H81 半金属 标准查询与下载

ASTM F374-00a 用单型程序直列式四点探针法测定硅外延层、扩散层、多晶硅层和离子注入层的薄膜电阻的测试方法

1.1 This test method covers the direct measurement of the average sheet resistance of thin layers of silicon with diameters greater than 15.9 mm (0.625 in.) which are formed by epitaxy, diffusion, or implantation onto or below the surface of a circular silicon wafer having the opposite conductivity type from the thin layer to be measured or by the deposition of polysilicon over an insulating layer. Measurements are made at the center of the wafer using a single-configuration of the four-probe, that is, with the current being passed through the outer pins and the resulting potential difference being measured with the inner pins.1.2 This test method is known to be applicable on films having thickness at least 0.2 181m. It can be used to measure sheet resistance in the range 10 to 5000 [omega], inclusive.1.2.1 The principle of the test method can be extended to cover lower or higher values of sheet resistance; however, the precision of the method has not been evaluated for sheet resistance ranges other than those given in 1.2. Note 1--The minimum value of the diameter is related to tolerances on the accuracy of the measurement through the geometric correction factor. The minimum layer thickness is related to danger of penetration of the probe tips through the layer during measurement.1.3 Procedures for preparing the specimen, for measuring its size, and for determining the temperature of the specimen during the measurement are also given. Abbreviated tables of correction factors appropriate to circular geometry are included with the method so that appropriate calculations can be made conveniently. Note 2--The principles of this test method are also applicable to other semiconductor materials, but neither the appropriate conditions nor the expected precision have been determined. Other geometries can also be measured, but only comparative measurements using similar geometrical conditions should be used unless proper geometrical correction factors are known.Note 3--Some relaxations of test conditions are mentioned in order to assist in applying the principles of the method to nonreferee applications, for which a complete nonreferee method has not yet been developed. The relaxed test conditions given are consensus conditions only and their effect on measurement precision and accuracy has not been explored.1.4 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.Specific hazard statements are given in Section 9.

Standard Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure

YS/T 99-1997 三氧化二砷

Arsenic trioxide

SN/T 0550.1-1996 出口金属硅中铁、铝、钙的测定.分光光度法

Determination of iron,aluminium and calcium for export sillicon metal.Photometric method

SN/T 0550.2-1996 出口金属硅中铁、铝、钙的测定.容量法

Determination of iron,aluminium and calcium for export sillicon metal.Volumetric method

JIS H 0615:1996 用光致发光光谱法测定硅晶体中杂质浓度的试验方法

この規格は,フォトルミネッセンスによるシリコン単結品及び多結品シリコンの不純物濃度の定方法について規定する。測定可能な不純物元素は，ボロン(B)，アルミニウム(Al) ,りん(P)及びひ素(As)で測定濃度範囲は1×1011～5×015atoms/cm3 (0.002～100 ppba)である。

Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy

JIS H 0614:1996 镜面硅片的目视检查

この規格は,半導体素子を形成することを目的としたシリコンウェーハをケミカル·メカニカルポリッシュによって鏡面加工仕上げしたウェーハ（以下，ウェーハという。）の表面(鏡面及び裏面)の目視による外観検査について規定する。

Visual inspection for silicon wafers with specular surfaces

ASTM D5604-96(2006) 沉淀二氧化硅的标准试验方法.用单点B.E.T.氮的吸附法沉淀的硅表面积

These test methods measure the approximate surface area of precipitated hydrated silicas that is available to the nitrogen molecule using an approximation of the B.E.T. method. While the multi-point version of the B.E.T. method is generally accepted as being less prone to errors arising from the varying surface properties of individual samples, the single-point approximation is often adequate due to the shorter time per test and relative simplicity of the instrumentation needed. Quality control applications and comparative tests on near-identical samples of close chemical and micro-structural composition are likely to be the applications of greatest value.1.1 These test methods cover a procedure to measure the surface area of precipitated hydrated silicas by, a single point approximation of the Brunauer, Emmett, and Teller (B.E.T.) theory of multilayer gas adsorption. These test methods specify the sample preparation and treatment, instrument calibrations, required accuracy and precision of experimental data, and calculations of the surface area results from the obtained data.1.2 These test methods are used to determine the single point nitrogen surface areas in the range of 10 to 50 hm2 kg (10 to 500 m2/g).1.3 The values stated in SI units are to be regarded as the standard. The values in parentheses are for information only.This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. The minimum safety equipment should include protective gloves, sturdy eye and face protection.

