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crystal peak
crystal peak, Total:500 items.
In the international standard classification, crystal peak involves: Farming and forestry, Standardization. General rules, Medical equipment, Piezoelectric and dielectric devices, Solar energy engineering, Glass, Pesticides and other agrochemicals, Electronic components in general, Semiconductor devices, Optoelectronics. Laser equipment, IT terminal and other peripheral equipment, Inorganic chemicals, Analytical chemistry, Semiconducting materials, Testing of metals, Electric filters, Nuclear energy engineering, Environmental protection, Electrical and electronic testing, Audio, video and audiovisual engineering, Electronic display devices, Industrial furnaces, Radiation measurements, Non-ferrous metals, Optics and optical measurements, Technical product documentation, Magnetic materials, Galvanic cells and batteries, Plastics, Organic chemicals, Non-metalliferous minerals, Ceramics, Education, Vocabularies, Integrated circuits. Microelectronics, Sugar. Sugar products. Starch, Test conditions and procedures in general, Road vehicle systems, Rectifiers. Convertors. Stabilized power supply, Cinematography, Components for electrical equipment, Jewellery, Electricity. Magnetism. Electrical and magnetic measurements, Cutting tools, Particle size analysis. Sieving, Products of the chemical industry, Production of metals, Electrical equipment for working in special conditions, Graphical symbols, Chipless working equipment, Energy and heat transfer engineering in general.
Group Standards of the People's Republic of China, crystal peak
American National Standards Institute (ANSI), crystal peak
ES-UNE, crystal peak
- UNE-EN 120003:1992 BDS: PHOTOTRANSISTORS, PHOTOCARLINGTON TRANSISTORS, PHOTOTRANSISTOR ARRAYS. (Endorsed by AENOR in September of 1996.)
- UNE-EN ISO 11979-7:2018 Ophthalmic implants - Intraocular lenses - Part 7: Clinical investigations of intraocular lenses for the correction of aphakia (ISO 11979-7:2018) (Endorsed by Asociación Española de Normalización in June of 2018.)
- UNE-EN 168100:1993 SS: QUARTZ CRYSTAL UNITS. (Endorsed by AENOR in November of 1996.)
- UNE-EN ISO 11979-10:2018 Ophthalmic implants - Intraocular lenses - Part 10: Clinical investigations of intraocular lenses for correction of ametropia in phakic eyes (ISO 11979-10:2018) (Endorsed by Asociación Española de Normalización in June of 2018.)
- UNE-EN IEC 60122-4:2019 Quartz crystal units of assessed quality - Part 4: Crystal units with thermistors (Endorsed by Asociación Española de Normalización in May of 2019.)
HU-MSZT, crystal peak
SE-SIS, crystal peak
RO-ASRO, crystal peak
Professional Standard - Medicine, crystal peak
Japanese Industrial Standards Committee (JISC), crystal peak
Danish Standards Foundation, crystal peak
- DS/EN ISO 11979-10:2006 Ophthalmic implants - Intraocular lenses - Part 10: Phakic intraocular lenses
- DS/EN ISO 11979-9:2007 Ophthalmic implants - Intraocular lenses - Part 9: Multifocal intraocular lenses
- DS/IEC 458:1981 Transistorized ballasts for tubular fluorescent lamps
- DS/EN 60444-9:2007 Measurement of quartz crystal unit parameters -- Part 9: Measurement of spurious resonances of piezoelectric crystal units
- DS/EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
Association Francaise de Normalisation, crystal peak
- NF B30-004:1974 GLASS.CRYSTAL,CRYSTAL GLASS,CRYSTALLIN.
- NF C93-120-003*NF EN 120003:1992 Blank detail specification : phototransistors, photodarlington transistors, phototransistor arrays
- NF EN 120003:1992 Spécification particulière cadre : phototransistors, transistors photodarlington, réseaux de phototransistors
- NF EN ISO 11979-7:2018 Implants ophtalmiques - Lentilles intraoculaires - Partie 7 : investigations cliniques de lentilles intraoculaires pour la correction de l'aphakie
- NF S94-750-7*NF EN ISO 11979-7:2018 Ophthalmic implants - Intraocular lenses - Part 7 : clinical investigations of intraocular lenses for the correction of aphakia
- NF EN ISO 11979-10:2018 Implants ophtalmiques - Lentilles intraoculaires - Partie 10 : Investigations cliniques de lentilles intraoculaires pour la correction de l'amétropie des yeux phaques
- NF S94-750-10*NF EN ISO 11979-10:2018 Ophthalmic implants - Intraocular lenses - Part 10 : Clinical investigations of intraocular lenses for correction of ametropia in phakic eyes
- NF C96-611/A1:1972 Semiconductors
Junction transistors
Particular Standard Sheets
- NF S94-750-10:2006 Ophthalmic implants - Intraocular lenses - Part 10 : phakic intraocular lenses.
