L56 半导体集成电路 标准查询与下载

DLA SMD-5962-90803 REV C-2007 硅单块 互补金属氧化物半导体8K X8比特程序,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT PROM, MONOLITHIC SILICON

DLA SMD-5962-87564 REV C-2007 硅单块 三重4-3-3输入或非门,发射极耦合逻辑,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ECL, TRIPLE 4-3-3 INPUT NOR GATE, MONOLITHIC SILICON

DLA SMD-5962-89712 REV B-2007 硅单片,16K X 4BITS静态随机存取存储器,氧化物半导体数字记忆微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 16K X 4 BITS SRAM, (STD POWER), MONOLITHIC SILICON

DLA SMD-5962-01501 REV D-2007 线性混合微电路 3.3伏单通道直流-直流变换器

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

MICROCIRCUIT, HYBRID, LINEAR, 3.3-VOLT, SINGLE CHANNEL, DC-DC CONVERTER

DLA SMD-5962-87541 REV C-2007 硅单块 三输出或门,三输入发射极耦合逻辑,数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ECL, THREE-INPUT, THREE-OUTPUT OR GATE, MONOLITHIC SILICON

DLA SMD-5962-94618 REV A-2007 硅单片,装有正向三态输出,TTL可兼容输入的八位总线收发器,改进型氧化物半导体双极数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-94616 REV A-2007 硅单片,装有三态输出,TTL可兼容输入的总线收发器及寄存器的扫描测试设置,改进型氧化物半导体双极数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL BUS TRANSCEIVER AND REGISTER, THREE-SATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-93186 REV B-2007 硅单片,装有三态输出,TTL可兼容输入的八位总线收发器的扫描测试设置,改进型氧化物半导体双极数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-92156 REV J-2007 硅单块 800门场可编程门阵列,互补金属氧化物半导体,主储存器微型电路

Add 04 and 05 devices, change case outlines from CQCC2-F172 to figure 4. Page 3, section 1.3 changed TJ from 175°C to 150°C. Added appendix A for die. Added CQFP package option case U, and binning circuitry delay for 04 and 05 in Table IA. Ksr

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 8000 GATES, MONOLITHIC SILICON

DLA SMD-5962-92062 REV B-2007 硅单块 紫外擦拭可编程逻辑设备,互补金属氧化物半导体,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON

DLA SMD-5962-91760 REV D-2007 硅单块 一次可编程逻辑设备,双互补金属氧化物半导体,数字主储存器微型电路

This drawing documents three product assurance class levels consisting of space application (device class V),high reliability (device classes M and Q), and ontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.

MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, ONE TIME PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON

DLA SMD-5962-92141 REV B-2007 硅单块 逐步增加转换控制器,低功率固定或可调试,互补金属氧化物半导体,直线式微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, LINEAR, CMOS, FIXED/ADJUSTABLE, LOW POWER, STEP-UP SWITCHING REGULATOR, MONOLITHIC SILICON

DLA SMD-5962-87536 REV A-2007 硅单块 非倒转3态双极八进制缓冲器数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, BIPOLAR OCTAL BUFFER, NON-INVERTING THREE-STATE, MONOLITHIC SILICON

DLA SMD-5962-87511 REV B-2007 硅单块 移位寄存器发射极耦合逻辑数字微型电路

This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

MICROCIRCUIT, DIGITAL, ECL, SHIFT REGISTER, MONOLITHIC SILICON

DLA SMD-5962-92127 REV C-2007 硅单块 转换控制器,逐步减低正5瓦特可调试输出,互补金属氧化物半导体,直线式微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V).

MICROCIRCUIT, LINEAR, CMOS, +5 V/ADJUSTABLE OUTPUT, STEP-DOWN, SWITCHING REGULATOR, MONOLITHIC SILICON

DLA SMD-5962-90964 REV B-2007 硅单块 1200门场可编程门阵列,互补金属氧化物半导体,数字主储存器微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 1200 GATES, MONOLITHIC SILICON

DLA SMD-5962-90622 REV D-2007 硅单片,4M X 1动态随机存取存储器,氧化物半导体数字记忆微型电路

Changes in accordance with NOR 5962-R204-95. jb 95-10-30 Michael A. Frye B Changes in accordance with NOR 5962-R051-98. ksr 98-03-06 Raymond Monnin C Changes in accordance with NOR 5962-R137-98. glg 98-07-20 Raymond Monnin D Boilerplate update and part of five year review. Tcr

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4M X 1 DYNAMIC RANDOM ACCESS MEMORY (DRAM) MONOLITHIC SILICON

DLA SMD-5962-02551 REV A-2007 12V单信道线性混合微电路直流/直流转换器

This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534.

MICROCIRCUIT, HYBRID, LINEAR, 12 VOLT, SINGLE CHANNEL, DC/DC CONVERTER

DLA SMD-5962-93147 REV A-2007 硅单片,TTL兼容输入,装有三态输出的八位边缘触发的D型双稳态多谐振荡器,改进型氧化物半导体双极数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

DLA SMD-5962-94586 REV A-2007 硅单片,装有三态输出,TTL可兼容输入的八位总线收发器及寄存器的扫描测试设置,改进型氧化物半导体双极数字微型电路

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or I dentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.

MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE, OCTAL BUS TRANSCEIVER AND REGISTER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON