89517 REV A-1994 MICROCIRCUIT, DIGITAL, CMOS, 16-BIT SLICE MICROPROCESSOR, MONOLITHIC SILICON
- DLA SMD-5962-84043 REV E-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, EXCLUSIVE NOR GATE, MONOLITHIC SILICON
- DLA SMD-5962-84069 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, BUS CONTROLLER, MONOLITHIC SILICON
- DLA SMD-5962-77034 REV X-2006 MICROCIRCUIT, LINEAR, ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON
- DLA SMD-5962-77037 REV G-2005 MICROCIRCUIT, DIGITAL, CMOS, 4-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON
- DLA SMD-5962-88550 REV C-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, EDGE-TRIGGERED, D-TYPE FLIP-FLOP, MONOLITHIC SILICON
- DLA SMD-5962-93007 REV D-1996 MICROCIRCUIT, DIGITAL, CMOS, TWO DIMENSIONAL CONVOLVER MONOLITHIC SILICON
- DLA SMD-5962-77023 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL BINARY UP-COUNTER, MONOLITHIC SILICON
- DLA SMD-5962-81019 REV B-1984 MICROCIRCUITS, DIGITAL, CMOS, QUAD D LATCH, MONOLITHIC SILICON
- DLA SMD-5962-78029 REV H-2005 MICROCIRCUIT, DIGITAL, CMOS, ENCODER- DECODER, MONOLITHIC SILICON
- DLA SMD-5962-00520 REV D-2007 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, 8-CHANNEL SOURCE DRIVER, MONOLITHIC SILICON
- DLA SMD-5962-00523 REV F-2006 MICROCIRCUIT, LINEAR, RADIATION HARDENED, 2.5 V SHUNT DIODE REGULATOR, MONOLITHIC SILICON
- DLA SMD-5962-02523 REV A-2007 MICROCIRCUIT, DIGITAL, CMOS, RADIATION HARDENED, MCS-96 BASED MICROCONTROLLER, MONOLITHIC SILICON
- DLA SMD-5962-94533-1994 MICROCIRCUIT, DIGITAL, CMOS, 32-BIT MICROPROCESSOR, MONOLITHIC SILICON
- DLA SMD-5962-88504 REV D-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, FIELD PROGRAMMABLE, LOGIC ARRAY (FPLA), MONOLITHIC SILICON
- DLA SMD-5962-88565 REV F-2003 MICROCIRCUIT, LINEAR, RADIATION HARDENED, LOW NOISE, QUAD OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
- DLA SMD-5962-93168 REV A-1995 MICROCIRCUIT, MEMORY, DIGITAL, CMOS ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
- DLA SMD-5962-06208-2006 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
- DLA SMD-5962-84052 REV D-1990 MICROCIRCUITS, DIGITAL, CMOS, 16 BIT MICROPROCESSOR, MONOLITHIC SILICON
- DLA SMD-5962-84068 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, CLOCK GENERATOR DRIVER, MONOLITHIC SILICON
- DLA SMD-5962-77024 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, QUAD 2-INPUT AND GATE, MONOLITHIC SILICON
- DLA SMD-5962-77036 REV D-2005 MICROCIRCUIT, DIGITAL, CMOS, QUAD 2-INPUT AND GATE, MONOLITHIC SILICON
- DLA SMD-5962-77051 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
- DLA SMD-5962-77059 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT AND GATE, MONOLITHIC SILICON
- DLA SMD-5962-77060 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
- DLA SMD-5962-79012 REV A-1986 MICROCIRCUITS, DIGITAL, CMOS, STATIC SHIFT REGISTER, MONOLITHIC SILICON
- DLA SMD-5962-79013 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
- DLA SMD-5962-79014 REV B-1987 MICROCIRCUIT, DIGITAL, CMOS, HEX INVERTER BUFFER, MONOLITHIC SILICON
- DLA SMD-5962-00524 REV D-2005 MICROCIRCUIT, LINEAR, RADIATION HARDENED, PRECISION VOLTAGE COMPARATOR/BUFFER, MONOLITHIC SILICON
- DLA SMD-5962-01507-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, HIGH-SPEED LOOK-AHEAD CARRY GENERATOR, MONOLITHIC SILICON
