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Elemental Analysis of Silicon Surface

Elemental Analysis of Silicon Surface, Total:105 items.

In the international standard classification, Elemental Analysis of Silicon Surface involves: Analytical chemistry, Construction materials, Ferrous metals, Road engineering, Insulating fluids, Testing of metals, Non-metalliferous minerals, Integrated circuits. Microelectronics, Languages used in information technology, Non-ferrous metals, Glass, Products of the chemical industry, Graphical symbols, Water quality.

Korean Agency for Technology and Standards (KATS), Elemental Analysis of Silicon Surface

KS D ISO 14706-2003(2018)
KS D ISO 17973-2011(2021) Surface chemical analysis－Medium-resolution Auger electron spectrometers－Calibration of energy scales for elemental analysis
KS D ISO 17973-2011(2016) Surface chemical analysis－Medium-resolution Auger electron spectrometers－Calibration of energy scales for elemental analysis
KS D ISO 17973:2011 Surface chemical analysis－Medium-resolution Auger electron spectrometers－Calibration of energy scales for elemental analysis
KS D ISO 17974-2011(2021) Surface chemical analysis－High-resolution Auger electron spectrometers－Calibration of energy scales for elemental and chemical-state analysis
KS D ISO 17974-2011(2016) Surface chemical analysis－High-resolution Auger electron spectrometers－Calibration of energy scales for elemental and chemical-state analysis
KS D ISO 17974:2011 Surface chemical analysis－High-resolution Auger electron spectrometers－Calibration of energy scales for elemental and chemical-state analysis
KS D ISO 17560-2003(2018)
KS D ISO 14706:2003 Surface chemical analysis－Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence(TXRF) spectroscopy
KS M ISO 8215:2007 Surface active agents－Washing powders－Determination of total silica content－Gravimetric method
KS D ISO 14237-2003(2018)
KS D ISO 17560:2003 Surface chemical analysis－Secondary-on mass spectrometry－ Method for depth profiling of boron in silicon

KR-KS, Elemental Analysis of Silicon Surface

国家市场监督管理总局、中国国家标准化管理委员会, Elemental Analysis of Silicon Surface

GB/T 40110-2021 Surface chemical analysis—Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
GB/T 39527-2020 Determination of calcium, aluminium and silicon in the solid surface materials—Method of chemical analysis
GB/T 29732-2021 Surface chemical analysis—Medium resolution auger electron spectrometers—Calibration of energy scales for elemental analysis
GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry
GB/T 40109-2021 Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of boron in silicon

British Standards Institution (BSI), Elemental Analysis of Silicon Surface

BS ISO 14706:2000 Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
BS ISO 14706:2014 Surface chemical analysis. Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
BS ISO 14706:2001 Surface chemical analysis. Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
BS ISO 17331:2004+A1:2010 Surface chemical analysis. Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy
BS ISO 17973:2003 Surface chemical analysis - Medium-resolution Auger electron spectrometers - Calibration of energy scales for elemental analysis
BS ISO 17973:2016 Tracked Changes. Surface chemical analysis. Medium-resolution Auger electron spectrometers. Calibration of energy scales for elemental analysis
BS ISO 12406:2010 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon
BS ISO 17974:2002 Surface chemical analysis - High-resolution Auger electron spectrometers - Calibration of energy scales for elemental and chemical-state analysis
BS ISO 19668:2017 Surface chemical analysis. X-ray photoelectron spectroscopy. Estimating and reporting detection limits for elements in homogeneous materials
BS ISO 17560:2002 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
BS ISO 17560:2014 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon
BS ISO 14701:2011 Surface chemical analysis. X-ray photoelectron spectroscopy. Measurement of silicon oxide thickness
BS 6200-4:1989 Sampling and analysis of iron, steel and other ferrous metals - Recommendations for the order of listing elements in the chemical analysis of steel
BS ISO 23812:2009 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth calibration for silicon using multiple delta-layer reference materials
BS ISO 14701:2018 Tracked Changes. Surface chemical analysis. X-ray photoelectron spectroscopy. Measurement of silicon oxide thickness

International Organization for Standardization (ISO), Elemental Analysis of Silicon Surface

