31.080.10 二极管 标准查询与下载

KS C IEC 60747-2-2-2006(2021) 半导体器件分立器件第2部分:整流二极管第2节:额定环境和外壳电流大于100A的整流二极管（包括雪崩整流二极管）空白详细规范

Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current

KS C IEC 60747-3-1-2006(2021) 半导体器件分立器件第3部分:信号（包括开关）和调节二极管第一节:信号二极管、开关二极管和受控雪崩二极管空白详细规范

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod

KS C IEC 60747-3-1-2006(2016) 半导体器件分立器件第3部分:信号（包括开关）和稳压二极管第一节:信号二极管、开关二极管和受控雪崩二极管空白详细规范

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod

KS C IEC 60747-3-2:2006 半导体器件.分立器件.第3部分:信号二极管(包括开关二极管)和调节二极管.第2节:稳压二极管和基准电压二极管(不包括温度补偿精密基准二极管)的空白详细规范

이 규격은 정전압 다이오드 및 전압 기준 다이오드의 개별 규격 지침에 대하여 규정한다.

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes

KS C IEC 60747-3-2-2006(2021) 半导体器件分立器件第3部分:信号（包括开关）和稳压二极管第2节:调压二极管和基准电压二极管空白详细规范不包括温度补偿精密基准二极管

Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud

KS C IEC 61643-321:2006 低压浪涌保护装置的元件.第321部分:雪崩击穿二极管(ABD)规范

이 규격은 저전압 전력 분배 장치, 송전 및 신호망과 연결된 서지 보호 장치의 설계와 구조

Components for low－voltage surge protective devices－Part 321：Specifications for avalanche breakdown diode(ABD)

KS C IEC 61643-321-2006(2019) 低压浪涌保护器元件第321部分:雪崩击穿二极管规范

Components for low－voltage surge protective devices－Part 321：Specifications for avalanche breakdown diode(ABD)

DLA SMD-5962-00523 REV F-2006 单片硅辐射硬化线性微电路 2.5V并联二极管调节器

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, LINEAR, RADIATION HARDENED, 2.5 V SHUNT DIODE REGULATOR, MONOLITHIC SILICON

KS C IEC 61643-341:2005 低压浪涌保护装置用元件.第341部分:晶闸管浪涌抑制器(TSS)规范

이 규격은 과전압을 제한하고 서지 전류를 클립과 쇠지레 동작을 이용하여 우회시키는 사 이리

Components for low-voltage surge protective devices－Part 341：Specification for thyristor surge suppressors(TSS)

KS C IEC 61643-341-2005(2020) 低压浪涌保护器件组件第341部分:晶闸管浪涌抑制器（tss）规范

Components for low — voltage surge protective devices —Part 341: Specification for thyristor surge suppressors(TSS)

JIS C 5381-341:2005 低压电涌保护装置用元件.第341部分:晶闸管电涌抑制器(TSS)规范

この規格は，クリッピング及びクローべ動作によって過電圧を抑制し，サージ電流を分流するように設計した低圧サージ防護デべイス用サージ防護サイリスタ(以下,TSSという。)の試験方法について規定する。

Components for low-voltage surge protective devices -- Part 341: Specification for thyristor surge suppressors (TSS)

JEDEC JEP133B-2005 辐射多芯片模块和混合微电路的生产指南

The development of radiation-hardened multichip modules and hybrid microcircuits can take place in one of three ways

Guide for the Production and Acquisition of Radiation-Hardness- Assured Multichip Modules and Hybrid Microcircuits

NAVY A-A-59781-2005 发光二极管应用为指示灯

This Commercial Item Description (CID) covers the performance of solid-state light emitting diodes (LEDs) for use as indicator lights. The LEDs will provide indicator illumination in lieu of conventional incandescent indicator lamps. The form, fit and function of the LED will be comparable to the legacy incandescent lamps when being applied in retrofit applications.

LIGHT EMITTING DIODES FOR USE AS INDICATOR LIGHTS

JEDEC JEP84A-2004 晶体管引线温度测量的推荐实践

It is often required to measure the lead temperature of a packaged transistor under various load conditions.

Recommend Practice for Measurement of Transistor Lead Temperature

JEDEC JESD24-12-2004 绝缘双极晶体管的热阻抗测量

The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6.

Thermal Impedance Measurement for Insulated Gate Bipolar Transistors (Delta VCE(on) Method) (This is an alternative method to JEDEC Standard No. 24-6)

SANS 61643-341:2004 低压电涌保护装置组件．第341部分：半导体开关元件电涌抑制器规范（TSS）

This part of SANS 61643 is a test specification standard for thyristor surge suppressors (TSS) components designed to limit overvoltages and divert surge currents by clipping and crowbarring actions. Such components are used in the construction of surge

Components for low-voltage surge protective devices Part 341: Specification for thyristor surge suppressors (TSS)

JIS C 5381-321:2004 低压电涌保护设备元件.雪崩击穿二极管规范

この規格は，低圧配電システム。伝送及び信号回線に接続するサージ防護デベイスの設計及び構成に用いるサージ防護デベイス用素子(以下.SPDCという。)のアベランシブレークダウンダィオード(以下,ABDという。)の試験方法について規定する。この規格の試験仕様は，2端子からなるABD単体用のものとする。

Components for low-voltage surge protective devices -- Specifications for avalanche breakdown diode (ABD)

LST EN 61643-321-2003 低压浪涌保护装置的组件 第321部分：雪崩击穿二极管（ABD）规范（IEC 61643-321:2001）

Components for low-voltage surge protection devices - Part 321: Specifications for avalanche breakdown diode (ABD) (IEC 61643-321:2001)

SJ 50033/164-2003 半导体分立器件PIN0002型PIN二极管详细规范

Semiconductor discrete device Detail specification of type PIN0002 PIN diode

SJ 50033/162-2003 半导体分立器件2CW1022型硅双向电压调整二极管详细规范

Semiconductor discrete device Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes