JEDEC JESD28-A-2001 测量DC压力下最大基层电流N-信道MOSFET Hot-Carrier-Induced降级被谁引用

找不到引用JEDEC JESD28-A-2001 测量DC压力下最大基层电流N-信道MOSFET Hot-Carrier-Induced降级的标准

适用范围: Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability concern in modern microcircuits. High energy carriers, also called hot carriers, are generated in the MOSFET by the large channel electric fields near the drain region. The electric fields accelerate the carriers to effective temperatures well above the lattice temperature. These hot carriers transfer energy to the lattice through phonon emission and break bonds at the Si/SiO2 interface. Carriers also are injected into the Si02 and can be trapped there. The trapping or bond breaking creates oxide charge and interface traps that affect the channel carrier mobility and the effective channel potential.

JEDEC JESD28-A-2001测量DC压力下最大基层电流N-信道MOSFET Hot-Carrier-Induced降级