ISO 17331:2004/Amd 1:2010 Surface chemical analysis - Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy; Amendment 1
ISO/TR 6306:1989 Chemical analysis of steel; order of listing elements
ISO/DIS 17973:2023 Surface chemical analysis — Medium-resolution Auger electron spectrometers — Calibration of energy scales for elemental analysis
ISO/CD 17973 Surface chemical analysis — Medium-resolution Auger electron spectrometers — Calibration of energy scales for elemental analysis
ISO 17331:2004 Surface chemical analysis - Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy
ISO 17973:2016 Surface chemical analysis - Medium-resolution Auger electron spectrometers - Calibration of energy scales for elemental analysis
ISO 17973:2002 Surface chemical analysis - Medium-resolution Auger electron spectrometers - Calibration of energy scales for elemental analysis
ISO 17560:2014 Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
ISO 12406:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
ISO 17974:2002 Surface chemical analysis - High-resolution Auger electron spectrometers - Calibration of energy scales for elemental and chemical-state analysis
ISO 19668:2017 Surface chemical analysis — X-ray photoelectron spectroscopy — Estimating and reporting detection limits for elements in homogeneous materials
ISO 14701:2018 Surface chemical analysis — X-ray photoelectron spectroscopy — Measurement of silicon oxide thickness
ISO 14706:2000 Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
ISO 14706:2014 Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
ISO 14701:2011 Surface chemical analysis - X-ray photoelectron spectroscopy - Measurement of silicon oxide thickness
ISO 17560:2002 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Elemental Analysis of Silicon Surface

GB/T 30701-2014 Surface chemical analysis.Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy
GB/T 29732-2013 Surface chemical analysis.Medium resolution Auger electron spectrometers.Calibration of energy scales for elemental analysis
GB/T 32055-2015 Microbeam analysis.Electron probe microanalysis.Methods for elemental-mapping analysis using wavelengthdispersive spectroscopy
GB/T 29731-2013 Surface chemical analysis.High-resolution Auger electron spectrometers.Calibration of energy scales for elemental and chemical-state analysis
GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
GB/T 14506.30-2010 Methods for chemical analysis of silicate rocks.Part 30:Determination of 44 elements
GB/T 32495-2016 Surface chemical analysis.Secondary-ion mass spectrometry.Method for depth profiling of arsenic in silicon
GB/T 14506.29-2010 Methods for chemical analysis of silicate rocks-Part 29: Determination of 22 elements including rare earth elements
GB/T 14506.28-1993 Silicate rocks. Determination of contents of major and minor elements. X-ray fluorescence spectrometric method
GB/T 14849.5-2010 Chemical analysis of slion metal.Part 5: Determination of elements content.Analysis using an X-ray fluorescence method
GB/T 14849.5-2014 Methods for chemical analysis of silicon metal.Part 5:Determination of impurity contents.X-ray fluorescence method
GB/T 14849.4-2008 Methods for chemical analysis of silicon metal.Part 4: Determination of elements content.Inductively coupled plasma atomic emission specrometric method

Association Francaise de Normalisation, Elemental Analysis of Silicon Surface

NF ISO 17973:2006 Analyse chimique des surfaces - Spectromètres d'électrons Auger à résolution moyenne - Étalonnage des échelles d'énergie pour l'analyse élémentaire
NF X21-054*NF ISO 17973:2006 Surface chemical analysis - Medium-resolution Auger electron spectrometers - Calibration of energy scales for elemental analysis.
NF ISO 17974:2009 Analyse chimique des surfaces - Spectromètres d'électrons Auger à haute résolution - Étalonnage des échelles d'énergie pour l'analyse élémentaire et de l'état chimique
NF X21-067*NF ISO 17974:2009 Surface chemical analysis - High-resolution Auger electron spectrometers - Calibration of energy scales for elemental and chemical-state analysis.
NF ISO 17560:2006 Analyse chimique des surfaces - Spectrométrie de masse des ions secondaires - Dosage du bore dans le silicium par profilage d'épaisseur
NF EN ISO 23157:2022 Détermination de la teneur en groupes silanol à la surface de la silice pyrogénée - Méthode par analyse chromatographique en phase gazeuse des gaz de réaction
NF ISO 14237:2010 Analyse chimique des surfaces - Spectrométrie de masse des ions secondaires - Dosage des atomes de bore dans le silicium à l'aide de matériaux dopés uniformément
NF EN 16424:2014 Caractérisation des déchets - Méthode de dépistage pour la détermination de la composition élémentaire au moyen d'analyseurs portables de fluorescence X
NF X21-066*NF ISO 23812:2009 Surface chemical analysis - Secondary ion mass spectrometry - Method for depth calibration for silicon using multiple delta-layer reference materials
NF X21-051*NF ISO 17560:2006 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon

RO-ASRO, Elemental Analysis of Silicon Surface

STAS 9163/16-1973 SILICA-ALUMINA MINING PRODUCTS Spectral analysis of elements Fe, Ti, Cu, Mg, Mn, Cu