- NF S94-750-10/A1:2014 Ophthalmic implants - Intraocular lenses - Part 10 : phakic intraocular lenses - Amendment 1
- NF C93-621-9*NF EN 60444-9:2014 Measurement of quartz crystal unit parameters - Part 9 : measurement of spurious resonances of piezoelectric crystal units
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, crystal peak
- GB 9558-2001 Crystallo-dimethoate
- GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
- GB/T 1555-2023 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal
- GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
- GB/T 31958-2023 Substrate glass for amorphous silicon thin film transistor liquid crystal display
- GB/T 42676-2023 X-ray Diffraction Method for Testing the Quality of Semiconductor Single Crystal
- GB/T 3352-1994 Synthetic quartz crystal
- GB/T 3351~353-1982 artificial quartz crystal
- GB/T 8553-2023 General specifications for crystal boxes
- GB/T 8553-1987 Holders (Enclosures), crystal, general specification for
- GB/T 8756-1988 Collection of metallographs on defects of crystalline germanium
- GB/T 31958-2015 Substrate glass for thin film transistor liquid crystal display device
- GB 51136-2015 Specifications for factory design of thin film transistor liquid crystal display
- GB/T 6628-1996 Lumbered synthetic quartz crystal
- GB/T 7895-1987 Optical grade synthetic quartz crystal
- GB/T 7895-2008 Optical grade synthetic quartz crystal
- GB/T 6430-1986 The rule of type designation for crystal holders (enclosures)
- GB/T 26762-2011 Crystalline fructose and solid fructose-glucose
- GB 6430-1986 Crystal box model nomenclature
- GB/T 16863-1997 Method for testing refractive index of crystals
- GB/T 12633-1990 Terms for the measurements of the properties of the piezoelectric crystals
- GB 12274-1990 Quartz crystal controlled oscillators Generic specificatoin for
- GB/T 3353-1995 Guide to the use of synthetic quartz crystal
- GB/T 22319.7-2015 Measurement of quartz crystal unit parameters.Part 7:Measurement of activity dips of quartz crystal units
Professional Standard - Machinery, crystal peak
中华人民共和国国家质量监督检验检疫总局, crystal peak
European Standard for Electrical and Electronic Components, crystal peak
- EN 120003:1992 Blank detail specification: phototransistors, photodarlington transistors, phototransistor arrays
German Institute for Standardization, crystal peak
- DIN EN 120003:1996 Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
- DIN EN 120003:1996-11 Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
- DIN EN ISO 11979-7:2018-08 Ophthalmic implants - Intraocular lenses - Part 7: Clinical investigations of intraocular lenses for the correction of aphakia (ISO 11979-7:2018); German version EN ISO 11979-7:2018
- DIN 52341:1993 Testing of glass; chemical analysis of lead crystal glass and crystal glass
- DIN EN ISO 11979-7:2023-04 Ophthalmic implants - Intraocular lenses - Part 7: Clinical investigations of intraocular lenses for the correction of aphakia (ISO/DIS 11979-7:2023); German and English version prEN ISO 11979-7:2023 / Note: Date of issue 2023-03-03*Intended as replace...
- DIN EN ISO 11979-7:2018 Ophthalmic implants - Intraocular lenses - Part 7: Clinical investigations of intraocular lenses for the correction of aphakia (ISO 11979-7:2018)
- DIN EN ISO 11979-10:2018-08 Ophthalmic implants - Intraocular lenses - Part 10: Clinical investigations of intraocular lenses for correction of ametropia in phakic eyes (ISO 11979-10:2018); German version EN ISO 11979-10:2018
- DIN 4000-19:1988-12 Tabular layouts of article characteristics for transistors and thyristors
- DIN EN IEC 60122-4:2019-10 Quartz crystal units of assessed quality - Part 4: Crystal units with thermistors (IEC 60122-4:2019); German version EN IEC 60122-4:2019
- DIN EN ISO 11979-10:2018 Ophthalmic implants - Intraocular lenses - Part 10: Clinical investigations of intraocular lenses for correction of ametropia in phakic eyes (ISO 11979-10:2018)