Standard Test Methods for Precipitated Silica-Surface Area by Single Point B.E.T. Nitrogen Adsorption

ASTM D5604-96(2001) 沉淀二氧化硅的标准试验方法.用单点B.E.T.氮的吸附法沉淀的硅表面积

1.1 These test methods cover a procedure to measure the surface area of precipitated hydrated silicas by, a single point approximation of the Brunauer, Emmett, and Teller (B.E.T.) theory of multilayer gas adsorption. These test methods specify the sample preparation and treatment, instrument calibrations, required accuracy and precision of experimental data, and calculations of the surface area results from the obtained data.1.2 These test methods are used to determine the single point nitrogen surface areas in the range of 10 to 50 hm2 kg (10 to 500 m2/g).1.3 The values stated in SI units are to be regarded as the standard. The values in parentheses are for information only.1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. The minimum safety equipment should include protective gloves, sturdy eye and face protection.

Standard Test Methods for Precipitated Silica8212;Surface Area by Single Point B.E.T. Nitrogen Adsorption

ASTM D5604-96 沉淀二氧化硅的标准试验方法.用单点B.E.T.氮的吸附法沉淀的硅表面积

1.1 These test methods cover a procedure to measure the surface area of precipitated hydrated silicas by, a single point approximation of the Brunauer, Emmett, and Teller (B.E.T.) theory of multilayer gas adsorption. These test methods specify the sample preparation and treatment, instrument calibrations, required accuracy and precision of experimental data, and calculations of the surface area results from the obtained data.1.2 These test methods are used to determine the single point nitrogen surface areas in the range of 10 to 50 hm2 kg (10 to 500 m2/g).1.3 The values stated in SI units are to be regarded as the standard. The values in parentheses are for information only.1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. The minimum safety equipment should include protective gloves, sturdy eye and face protection.

Standard Test Methods for Precipitated Silica8212;Surface Area by Single Point B.E.T. Nitrogen Adsorption

ASTM D5604-96(2012) 沉淀二氧化硅的标准试验方法.通过单点B.E.T.氮吸附法测定的表面积

These test methods measure the approximate surface area of precipitated hydrated silicas that is available to the nitrogen molecule using an approximation of the B.E.T. method. While the multi-point version of the B.E.T. method is generally accepted as being less prone to errors arising from the varying surface properties of individual samples, the single-point approximation is often adequate due to the shorter time per test and relative simplicity of the instrumentation needed. Quality control applications and comparative tests on near-identical samples of close chemical and micro-structural composition are likely to be the applications of greatest value.1.1 These test methods cover a procedure to measure the surface area of precipitated hydrated silicas by, a single point approximation of the Brunauer, Emmett, and Teller (B.E.T.) theory of multilayer gas adsorption. These test methods specify the sample preparation and treatment, instrument calibrations, required accuracy and precision of experimental data, and calculations of the surface area results from the obtained data. 1.2 These test methods are used to determine the single point nitrogen surface areas in the range of 10 to 50 hm2 kg (10 to 500 m2/g). 1.3 The values stated in SI units are to be regarded as the standard. The values in parentheses are for information only. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. The minimum safety equipment should include protective gloves, sturdy eye and face protection.

