31.080.10 二极管 标准查询与下载
共找到 343 条与 二极管 相关的标准，共 23 页
Semiconductor discrete device Detail specification of type PIN0002 PIN diode
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 2003-12-15
- 实施
- 2004-03-01
Semiconductor devices.discrete devices.part 8: field.effect transistors section three: blank detail specification for case.rated field.effect transistors for switching applications
- ICS
- 31.080.10
- CCS
- 发布
- 2003-10-30
- 实施
Semiconductor devices.discrete devices.part 8: field.effect transistors section two: blank detail specification for field.effect transistors for case.rated power amplifier applications
- ICS
- 31.080.10
- CCS
- 发布
- 2003-10-30
- 实施
Semiconductor devices.discrete devices.part 8: field.effect transistors section one: blank detail specification for single.gate field.effect transistors, up to 5 w and 1 ghz
- ICS
- 31.080.10
- CCS
- 发布
- 2003-10-30
- 实施
Semiconductor devices.part 10: generic specification for discrete devices and integrated circuits
- ICS
- 31.080.10
- CCS
- 发布
- 2003-10-30
- 实施
Surface mounting technology.discrete devices.part 9: insulated.gate bipolar transistors (igbts)
- ICS
- 31.080.10
- CCS
- 发布
- 2003-10-30
- 实施
TEST METHODS OF LASER DIODES USED FOR RECORDING AND PLAYBACK
- ICS
- 31.080.10
- CCS
- 发布
- 2003-08-01
- 实施
GENERAL RULES OF LASER DIODES USED FOR RECORDING AND PLAYBACK
- ICS
- 31.080.10
- CCS
- 发布
- 2003-08-01
- 实施
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
MICROCIRCUIT, LINEAR, QUAD SCHOTTKY DIODE ARRAY, MONOLITHIC SILICON
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 2003-06-11
- 实施
Semiconductor discrete device Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14～18
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 2002-10-30
- 实施
- 2003-03-01
Semiconductor discrete devices Detail specification for type 2CK140 microwave switch diode
- ICS
- 31.080.10
- CCS
- L45
- 发布
- 2002-10-30
- 实施
- 2003-03-01
Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2DW230～236
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 2002-10-30
- 实施
- 2003-03-01
Semiconductor discrete devices Detail specification for type 2CK141 microwave switch diode
- ICS
- 31.080.10
- CCS
- L45
- 发布
- 2002-10-30
- 实施
- 2003-03-01
TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
- ICS
- 31.080.10
- CCS
- 发布
- 20021023
- 实施
- 20021023
RELIABILITY ASSURED LOW CURRENT SWITCHING DIODES
- ICS
- 31.080.10
- CCS
- 发布
- 2002-09-25
- 实施
RELIABILITY ASSURED RECTIFIER DIODES (MEDIUM AND HIGH CURRENT)
- ICS
- 31.080.10
- CCS
- 发布
- 2002-09-25
- 实施
RELIABILITY ASSURED SMALL SIGNAL DIODES
- ICS
- 31.080.10
- CCS
- 发布
- 2002-09-25
- 实施
RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES
- ICS
- 31.080.10
- CCS
- 发布
- 2002-09-25
- 实施
RELIABILITY ASSURED LOW CURRENT RECTIFIER DIODES
- ICS
- 31.080.10
- CCS
- 发布
- 2002-09-25
- 实施
Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
- ICS
- 31.080.10
- CCS
- F80
- 发布
- 2002-09
- 实施