- DIN IEC 60679-2:1997 Quartz crystal controlled oscillators - Part 2: Guide to the use of quartz crystal controlled oscillators (IEC 60679-2:1981)
- DIN EN 60444-9:2007 Measurement of quartz crystal unit parameters - Part 9: Measurement of spurious resonances of piezoelectric crystal units (IEC 60444-9:2007); German version EN 60444-9:2007
- DIN EN ISO 11979-10:2006 Ophthalmic implants - Intraocular lenses - Part 10: Phakic intraocular lenses (ISO 11979-10:2006); English version of DIN EN ISO 11979-10:2006-11
- DIN EN 60444-9:2007-12 Measurement of quartz crystal unit parameters - Part 9: Measurement of spurious resonances of piezoelectric crystal units (IEC 60444-9:2007); German version EN 60444-9:2007
Taiwan Provincial Standard of the People's Republic of China, crystal peak
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, crystal peak
Lithuanian Standards Office , crystal peak
- LST EN 120003-2001 Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
- LST EN ISO 11979-10:2007 Ophthalmic implants - Intraocular lenses - Part 10: Phakic intraocular lenses (ISO 11979-10:2006)
- LST EN ISO 11979-9:2007 Ophthalmic implants - Intraocular lenses - Part 9: Multifocal intraocular lenses (ISO 11979-9:2006)
- LST EN 50513-2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
British Standards Institution (BSI), crystal peak
- BS EN ISO 11979-7:2018 Ophthalmic implants. Intraocular lenses. Clinical investigations of intraocular lenses for the correction of aphakia
- BS EN ISO 11979-10:2006 Ophthalmic implants - Intraocular lenses - Phakic intraocular lenses
- 23/30453001 DC BS EN ISO 11979-7. Ophthalmic implants. Intraocular lenses - Part 7. Clinical investigations of intraocular lenses for the correction of aphakia
- BS EN ISO 11979-10:2018 Tracked Changes. Ophthalmic implants. Intraocular lenses. Clinical investigations of intraocular lenses for correction of ametropia in phakic eyes
- BS EN 120003:1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays
- BS EN 60444-9:2007 Measurement of quartz crystal unit parameters - Measurement of spurious resonances of piezoelectric crystal units
- BS EN IEC 60122-4:2019 Quartz crystal units of assessed quality - Crystal units with thermistors
- BS EN 120003:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
- BS EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
- BS EN 60444-8:2003 Measurement of quartz crystal unit parameters - Test fixture for surface mounted quartz crystal units
- BS EN 60444-8:2017 Measurement of quartz crystal unit parameters. Test fixture for surface mounted quartz crystal units
- BS IEC 60747-7:2011 Semiconductor devices. Discrete devices. Bipolar transistors
- BS IEC 60747-7:2010 Semiconductor devices. Discrete devices. Bipolar transistors
- BS IEC 60747-7:2010+A1:2019 Semiconductor devices. Discrete devices - Bipolar transistors
- BS IEC 60747-8:2010 Semiconductor devices. Discrete devices. Field-effect transistors
- BS IEC 60747-8:2010+A1:2021 Semiconductor devices. Discrete devices - Field-effect transistors
- BS PD ISO/TS 23151:2021 Nanotechnologies. Particle size distribution for cellulose nanocrystals. Particle size distribution for cellulose nanocrystals
- BS EN 60444-7:2004 Measurement of quartz crystal unit parameters - Measurement of activity and frequency dips of quartz crystal units
- BS EN 60444-2:1997 Measurement of quartz crystal unit parameters. Phase offset method for measurement of motional capacitance of quartz crystal units
CZ-CSN, crystal peak
Professional Standard - Light Industry, crystal peak
Professional Standard - Building Materials, crystal peak
Korean Agency for Technology and Standards (KATS), crystal peak
Guizhou Provincial Standard of the People's Republic of China, crystal peak
轻工业部, crystal peak
AENOR, crystal peak
- UNE-EN ISO 11979-10:2007 Ophthalmic implants - Intraocular lenses - Part 10: Phakic intraocular lenses (ISO 11979-10:2006)