Japanese Industrial Standards Committee (JISC), Elemental Analysis of Silicon Surface

JIS K 0165:2011 Surface chemical analysis -- Medium-resolution Auger electron spectrometers -- Calibration of energy scales for elemental analysis
JIS K 0160:2009 Surface chemical analysis -- Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy
JIS K 0164:2023 Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth profiling of boron in silicon
JIS K 0166:2011 Surface chemical analysis -- High-resolution Auger electron spectrometers -- Calibration of energy scales for elemental and chemical-state analysis
JIS K 0148:2005 Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
JIS K 0164:2010 Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth profiling of boron in silicon

American Society for Testing and Materials (ASTM), Elemental Analysis of Silicon Surface

ASTM E3008/E3008M-16(2023) Standard Classification for Transportation Surface Elements—UNIFORMAT II
ASTM D5738-95(2006) Standard Guide for Displaying the Results of Chemical Analyses of Groundwater for Major Ions and Trace ElementsDiagrams for Single Analyses
ASTM D5738-95(2000) Standard Guide for Displaying the Results of Chemical Analyses of Ground Water for Major Ions and Trace Elements-Diagrams for Single Analyses
ASTM D5877-95(2000) Standard Guide for Displaying Results of Chemical Analyses of Ground Water for Major Ions and Trace Elements-Diagrams Based on Data Analytical Calculations

未注明发布机构, Elemental Analysis of Silicon Surface

BS ISO 17974:2002(2010) Surface chemical analysis — High - resolution Auger electron spectrometers — Calibration of energy scales for elemental and chemical - state analysis

PL-PKN, Elemental Analysis of Silicon Surface

PN H04208-03-1989 Analiza chemiczna ?elazostopów ?elazomolibden Oznaczanie zawarto?ci krzemu

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Elemental Analysis of Silicon Surface

GB/T 33236-2016 Polycrystalline silicon—Determination of trace elements—Glow discharge mass spectrometry method

Standard Association of Australia （SAA）, Elemental Analysis of Silicon Surface

AS ISO 17974:2006 Surface chemical analysis - High-resolution Auger electron spectrometers - Calibration of energy scales for elemental and chemical-state analysis
AS ISO 17560:2006 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon

German Institute for Standardization, Elemental Analysis of Silicon Surface

DIN 51456:2013-10 Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS)
DIN 51456:2013 Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS)

Group Standards of the People's Republic of China, Elemental Analysis of Silicon Surface

T/CASAS 032-2023 Test method for the content of metal elements on the surface of silicon carbide wafer—Inductively coupled plasma mass spectrometry
T/CSTM 00012E-2021 Iron and steel--Characterization of distribution of multi-element contents and status--Original position statistic distribution analysis method of laser induced breakdown spectroscopy
T/CSTM 00012-2017 Laser-induced breakdown spectroscopy in-situ statistical distribution analysis method for multi-element composition and state distribution characterization of iron and steel

International Electrotechnical Commission (IEC), Elemental Analysis of Silicon Surface

IEC 61636-99:2016*IEEE Std 1636.99 Software Interface for Maintenance Information Collection and Analysis (SIMICA): Common Information Elements
IEC 61636-99:2016 Software Interface for Maintenance Information Collection and Analysis (SIMICA): Common Information Elements
IEC 61636:2021*IEEE Std 1636 Software Interface for Maintenance Information Collection and Analysis (SIMICA): Common Information Elements

CZ-CSN, Elemental Analysis of Silicon Surface

CSN 72 0114 Cast.2 Z1-1997
CSN 70 0527 Cast.1-1986 Glass testing methods. Silicate glass. Method for the quantitative analysis of the extracts surface of glass products. The determination of silica oxide
CSN 72 0113 Cast.2 Z1-1997
CSN 70 0527 Cast.2-1986 Glass testing methods. Silicate glass. Method for the quantitative analysis of the extracts from the surface of glass products. Determination of boric oxide
CSN 70 0527 Cast.5-1986 Glass testing methods. Silicate glass. Method for the quantitative analysis of the extracts from the surface of glass products. Determination of lead oxide
CSN 70 0527 Cast.4-1986 Glass testing methods. Silicate glass. Method for the quantitative analysis of the extracts from the surface of glass products. Determination of iron oxide
CSN 70 0527 Cast.7-1986 Glass testing methods. Silicate glass. Method for the quantitative analysis of the extracts from the surface of glass products. Determination of arsenious oxide

American Gear Manufacturers Association, Elemental Analysis of Silicon Surface

AGMA 91FTM16-1991 Contact Analysis of Gears Using a Combined Finite Element and Surface Integral Method