31.080.20 晶体闸流管 标准查询与下载



共找到 152 条与 晶体闸流管 相关的标准,共 11

This standard applies to thyristor valves with metal oxide surge arresters directly connected between the valve terminals, for use in a line commutated converter for high voltage d.c. power transmission or as part of a back-to-back link. It is restricted to electrical type and production tests. The tests specified in this standard are based on air insulated valves. For other types of valves, the test requirements and acceptance criteria must be agreed.

Thyristor valves for high voltage direct current (HVDC) power transmission — Part 1: Electrical testing

ICS
31.080.20
CCS
L43
发布
1999-02-15
实施
1999-02-15

Thyristor valves for high-voltage direct current (HVDC) power transmission. Electrical testing

ICS
31.080.20
CCS
发布
1999-02-15
实施
1999-02-15

本部分适用于高压直流输电或作为背靠背系统一部分的电网换相换流器的晶闸管阀,在阀两端直接连接有金属氧化物避雷器。本部分只限于电气型式试验和出厂试验。 在本部分规定的试验是以空气绝缘阀为基础的。对于其他类型的阀也必须遵守本试验的要求和验收标准。

Thyristor valves for high voltage direct current (HVDC) power transmission - Part 1: Electrical testing

ICS
31.080.20
CCS
L43;K46
发布
1998-09
实施
2003-02-25

本标准规定了晶闸管基本参数的定量关系和确定参数值得方法。 本标准适用于普通晶闸管、快速晶闸管、可关断晶闸管等单向晶闸管和双向晶闸管。本标准也适用于确定整流二极管的基本参数值。

Criteria for value determination of parameters of thyristor

ICS
31.080.20
CCS
K46
发布
1998-05-26
实施
1998-12-01

This standard describes the measurement of signal diode (IF 5500 mA dc) reverse recovery times of less than 300 ns duration. It may, however, also be used for the measurement of longer recovery times.

Measurement of Reverse Recovery Time for Semiconductor Signal Diodes [Replaced: JEDEC 318-1]

ICS
31.080.20
CCS
L43
发布
1996-07-01
实施

本标准规定了P门极反向阻断三极晶闸管的电特性、热特性、额定值和热循环负载测试方法。 本标准适用于反向阻断型的普通晶闸管和快速晶闸管的测试方法。本标准的测试方法,只要改变电表、电源、电极端子的极性和考虑象限特性,也适用于N门极晶闸管、双向晶闸管、逆导晶闸管和可关断晶闸管。

Test method for reverse blocking triple pole thyristors

ICS
31.080.20
CCS
K46
发布
1994-12-09
实施
1995-06-01

本标准规定了逆导三极晶闸管的极限值、特性、检验要求、标志和包装等技术要求。 本标准适用于KN200/70、200/200、300/100、300/300、400/150和400/400型管壳额定的逆导三极品闸管。

Detail specification for KG5, KG10 and KG200 case-rated turn-off thyristors

ICS
31.080.20
CCS
K46
发布
1994-12-09
实施
1995-06-01

本标准规定了由反向阻断三级晶闸管管芯组成的臂对模块、单相桥模块、三相桥模块、反并联臂对模块以及其它电联结构成的模块的通用测试方法。 本标准适用于5A以上(包括5A)的晶闸管臂对模块、单相桥模块、三相桥模块、反并联臂对模块及其它晶闸管模块,由晶闸管组成的相应组件亦可参照使用。

Test method for thyristor modules Pair of arms and anti-parallel pair of arms

ICS
31.080.20
CCS
L43
发布
1994-12-09
实施
1995-06-01

本标准规定了双向三极品闸管的换向电压临界上升率和通态浪涌电流的测试方法。双向三极晶闸管的一般电热特性和额定值的测试方法及要求应符合有关标准的规定。 本标准适用于双向三极晶闸管的测试。

Test method for two-way triple pole thyristors

ICS
31.080.20
CCS
K46
发布
1994-12-09
实施
1995-06-01

Semiconductor devices; discrete devices and integrated circuits; part 6: thyristors; amendment 2

ICS
31.080.20
CCS
L56
发布
1994-02
实施

Semiconductor discrete device.Detail specification for reverse-blocking thyristor for type 3CT105

ICS
31.080.20
CCS
L43
发布
1992-11-19
实施
1993-05-01

Semiconductor discrete device.Detail specification for reverse-blocking thyristor for types 3CT682,683,685~692 and 3CT5206

ICS
31.080.20
CCS
L43
发布
1992-11-19
实施
1993-05-01

Semiconductor discrete device.Detail specification for reverse-blocking thyristor for type 3CT103

ICS
31.080.20
CCS
L43
发布
1992-11-19
实施
1993-05-01

Semiconductor discrete device.Detail specification for reverse-blocking thyristor for type 3CT107

ICS
31.080.20
CCS
L43
发布
1992-11-19
实施
1993-05-01

Semiconductor devices; discrete devices and integrated circuits; part 6: thyristors; amendment 1

ICS
31.080.20
CCS
L43;L40
发布
1991-08
实施

This Standard gives the system for numbering like-named electrodes or terminal functions in serniconductor devices and for assigning numerical designations to units of multiple-unit semiconductor devices. It applies to both integrated circuits and discrete devices.

Numbering of Like-Named Terminal Functions in Semiconductor Devices and Designation of Units in Multiple-Unit Semiconductor Devices

ICS
31.080.20
CCS
L43
发布
1987-02-01
实施

This Standard details the r u l e s to be followed I f color coding is used to I d e n t I f y JEDEC-assigned t y p e numbers or f o r c a t h o d e I d e n t I f I c a t I o n of discrete semiconductor d e v I c e s .

Color Coding of Discrete Semiconductor Devices

ICS
31.080.20
CCS
L43
发布
1986-03-01
实施

Thyristors. Methods for measuring electrical parameters

ICS
31.080.20
CCS
发布
1986
实施
1987-07-01

This JEDEC Standard is intended to supplement discrete Standards in those situations where the subassemblies or chips within the module are supplied in combinations consistent with the ‘Scope outlined in paragraph 1.0. This Standard addresses only those additional specifications required as a result of the combining of the devices.

Semiconductor Power Control Modules

ICS
31.080.20
CCS
L43
发布
1986
实施

Testing of semiconductor valves for high-voltage D.C. Power transmission.

ICS
31.080.20
CCS
K46
发布
1985-06-01
实施
1985-06-05



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