- UNE-EN ISO 11979-10:2007/A1:2014 Ophthalmic implants - Intraocular lenses - Part 10: Phakic intraocular lenses (ISO 11979-10:2006/Amd 1:2014)
- UNE-EN ISO 11979-9:2007 Ophthalmic implants - Intraocular lenses - Part 9: Multifocal intraocular lenses (ISO 11979-9:2006)
- UNE-EN 50513:2011 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
U.S. Military Regulations and Norms, crystal peak
- ARMY MIL-PRF-55310/18 F-2009 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.01 Hz THROUGH 15.0 MHz, HERMETIC SEAL, SQUARE WAVE, CMOS
- ARMY MIL-PRF-55310/28 C-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHz THROUGH 85 MHz, HERMETIC SEAL, SQUARE WAVE, TTL
- ARMY MIL-PRF-55310/8 J-2009 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 50 Hz THROUGH 50 MHz, HERMETIC SEAL, SQUARE WAVE, TTL
- ARMY MIL-P-46320 C (4)-1972 POWER SUPPLY: 10516158 (TRANSISTORIZED)
- ARMY MIL-P-46320 C-1963 POWER SUPPLY: 10516158 (TRANSISTORIZED)
- ARMY QPL-46320-30-1992 POWER SUPPLY, 10516158 (TRANSISTORIZED)
- ARMY MIL-PRF-3098/84 F-2013 CRYSTAL UNITS, QUARTZ, CR108/U
- ARMY MIL-PRF-3098/95 E VALID NOTICE 2-2013 Crystal Unit, Quartz, CR119/U
- ARMY MIL-PRF-55310/29 C-2011 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.2 MHz THROUGH 85 MHz, HERMETIC SEAL, SQUARE WAVE, HCMOS
- ARMY MIL-PRF-55310/34 C-2013 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 500 KHz THROUGH 150 MHz, HERMETIC SEAL, LOW VOLTAGE CMOS
- ARMY MIL-PRF-55310/38 B-2013 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 500 KHz THROUGH 150 MHz, HERMETIC SEAL, LOW VOLTAGE CMOS
- ARMY MIL-PRF-55310/28 C VALID NOTICE 1-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz Through 85 MHz, Hermetic Seal, Square Wave, TTL
- ARMY MIL-PRF-55310/30 D VALID NOTICE 1-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 450 KHz Through 100 MHz, Hermetic Seal, Low Voltage CMOS
- ARMY MIL-PRF-3098/16 H VALID NOTICE 1-2008 Crystal Unit, Quartz, CR36/U
- ARMY MIL-PRF-3098/17 F VALID NOTICE 1-2008 Crystal Unit, Quartz, CR37/U
- ARMY MIL-PRF-3098/21 G VALID NOTICE 1-2008 Crystal Unit, Quartz, CR42/U
- ARMY MIL-PRF-3098/25 F VALID NOTICE 1-2008 Crystal Unit, Quartz, CR46/U
- ARMY MIL-PRF-3098/26 G VALID NOTICE 1-2008 Crystal Unit, Quartz, CR47/U
- ARMY MIL-PRF-3098/30 F VALID NOTICE 1-2008 CRYSTAL UNIT, QUARTZ, CR52/U
- ARMY MIL-PRF-3098/32 F VALID NOTICE 1-2008 Crystal Unit, Quartz, CR54/U
- ARMY MIL-PRF-3098/33 J VALID NOTICE 1-2008 CRYSTAL UNIT, QUARTZ, CR55/U
- ARMY MIL-PRF-3098/36 E VALID NOTICE 1-2008 Crystal Unit, Quartz, CR58/U
- ARMY MIL-PRF-3098/37 J VALID NOTICE 1-2008 CRYSTAL UNIT, QUARTZ, CR59/U
- ARMY MIL-PRF-3098/38 G VALID NOTICE 1-2008 CRYSTAL UNIT, QUARTZ, CR60/U
- ARMY MIL-PRF-3098/41 H VALID NOTICE 1-2008 Crystal Unit, Quartz, CR63/U
- ARMY MIL-PRF-3098/45 J VALID NOTICE 1-2008 Crystal Unit, Quartz, CR67/U
- ARMY MIL-PRF-3098/47 J VALID NOTICE 1-2008 CRYSTAL UNIT, QUARTZ, CR69/U
- ARMY MIL-PRF-3098/63 F VALID NOTICE 1-2008 CRYSTAL UNIT, QUARTZ, CR79/U
- ARMY MIL-PRF-3098/95 E VALID NOTICE 1-2008 Crystal Unit, Quartz, CR119/U
- ARMY MIL-PRF-3098/103 E VALID NOTICE 1-2008 Crystal Unit, Quartz, CR101/U
- ARMY MIL-PRF-3098/109 E VALID NOTICE 1-2008 Crystal Unit, Quartz, CR130/U
- ARMY MIL-PRF-3098/146 C VALID NOTICE 1-2008 Crystal Unit, Quartz, CR165/U
- ARMY MIL-PRF-3098/3 F VALID NOTICE 1-2008 Crystal Unit, Quartz, CR18/U
- ARMY MIL-PRF-3098/4 F VALID NOTICE 1-2008 Crystal Unit, Quartz, CR19/U
- ARMY MIL-PRF-3098/7 H VALID NOTICE 1-2008 Crystal Unit, Quartz, CR25/U
- ARMY MIL-PRF-3098/8 F VALID NOTICE 1-2008 Crystal Unit, Quartz, CR26/U
- ARMY MIL-PRF-3098/9 G VALID NOTICE 1-2008 Crystal Unit, Quartz, CR27/U
- ARMY MIL-PRF-3098/10 G VALID NOTICE 1-2008 Crystal Unit, Quartz, CR28/U
- ARMY MIL-PRF-3098/14 F VALID NOTICE 1-2008 Crystal Unit, Quartz, CR33/U
- ARMY MIL-PRF-3098/15 G VALID NOTICE 1-2008 Crystal Unit, Quartz, CR35/U