Standard Test Methods for Precipitated Silicamdash;Surface Area by Single Point B.E.T. Nitrogen Adsorption

ASTM F533-96 硅片的厚度及厚度变化的标准试验方法

1.1 This test method covers measurement of the thickness of silicon wafers, polished or unpolished, and estimation of the variation in thickness across the wafer. 1.2 This test method is intended primarily for use with wafers that meet the dimension and tolerance requirements of SEMI Specifications M1. However, it can be applied to circular silicon wafers, or substrates of any diameter and thickness that can be handled without breaking. 1.3 This test method is suitable for both contact and contactless gaging equipment. Precision statements have been established for each. 1.4 The values stated in inch-pound units are to be regarded as standard. The values in parentheses are for information only. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Thickness and Thickness Variation of Silicon Wafers

JIS H 0604:1995 用光电导衰减法测量硅单晶中少数载流子的寿命

この規格は，シリコン単結晶中の少数キャリアのパルク再粘合ライフタイム（以下，パルクライフタイム又はτBという。）を直流回路を用いた光導電減衰法によって測定する方法について規定する。なお，測定する単結晶は均一な組成をもち，抵抗率がlΩ·cm以上のものとする。

Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method

JIS H 0611:1994 硅片厚度、厚度变化及弯曲的测量方法

この規格は，シリコン単結晶ウェーハ(以下，ウェーハという。)の厚さ，厚さむら及びポウの測定方法について規定する。

Methods of measurement of thickness, thickness variation and bow for silicon wafer

YS/T 28-1992 硅片包装

Wafer packaging

JIS G 2312:1986 金属硅

この規格は，主として非鉄合金及び鉄鋼の製造に用いる合金成分添加剤である金属けい素について規定する。

Silicon metal

ASTM F358-83(2002) 磷化砷化镓片的最大光致发光波长及其相应成分的试验方法

1.1 This test method covers the techniques used to determine the wavelength of the photoluminescence peak and the mole percent phosphorus content of gallium arsenide phosphide, GaAs(1 x)Px.1.2 Photoluminescence measurements indicate the composition only in the illuminated region and only within a very short distance from the surface, a distance limited by the penetration of the radiation and the diffusion length of the photo-generated carriers, as contrasted to X-ray measurements which sample a much deeper volume.1.3 This test method is limited by the surface preparation procedure to application to epitaxial layers of the semiconductor grown in a vapor-phase reactor on a flat substrate. It is directly applicable to n-type GaAs(1x)Px with the wavelength, PL, of the photoluminescence peak in the range from 640 to 670 nm, corresponding to mole percent phosphorus in the range from 36 to 42 % ( x = 0.36 to 0.42). The calibration data provided for the determination of x from P L is applicable to material doped with tellurium or selenium at concentrations in the range from 1016 to 1018 atoms/cm3.1.4 The principle of this test method is more broadly applicable. Other material preparation methods may require different surface treatments. Extension to other dopants, doping ranges or composition ranges requires further work to relate PL to the phosphorus content as determined by X-ray measurements of the precise dimensions of the unit cell upon which the calibration data are based. It is essential that calibration specimens have uniform composition in the volume sampled.1.5 This test method is essentially nondestructive. It requires a light etching of the sample to be measured. The removal of a layer of material approximately 0.5 to 1.0 m in thickness is required. This etching does not degrade the specimen in that devices can still be fabricated from it.1.6 This test method is applicable to process control in the preparation of materials and to materials acceptance.1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 7.

Standard Test Method for Wavelength of Peak Photoluminescence and the Corresponding Composition of Gallium Arsenide Phosphide Wafers

ASTM F358-83(1996)e1 磷化砷化镓片的最大光致发光波长及其相应成分的试验方法

1.1 This test method covers the techniques used to determine the wavelength of the photoluminescence peak and the mole percent phosphorus content of gallium arsenide phosphide, GaAs(1 x)Px.1.2 Photoluminescence measurements indicate the composition only in the illuminated region and only within a very short distance from the surface, a distance limited by the penetration of the radiation and the diffusion length of the photo-generated carriers, as contrasted to X-ray measurements which sample a much deeper volume.1.3 This test method is limited by the surface preparation procedure to application to epitaxial layers of the semiconductor grown in a vapor-phase reactor on a flat substrate. It is directly applicable to n-type GaAs(1x)Px with the wavelength, PL, of the photoluminescence peak in the range from 640 to 670 nm, corresponding to mole percent phosphorus in the range from 36 to 42 % ( x = 0.36 to 0.42). The calibration data provided for the determination of x from P L is applicable to material doped with tellurium or selenium at concentrations in the range from 1016 to 1018 atoms/cm3.1.4 The principle of this test method is more broadly applicable. Other material preparation methods may require different surface treatments. Extension to other dopants, doping ranges or composition ranges requires further work to relate PL to the phosphorus content as determined by X-ray measurements of the precise dimensions of the unit cell upon which the calibration data are based. It is essential that calibration specimens have uniform composition in the volume sampled.1.5 This test method is essentially nondestructive. It requires a light etching of the sample to be measured. The removal of a layer of material approximately 0.5 to 1.0 m in thickness is required. This etching does not degrade the specimen in that devices can still be fabricated from it.1.6 This test method is applicable to process control in the preparation of materials and to materials acceptance.1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 7.