- DLA SMD-5962-01516 REV B-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 3.3 V, 8K X 8-BIT PROM, MONOLITHIC SILICON
- DLA SMD-5962-01517 REV C-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 3.3 V, 32K X 8-BIT PROM, MONOLITHIC SILICON
- DLA SMD-5962-01521 REV A-2001 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, 9 AMP NON-INVERTING MOSFET DRIVER, MONOLITHIC SILICON
- DLA SMD-5962-02503 REV A-2005 MICROCIRCUIT, LINEAR, RADIATION HARDENED, NEGATIVE LOW DROPOUT ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON
- DLA SMD-5962-02547-2003 MICROCIRCUIT, LINEAR, RADIATION HARDENED, DUAL, WIDEBAND VIDEO OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
- DLA SMD-5962-89638-1989 MICROCIRCUIT, LINEAR, CMOS CURRENT MODE CONTROLLER, MONOLITHIC SILICON
- DLA SMD-5962-89711 REV B-2006 MICROCIRCUIT, DIGITAL, CMOS 64-BIT OUTPUT CORRELATOR, MONOLITHIC SILICON
- DLA SMD-5962-94642-1994 MICROCIRCUIT, DIGITAL, CMOS, ENHANCED MULTI-FUNCTIONAL PERIPHERAL, MONOLITHIC SILICON
- DLA SMD-5962-89725 REV A-1995 MIRCOCIRCUIT, DIGITAL, CMOS, ASYNCHRONOUS, SERIAL CONTROLLER, MONOLITHIC SILICON
- DLA SMD-5962-89877 REV C-2004 MICROCIRCUIT, LINEAR, CMOS, DUAL, RS232, TRANSCEIVER, MONOLITHIC SILICON
- DLA SMD-5962-88555 REV C-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, D-TYPE REGISTER, MONOLITHIC SILICON
- DLA SMD-5962-89982 REV B-2004 MICROCIRCUIT, DIGITAL, CHMOS, 16-BIT MICROCONTROLLER, MONOLITHIC SILICON
- DLA SMD-5962-90526 REV M-2004 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
- DLA SMD-5962-92331-1993 MICROCIRCUIT, DIGITAL, CMOS, COORDINATE TRANSFORMER, 16X16 BIT, MONOLITHIC SILICON
- DLA SMD-5962-90657 REV A-2006 MICROCIRCUIT, DIGITAL, CMOS, UNIVERSAL SERIAL CONTROLLER, MONOLITHIC SILICON
- DLA SMD-5962-90678 REV A-2005 MICROCIRCUIT, DIGITAL, CMOS, 16-BIT, MICROPROCESSOR, MONOLITHIC SILICON
- DLA SMD-5962-93006 REV B-1999 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
- DLA SMD-5962-88698 REV D-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, SYNCHRONOUS 4-BIT UP/DOWN COUNTER, MONOLITHIC SILICON
- DLA SMD-5962-93183 REV C-2002 MICROCIRCUIT, LINEAR, BUS TRANSCEIVER, DIFFERENTIAL, MONOLITHIC SILICON
- DLA SMD-5962-93228 REV B-2005 MICROCIRCUIT, DIGITAL, CMOS, TEST BUS CONTROLLER, MONOLITHIC SILICON
Professional Standard - Aerospace, Silicon Nitride Windows
- QJ 2339.1-1992 Cubic boron nitride/tungsten carbide welding inserts
- QJ 2339.2-1992 Cubic boron nitride/tungsten carbide indexable inserts
- QJ 2339.4-1992 Cubic boron nitride/tungsten carbide insert technical conditions
Professional Standard - Electron, Silicon Nitride Windows
- SJ/T 11502-2015 Specification for polished monocrystalline silicon carbide wafers
- SJ/T 11396-2009 The sapphire substrates for nitride based light-emitting diode
- SJ/T 11504-2015 Test method for measuring surface quality of polished monocrystalline silicon carbide
- SJ/T 11503-2015 Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers
Hebei Provincial Standard of the People's Republic of China, Silicon Nitride Windows
- DB13/T 5091-2019 Determination of ferromanganese, manganese silicon, ferromanganese nitride and metal manganese silicon, manganese and phosphorus content Wavelength dispersive X-ray fluorescence spectrometry (cast glass method)
- DB13/T 5118-2019 General technical requirements for 4H SiC N-type homoepitaxial wafers