- ARMY QPL-55310-70-2008 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
- ARMY MIL-PRF-3098/103 F-2010 CRYSTAL UNIT, QUARTZ, CR101/U
- ARMY MIL-PRF-3098/109 F-2010 CRYSTAL UNIT, QUARTZ, CR130/U
- ARMY MIL-PRF-3098/146 D-2010 CRYSTAL UNIT, QUARTZ, CR165/U
- ARMY MIL-PRF-3098/62 G-2010 CRYSTAL UNIT, QUARTZ, CR78/U
- ARMY MIL-PRF-3098/63 G-2010 CRYSTAL UNIT, QUARTZ, CR79/U
- ARMY MIL-PRF-3098/68 G-2010 CRYSTAL UNIT, QUARTZ, CR91/U
- ARMY MIL-PRF-3098/72 F-2010 CRYSTAL UNIT, QUARTZ, CR97/U
- ARMY MIL-PRF-3098/77 F-2010 CRYSTAL UNIT, QUARTZ, CR5/U
- ARMY MIL-PRF-3098/78 F-2010 CRYSTAL UNIT, QUARTZ, CR6/U
- ARMY MIL-PRF-3098/54 G-2010 CRYSTAL UNIT, QUARTZ, CR73/U
- ARMY MIL-PRF-3098/56 H-2010 CRYSTAL UNIT, QUARTZ, CR85/U
- ARMY MIL-PRF-3098/58 J-2010 CRYSTAL UNIT, QUARTZ, CR81/U
- ARMY MIL-PRF-3098/59 G-2010 CRYSTAL UNIT, QUARTZ, CR82/U
- ARMY MIL-PRF-3098/60 H-2010 CRYSTAL UNIT, QUARTZ, CR83/U
- ARMY MIL-PRF-3098/67 F-2010 CRYSTAL UNIT, QUARTZ, CR89/U
- ARMY MIL-PRF-3098/38 H-2010 CRYSTAL UNIT, QUARTZ, CR60/U
- ARMY MIL-PRF-3098/39 H-2010 CRYSTAL UNIT, QUARTZ, CR61/U
- ARMY MIL-PRF-3098/40 G-2010 CRYSTAL UNITS, QUARTZ, CR62/U
- ARMY MIL-PRF-3098/41 J-2010 CRYSTAL UNIT, QUARTZ, CR63/U
- ARMY MIL-PRF-3098/42 K-2010 CRYSTAL UNIT, QUARTZ, CR64/U
- ARMY MIL-PRF-3098/43 H-2010 CRYSTAL UNIT, QUARTZ, CR65/U
- ARMY MIL-PRF-3098/45 K-2010 CRYSTAL UNIT, QUARTZ, CR67/U
- ARMY MIL-PRF-3098/47 K-2010 CRYSTAL UNIT, QUARTZ, CR69/U
- ARMY MIL-PRF-3098/50 E-2010 CRYSTAL UNIT, QUARTZ, CR72/U
- ARMY MIL-PRF-3098/51 J-2010 CRYSTAL UNIT, QUARTZ, CR74/U
- ARMY MIL-PRF-3098/52 H-2010 CRYSTAL UNIT, QUARTZ, CR75/U
- ARMY MIL-PRF-3098/53 M-2010 CRYSTAL UNIT, QUARTZ, CR76/U
- ARMY MIL-PRF-3098/3 G-2010 CRYSTAL UNIT, QUARTZ, CR18/U
- ARMY MIL-PRF-3098/4 G-2010 CRYSTAL UNIT, QUARTZ, CR19/U
- ARMY MIL-PRF-3098/7 J-2010 CRYSTAL UNIT, QUARTZ, CR25/U
- ARMY MIL-PRF-3098/8 G-2010 CRYSTAL UNIT, QUARTZ, CR26/U
- ARMY MIL-PRF-3098/9 H-2010 CRYSTAL UNIT, QUARTZ, CR27/U
- ARMY MIL-PRF-3098/10 H-2010 CRYSTAL UNIT, QUARTZ, CR28/U
- ARMY MIL-PRF-3098/14 G-2010 CRYSTAL UNIT, QUARTZ, CR33/U
- ARMY MIL-PRF-3098/15 H-2010 CRYSTAL UNIT, QUARTZ, CR35/U
- ARMY MIL-PRF-3098/16 J-2010 CRYSTAL UNIT, QUARTZ, CR36/U
- ARMY MIL-PRF-3098/17 G-2010 CRYSTAL UNIT, QUARTZ, CR37/U
- ARMY MIL-PRF-3098/21 H-2010 CRYSTAL UNIT, QUARTZ, CR42/U
- ARMY MIL-PRF-3098/24 F-2010 CRYSTAL UNIT, QUARTZ, CR45/U
- ARMY MIL-PRF-3098/25 G-2010 CRYSTAL UNIT, QUARTZ, CR46/U
- ARMY MIL-PRF-3098/26 H-2010 CRYSTAL UNIT, QUARTZ, CR47/U
- ARMY MIL-PRF-3098/30 G-2010 CRYSTAL UNIT, QUARTZ, CR52/U
- ARMY MIL-PRF-3098/32 G-2010 CRYSTAL UNIT, QUARTZ, CR54/U
- ARMY MIL-PRF-3098/33 K-2010 CRYSTAL UNIT, QUARTZ, CR55/U
- ARMY MIL-PRF-3098/34 J-2010 CRYSTAL UNIT, QUARTZ, CR56/U
- ARMY MIL-PRF-3098/36 F-2010 CRYSTAL UNIT, QUARTZ, CR58/U
- ARMY MIL-PRF-3098/37 K-2010 CRYSTAL UNIT, QUARTZ, CR59/U
- ARMY QPL-55310-71-2010 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
- ARMY QPL-55310-74-2010 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
- ARMY MIL-PRF-3098 K-2010 CRYSTAL UNITS, QUARTZ GENERAL SPECIFICATION FOR
- ARMY MIL-PRF-3098 K (1)-2011 CRYSTAL UNITS, QUARTZ GENERAL SPECIFICATION FOR
- ARMY MIL-PRF-3098 K (1) SUPP 1-2013 CRYSTAL UNITS, QUARTZ GENERAL SPECIFICATION FOR
- ARMY MIL-PRF-55310/36 B-2013 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO), 1 MHz THROUGH 100 MHz, HERMETIC SEAL, LOW VOLTAGE 1.8V CMOS
- ARMY MIL-PRF-55310/27 C-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHZ THROUGH 85 MHZ, HERMETIC SEAL, SQUARE WAVE, HIGH SPEED CMOS
- ARMY MIL-PRF-55310/40 B-2013 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1 MHz THROUGH 100 MHz, HERMETIC SEAL, LOW VOLTAGE 1.8V CMOS
- ARMY MIL-PRF-55310/27 D VALID NOTICE 1-2013 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 1.0 MHz through 85 MHz, Hermetic Seal, Square Wave, High Speed CMOS