Standard Test Method for Wavelength of Peak Photoluminescence and the Corresponding Composition of Gallium Arsenide Phosphide Wafers

JIS H 0607:1978 用热电动势法测定锗导电类型

この規格は，ゲルマニウム結晶の伝導型を熱起電カ法により判定する方法について規定したもので，縮退をしていないゲルマ=ウムの単結晶で抵抗率が40Ω·cm以下のほぼ均質な試料に週用する。

Determination of conductivity type in germanium by thermoelectromotive method

JIS H 0613:1978 切制硅片及磨光硅片的目视检查

この規格は，シリコンのスライス又はラッしたウエーハ（以下，ウエーハという。）の外観検査について規定する。

Visual inspection for sliced and lapped silicon wafers

ASTM F418-77(2002) 测量霍尔效应用恒定成分范围的外延磷化砷化镓试样的制备

The efficiency of light-emitting diodes is known to vary with the carrier density of the starting material. This procedure provides a technique to prepare specimens in which the Hall carrier density can be measured in a region typical of that in which devices are fabricated. This quantity, which is related to the carrier density, can be used directly as a quality control parameter. Mobility is a function of a number of parameters of a semiconductor, including ionized impurity density, compensation, and lattice defects, some or all of which may be relatable to material quality as reflected in device quality. Use of this procedure makes the measurement of the mobility of the constant composition region possible. Since in GaAs (1−x)Px with x near 0.38, as is most often used for light-emitting diodes, the direct (000 or Γ) minimum and the indirect (100 or X) minima are within a few millielectronvolts in energy of each other, both are populated with current-carrying electrons. The mobility in the two bands is significantly different, and the relative population of the two is dependent upon the precise composition (x value), doping level, and temperature. Therefore, both Hall coefficient and Hall mobility must be interpreted with care (2,3). In particular, a measurement of Hall carrier density will not agree with a carrier density measurement on the same specimen made by capacitance-voltage techniques. Nevertheless, if the intent of measuring the carrier density of purchased or grown specimens is to find those which are optimum for diode fabrication, Hall measurements can be of value because a curve of efficiency versus Hall carrier density can be derived for the device process to be used based upon data taken on specimens prepared in accordance with this procedure.1.1 This practice covers a procedure to be followed to free the constant composition region of epitaxially grown gallium arsenide phosphide, GaAs(1x)Px, from the substrate and graded region on which it was grown in order to measure the electrical properties of only the constant composition region, which is typically 30 to 100 m thick. It also sets forth two alternative procedures to be followed to make electrical contact to the specimen.1.2 It is intended that this practice be used in conjunction with Test Methods F 76.1.3 The specific parameters set forth in this recommended practice are appropriate for GaAs0. 62P0. 38, but they can be applied, with changes in etch times, to material with other compositions.1.4 This practice does not deal with making or interpreting the Hall measurement on a specimen prepared as described herein, other than to point out the existence and possible effects due to the distribution of the free carriers among the two conduction band minima.1.5 This practice can also be followed in the preparation of specimens of the constant composition region for light absorption measurements or for mass or emission spectrometric analysis.1.6 This practice becomes increasingly difficult to apply as specimens become thinner.1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. For hazard statement, see Section 9 and 11.9.2.4.

Standard Practice for Preparation of Samples of the Constant Composition Region of Epitaxial Gallium Arsenide Phosphide for Hall Effect Measurements