Danish Standards Foundation, Silicon Nitride Windows
- DS/EN 12698-1:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods
- DS/EN 12698-2:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods
- DS/EN ISO 21068-3:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 3: Determination of nitrogen, oxygen and metallic and oxidic constituents
- DS/EN 12365-4:2004 Building hardware - Gasket and weatherstripping for doors, windows, shutters and curtain walling - Part 4: Recovery after accelerated ageing test method
Lithuanian Standards Office , Silicon Nitride Windows
- LST EN 12698-1-2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods
- LST EN 12698-2-2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods
- LST EN 12365-4-2004 Building hardware - Gasket and weatherstripping for doors, windows, shutters and curtain walling - Part 4: Recovery after accelerated ageing test method
AENOR, Silicon Nitride Windows
- UNE-EN 12698-1:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods
- UNE-EN 12698-2:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods
- UNE-EN 12365-4:2004 Building hardware - Gasket and weatherstripping for doors, windows, shutters and curtain walling - Part 4: Recovery after accelerated ageing test method
International Electrotechnical Commission (IEC), Silicon Nitride Windows
- IEC 63229:2021 Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
HU-MSZT, Silicon Nitride Windows
European Committee for Standardization (CEN), Silicon Nitride Windows
- EN 12698-1:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 1: Chemical methods
- EN 12698-2:2007 Chemical analysis of nitride bonded silicon carbide refractories - Part 2: XRD methods
- EN ISO 17947:2023 Fine ceramics (advanced ceramics, advanced technical ceramics) - Methods for chemical analysis of fine silicon nitride powders (ISO 17947:2014)
- EN ISO 21068-3:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 3: Determination of nitrogen, oxygen and metallic and oxidic constituents (ISO 21068-3:2008)
RO-ASRO, Silicon Nitride Windows
- STAS 13100-1992 Honing blades with diamond or cubic boron nitride. Main dimensions
- STAS 10001/3-1985 TOUGTIENED SAFETY GLASS PANES FOR SHIPS' WINDOWS Shape and diensions
CZ-CSN, Silicon Nitride Windows
Professional Standard - Commodity Inspection, Silicon Nitride Windows
- SN/T 0770-1999 Determination of silicon oxide in middle carbon flake graphite.Molybdenum blue photometric method
ES-UNE, Silicon Nitride Windows
- UNE-EN ISO 17947:2023 Fine ceramics (advanced ceramics, advanced technical ceramics) - Methods for chemical analysis of fine silicon nitride powders (ISO 17947:2014) (Endorsed by Asociación Española de Normalización in May of 2023.)
- UNE-EN ISO 21068-3:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 3: Determination of nitrogen, oxygen and metallic and oxidic constituents (ISO 21068-3:2008) (Endorsed by AENOR in October of 2008.)
Professional Standard - Chemical Industry, Silicon Nitride Windows
- HG/T 3073-1999 Rubber compounding ingredients.Silica,precipitated,hydrated.Determination of specific surface area - Nitrogen adsorption method
IN-BIS, Silicon Nitride Windows
Professional Standard - Electricity, Silicon Nitride Windows
- DL/T 2310-2021 Conditions of use of silicon carbide epitaxial wafers for high-voltage power devices in power systems