Heilongjiang Provincial Standard of the People's Republic of China, crystal peak
- DB23/T 3600-2023 Guidelines for Preparing the Carbon Peak Carbon Neutral Standard System
International Organization for Standardization (ISO), crystal peak
- ISO/DIS 11979-7 Ophthalmic implants — Intraocular lenses — Part 7: Clinical investigations of intraocular lenses for the correction of aphakia
- ISO/FDIS 11979-7:2011 Ophthalmic implants — Intraocular lenses — Part 7: Clinical investigations of intraocular lenses for the correction of aphakia
- ISO 11979-10:2006 Ophthalmic implants - Intraocular lenses - Part 10: Phakic intraocular lenses
- ISO 11979-10:2018 Ophthalmic implants - Intraocular lenses- Part 10:Clinical investigations of intraocular lenses for correction of ametropia in phakic eyes
- ISO 11979-1:2018 Ophthalmic implants — Intraocular lenses — Part 10: Clinical investigations of intraocular lenses for correction of ametropia in phakic eyes
- ISO 11979-9:2006 Ophthalmic implants - Intraocular lenses - Part 9: Multifocal intraocular lenses
- ISO 11979-10:2006/Amd 1:2014 Ophthalmic implants - Intraocular lenses - Part 10: Phakic intraocular lenses; Amendment 1
- ISO 11979-9:2006/Amd 1:2014 Ophthalmic implants - Intraocular lenses - Part 9: Multifocal intraocular lenses; Amendment 1
IEEE - The Institute of Electrical and Electronics Engineers@ Inc., crystal peak
- IEEE 176-1949 STANDARDS ON PIEZOELECTRIC CRYSTALS
- IEEE 180-1962 STANDARDS ON PIEZOELECTRIC AND FERROELECTRIC CRYSTALS: DEFINITIONS OF FERROELECTRIC CRYSTAL TERMS 1962 (62 IRE 14.S1)
- IEEE 218-1956 STANDARD METHODS OF TESTING TRANSISTORS
Electronic Components, Assemblies and Materials Association, crystal peak
Professional Standard - Education, crystal peak
KR-KS, crystal peak
- KS P ISO 11979-7-2021 Ophthalmic implants — Intraocular lenses — Part 7: Clinical investigations of intraocular lenses for the correction of aphakia
- KS P ISO 11979-10-2019 Ophthalmic implants — Intraocular lenses — Part 10: Clinical investigations of intraocular lenses for correction of ametropia in phakic eyes
- KS C IEC 60679-2-2018 Quartz crystal controlled oscillators — Part 2: Guide to the use of quartz crystal controlled oscillators
- KS C IEC 60679-2-2018(2023) Quartz crystal controlled oscillators — Part 2: Guide to the use of quartz crystal controlled oscillators
- KS C IEC 60122-4-2022 Quartz crystal units of assessed quality —Part 4: Crystal units with thermistors
国家市场监督管理总局、中国国家标准化管理委员会, crystal peak
- GB/T 39865-2021 Method for measuring refractive index of uniaxial optical crystals
- GB/T 37398-2019 Barium fluoride scintillation crystal
- GB/T 8756-2018 Collection of metallographs on defects of germanium crystal
- GB/T 39131-2020 Terms and definitions of synthetic crystal materials
- GB/T 36648-2018 Specification for TFT liquid crystal monomers
- GB/T 36647-2018 Specification for liquid crystal monomers
- GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer
- GB/T 41325-2022 Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit
YU-JUS, crystal peak
- JUS N.R9.071-1986 Piezoelectric vibrators. Quartz crystal units. Two mre crystal holder outline, type 18
- JUS N.R9.070-1986 Piezoelectric vibrators. Ouartz crystal units. Two pin crystal holder outlfne, type09
- JUS N.R9.073-1986 Piezoelectrlc vibrators. Quartz crystal unlts. Two wire crystal holder outline, type 17
- JUS N.R9.069-1986 Piezoelectric vibrators. Quartz crystal units. Two piri crystal holder outline, type 07
- JUS N.R9.064-1986 Piezoelectric vibrators. Ctuartz crystal units. Two wire crystal holder outline. Types 11, 14 and 15
- JUS N.R1.373-1980 Semiconductor ?iodes. Essentialratings and characteristics. Low-power signaldiodes
- JUS N.R1.390-1979 Bipolar tnmmton. Etsential ratings and chancteristics: bw-power signal transistors
- JUS N.R1.450-1981 Bipolar transistors. Measuring methods
- JUS N.R1.352-1979 Letter symbohfor semkonductor devices. Thyristors.
