L56 半导体集成电路 标准查询与下载

DLA SMD-5962-05213 REV B-2007 硅单片三态输出的串联输出电阻器,装有总线状态维持16比特总线收发器,低压氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are eflected in the PIN.

MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, 16-BIT BUS TRANSCEIVER WITH BUS HOLD, SERIES OUTPUT RESISTORS, AND THREE-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-05210 REV B-2007 硅单片三态输出的串联输出电阻器,装有总线状态维持16比特总线缓冲器,低压氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, 16-BIT BUS BUFFER WITH BUS HOLD, SERIES OUTPUT RESISTORS, AND THREE-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-90831 REV A-2007 硅单块 互补金属氧化物半导体8K X 8比特记名诊断的可程序化只读存储器,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT REGISTERED DIAGNOSTIC PROM, MONOLITHIC SILICON

DIN EN 62132-1 Berichtigung 1:2007 集成电路.150kHz～1GHz电磁抗扰度的测量.第1部分:一般条件和定义

Annex ZA has been added by CENELEC.

Integrated circuits - Measurement of electromagnetic immunity, 150 kHz to 1 GHz - Part 1: General conditions and definitions (IEC 62132-1:2006); German version EN 62132-1:2006, Corrigenda to DIN EN 62132-1:2006-06; CENELEC-Corrigendum November 2006 to EN

IEC TS 62404:2007 逻辑数字集成电路.集成电路用I/O接口模型的规范(IMIC版本1.3)

The following items are considered to standardize the electrical modeling of input signals, output signals, power supply and ground terminals of integrated circuits, in order to provide for analysis of electrical characteristics of equipment. 1) To standardize in order to solve current problems and in order to extend capabilities of analysis, on the basis of results of the past standardization activities. 2) To define more flexible description rules for electric circuits in order to provide more accurate analysis of printed circuit board. 3) To introduce the concept of modeling levels to exchange relevant data for each application. 4) To enhance electrical modeling for packages and modules.

Logic digital integrated circuits - Specification for I/O interface model for integrated circuit (IMIC version 1.3)

DLA SMD-5962-90715 REV B-2007 硅单块 互补金属氧化物半导体4K X9先进先出,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4K X 9 FIFO, MONOLITHIC SILICON

DLA SMD-5962-91508 REV C-2007 硅单块 16K X 8双门静态随机存取存储器,互补金属氧化物半导体,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 16K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

DLA SMD-5962-90969 REV B-2007 硅单块 第功率电压比较器,四列互补金属氧化物半导体,直线式微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, CMOS, QUAD, LOW POWER VOLTAGE COMPARATOR, MONOLITHIC SILICON

DLA SMD-5962-91677 REV A-2007 硅单块 8K X 9双门先进先出,互补金属氧化物半导体,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are eflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 9 DUAL PORT FIFO, MONOLITHIC SILICON

DLA SMD-5962-91546 REV B-2007 硅单块 一次可编程逻辑阵列,互补金属氧化物半导体,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON

DLA SMD-5962-85030 REV H-2007 硅单片可编程中断控制器,高速氧化物半导体数字微型电路

This drawing describes device requirements for class H hybrid microcircuits to be processed in accordance with MIL-PRF-38534 and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

MICROCIRCUIT, HYBRID, LINEAR, PRECISION VOLTAGE REFERENCES, THIN FILM

DLA SMD-5962-89954 REV A-2007 硅单片,双重同步计数器,高速氧化物半导体数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL SYNCHRONOUS COUNTER, MONOLITHIC SILICON

DLA SMD-5962-92188 REV B-2007 硅单片,TTL兼容输入,装有三态输出的8位收发器D型锁存器,改进型氧化物半导体数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-96594 REV B-2007 抗辐射互补金属氧化物半导体,非倒相八角缓冲器或三状态输出线路驱动器,硅单片电路数字微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

DLA SMD-5962-96596 REV B-2007 抗辐射互补金属氧化物半导体,双重4输入与门硅单片电路数字微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NOR GATE, MONOLITHIC SILICON

DLA SMD-5962-96593 REV B-2007 抗辐射互补金属氧化物半导体,倒相八角缓冲器或三状态输出线路驱动器,硅单片电路数字微电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-01510 REV D-2007 单片硅辐射硬化线性微电路四电压比较器

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, LINEAR, RADIATION HARDENED, QUAD VOLTAGE COMPARATOR, MONOLITHIC SILICON

DLA SMD-5962-05217 REV A-2007 硅单片16比特每秒采样50百万次模拟数字转变器的线性数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the

MICROCIRCUIT, DIGITAL-LINEAR, 12 BIT 50 MSPS ANALOG TO DIGITAL CONVERTER, MONOLITHIC SILICON

DLA SMD-5962-76043 REV E-2007 硅单片先行加法器肖脱基小功率TTL数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, DIGITAL, LOW POWER, SCHOTTKY TTL, ADDER, MONOLITHIC SILICON

JEDEC JESD47E-2007 集成电路的压力驱动鉴定

This standard describes a baseline set of acceptance tests for use in qualifying electronic components as new products, a product family, or as products in a process which is being changed.

Stress-Test-Driven Qualification of Integrated Circuits