- JUS N.R9.074-1986 Piezoelectric vibrators. Ouartz crystal units. Two wire crystal holder outline, type 19
- JUS N.R9.072-1986 Piezoe/ectric vibrators. Ctuartz crystal units. Two wfre crystaf holder outline, type 16
- JUS N.R9.077-1986 Piezoelectric vibrators. Quartz crystal units. Two wire crystal holder outline, type 20
- JUS N.R9.076-1986 Piezoelectric vibrators. Quartz crystal units. Two pin crystal hotder outllne, type08
- JUS N.R9.075-1986 Piezoelectric vibrators. Quartz crystal units. Two pin crystal holder outline, type 10
- JUS N.R9.078-1986 Piezoelectric vibrators. Quartz crystal units. Turo wire crystal holder outline, type 21
- JUS N.R1.471-1985 Bipolar transistors. Reference methods of measurement
AR-IRAM, crystal peak
TR-TSE, crystal peak
Professional Standard - Electron, crystal peak
PL-PKN, crystal peak
Hebei Provincial Standard of the People's Republic of China, crystal peak
工业和信息化部, crystal peak
Defense Logistics Agency, crystal peak
- DLA MIL-S-19500/529 VALID NOTICE 4-2011 Semiconductor Device, Transistor, Silicon Type 2N3904
- DLA MIL-S-19500/244 B VALID NOTICE 3-2011 Transistor, PNP, Germanium Type 2N2273
- DLA MIL-S-19500/216 A VALID NOTICE 3-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N1051
- DLA MIL-S-19500/273 A VALID NOTICE 3-2011 Semiconductor Device, Transistor Type Type 2N744
- DLA MIL-S-19500/303 VALID NOTICE 3-2011 Semiconductor Device, Transistor, Types 2N2631 and 2N2876
- DLA MIL-S-19500/248 A VALID NOTICE 4-2011 Transistor, NPN, Silicon Types 2N2015, 2N2016
- DLA MIL-M-38510/114 B VALID NOTICE 1-2008 MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
- DLA MIL-PRF-19500/139 B NOTICE 2-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE JAN-2N1119
- DLA MIL-S-19500/288 (2)-1966 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N2377
- DLA MIL-S-19500/288 VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Silicon Type 2N2377
- DLA MIL-S-19500/170 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium Type 2N1499A
- DLA MIL-S-19500/179 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Silicon Type 2N1234
- DLA MIL-S-19500/216 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon Type 2N1051
- DLA MIL-S-19500/40 B VALID NOTICE 3-2011 Semiconductor, Transistor, NPN, Germanium, Power Type 2N326
- DLA SMD-5962-90798-1992 MICROCIRCUITS, DIGITAL, FAST, CMOS, DUAL ODD-PARITY GENERATOR/CHECKERS, TTL COMPATIBLE, MONOLITHIC SILICON
- DLA SMD-5962-85508 REV C-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, MULTIPLEXER, MONOLITHIC SILICON
- DLA SMD-5962-86708 REV A-2007 MICROCIRCUIT, DIGITAL, LOW POWER SCHOTTKY TTL, HIGH SPEED REGISTER, MONOLITHIC SILICON
- DLA MIL-PRF-55310/21 F-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHz THROUGH 60.0 MHz, HERMETIC SEAL, SQUARE WAVE, TTL
- DLA MIL-PRF-55310/21 G-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHz THROUGH 60.0 MHz, HERMETIC SEAL, SQUARE WAVE, TTL
- DLA MIL-PRF-19500/210 B NOTICE 1-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, PHOTO TYPE 2N986
- DLA MIL-S-19500/72 C VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium Types 2N499 and 2N499A
- DLA MIL-S-19500/49 C VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Types 2N464, 2N465, 2N467
- DLA MIL-S-19500/173 A VALID NOTICE 3-2011 Semiconductor Device, Transistor, Types 2N389 and 2N424 (Navy)
- DLA MIL-S-19500/215 VALID NOTICE 3-2011 Semiconductor Device, Transistor, Types 2N1173 and 2N1174 (Navy)
- DLA QPL-3098-91-2006 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA QPL-3098-92-2008 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA QPL-3098-93-2010 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA QPL-3098-95-2010 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA QPL-3098-97-2013 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA QPL-3098-98-2013 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA QPL-3098-99-2013 CRYSTAL UNITS, QUARTZ, GENERAL SPECIFICATION FOR
- DLA DSCC-DWG-04029-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5927
- DLA DSCC-DWG-04030-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5926
- DLA MIL-PRF-19500/25 B NOTICE 2-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N240
- DLA MIL-PRF-19500/27 E NOTICE 2-1999 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-FREQUENCY TYPE 2N384
- DLA MIL-S-19500/68 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Switching Type 2N1120
- DLA MIL-S-19500/80 E VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon, Low-Power Type 3N35
- DLA MIL-S-19500/13 B VALID NOTICE 3-2011 Semiconductor Device, Transistor, PNP, Germanium, High Power Type 2N174A
- DLA MIL-S-19500/25 B VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Low-Power Type 2N240
- DLA MIL-S-19500/36 C VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, High-Power Type 2N297A
- DLA MIL-S-19500/44 D VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Low-Power Type 2N428
- DLA MIL-S-19500/51 E VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Low Power Type 2N466
- DLA MIL-S-19500/58 D VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, High-Power Type 2N665
- DLA MIL-S-19500/330 A VALID NOTICE 4-2011 Semiconductor Device, Transistor PNP, Germanium Types 2N1557A through 2N1560A
- DLA MIL-S-19500/338 VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP Germanium, Switching Type 2N3449
- DLA MIL-S-19500/425 VALID NOTICE 3-2011 Semiconductor Device, Transistor, PN, Silicon, Unijunction JAN2N5431, and JANTX2N5431
- DLA SMD-5962-86075 REV C-2007 MICROCIRCUIT, DIGITAL, ADVANCED SCHOTTKY TTL, SHIFTER, MONOLITHIC SILICON
- DLA SMD-5962-90889 REV C-2008 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, QUADRUPLE BUS BUFFER GATE, TTL COMPATIBLE, MONOLITHIC SILICON
- DLA SMD-5962-95584 REV C-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, TTL, SYNCHRONOUS 4-BIT UP/DOWN COUNTERS, MONOLITHIC SILICON
International Electrotechnical Commission (IEC), crystal peak
- IEC 60679-2:1981 Quartz crystal controlled oscillators. Part 2 : Guide to the use of quartz crystal controlled oscillators
- IEC 60444-9:2007 Measurement of quartz crystal unit parameters - Part 9: Measurement of spurious resonances of piezoelectric crystal units
- IEC 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
- IEC 60122-4:2019 Quartz crystal units of assessed quality - Part 4: Crystal units with thermistors
- IEC 60747-7:2000 Semiconductor devices - Part 7: Bipolar transistors
- IEC 60747-8:2000 Semiconductor devices - Part 8: Field-effect transistors
未注明发布机构, crystal peak
Professional Standard - Chemical Industry, crystal peak
- HG/T 4357-2012 Polarizer for the thin film transistor-Liquid crystal display (TFT-LCD)
RU-GOST R, crystal peak
- GOST 18986.13-1974 Semiconductor tunnel diodes. Methods for measuring peak point current, valley point current, peak point voltage, valley point voltage, projected peak point voltage
- GOST 18604.8-1974 Transistors. Method for measuring output conductivity
United States Navy, crystal peak
National Metrological Verification Regulations of the People's Republic of China, crystal peak
Military Standard of the People's Republic of China-General Armament Department, crystal peak
European Committee for Standardization (CEN), crystal peak
- prEN ISO 11979-7 Ophthalmic implants - Intraocular lenses - Part 7: Clinical investigations of intraocular lenses for the correction of aphakia (ISO/DIS 11979-7:2023)
- EN ISO 11979-10:2018 Ophthalmic implants - Intraocular lenses - Part 10: Clinical investigations of intraocular lenses for correction of ametropia in phakic eyes
- HD 302 S1-1977 Transistorized ballast for fluorescent lamps
- EN ISO 11979-10:2006 Ophthalmic implants - Intraocular lenses - Part 10: Phakic intraocular lenses (ISO 11979-10:2006)
Indonesia Standards, crystal peak
ES-AENOR, crystal peak
ANSI - American National Standards Institute, crystal peak
- Z80.13-2007 Ophthalmics – Phakic Intraocular Lenses (VC)
- Z80.7-2002 For Ophthalmic Optics - Intraocular Lenses (VC)
- Z80.30-2018 Ophthalmics – Toric Intraocular Lenses
- Z80.7-2013 Ophthalmic Optics – Intraocular Lenses (VC)
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, crystal peak
- GB/T 35316-2017 Collection of metallographs on defects of sapphire crystal
- GB/T 34612-2017 Measurement method for X-ray double crystal diffraction rocking curve of sapphire crystals
- GB/T 22319.9-2018 Measurement of quartz crystal unit parameters—Part 9:Measurement of spurious resonances of piezoelectric crystal units
Professional Standard - Agriculture, crystal peak
Aerospace Industries Association, crystal peak
AIA/NAS - Aerospace Industries Association of America Inc., crystal peak
Institute of Electrical and Electronics Engineers (IEEE), crystal peak
CEN - European Committee for Standardization, crystal peak
- EN IEC 60122-4:2019 Quartz crystal units of assessed quality - Part 4: Crystal units with thermistors
Professional Standard - Commodity Inspection, crystal peak
- SN/T 1175-2003 Methods for the inspection of thin film transistor color liquid crystal display devices for import and export
European Committee for Electrotechnical Standardization(CENELEC), crystal peak
- EN 60444-9:2007 Measurement of quartz crystal unit parameters - Part 9: Measurement of spurious resonances of piezoelectric crystal units
- HD 302-1975 Transistorized Ballast for Fluorescent Lamps
- EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
IN-BIS, crystal peak
Aerospace Industries Association/ANSI Aerospace Standards, crystal peak
BE-NBN, crystal peak
TH-TISI, crystal peak
Professional Standard - Aviation, crystal peak
- HB 6742-1993 Determination of Crystal Orientation of Single Crystal Blades by X-ray Backblow Laue Photography