共找到 223 条与 半导体二极管 相关的标准,共 15 页
Method of Diode 換?Measurement Reaffirmation of ANSI/EIA-381-1-1992
Method of Diode 換?Measurement Reaffirmation of ANSI/EIA-381-1-1992
Transistor Noise Figure and Effective Input Noise Temperature at MF, HF and VHF, Measurement of
Transistor Noise Figure and Effective Input Noise Temperature at MF, HF and VHF, Measurement of [Replaced: JEDEC EIA-283]
Supplement 1 to NF C96-621-77
Structure and technology of test diode
Detail specification for germanium wideband detector diodes,Type 2AP30~2AP31
Methods of measurement for high frequency rectified current of germanium detector diodes
Detail specification for germanium detector diodes,Type 2AP9~2AP10
Detail specification for germanium detector diodes,Type 2AP1~2AP8,2AP21 and 2AP27
Detail specification for germanium detector diodes,Type 2AP11~2AP17
Detail specification for germanium switching diodes,Type 2AK1~20
Methods of measurement for reverse breakdown voltage of silicon switching diodes
This part consists of a l i s t i n g o f l e t t e r symbols, terms, and definitions which are used in other parts o f t h i s document, and some which are included for general information. symbols of limited application whose use and definition are sufficient-ly close in the document t o avoid the necessity of being included.
Low Frequency Power Transistors
Detail specification for silicon voltage regulator diodes,Type 3DW50~202
Detail specification for silicon planar temperature compensation voltage regulator diodes,Type 2DW230~236
Detail specification for silicon voltage regulator diodes,Type 2CW50~149
JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel.
Conduction Cooled Power Transistors, Thermal Resistance Measurements of Revision of EIA-313-B formerly RS-313-B
Ratings, characteristics and test requirements. Semiconductor devices of assessed quality.
Detail specification for silicon voltage regulator diodes - 1.0 W, 3.3 to 33 V (5%), hermetically sealed - Full assessment level
Ratings, characteristics and test requirements. Semiconductor devices of assessed quality. They may be regarded as direct replacements for types CV8417, CV8427 and CV7843 to CV7849.
Detail specification for silicon voltage regulator diodes - 1.5 W, 6.8 to 200 V (5%), hermetically sealed - General application category C
Specifies the ratings, characteristics and test requirements for diodes in voltage range 2.7 V to 33 V and 400 mW maximum reverse power dissipation. These diodes are regarded by the original approval authority as direct replacements for the CV7009-CV7106 and CV7138-CV7146.
Detail specification for silicon voltage regulator diodes - 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation - General application category Q
Ratings, characteristics and test requirements. Semiconductor devices of assessed quality. They may be regarded as replacements for types CV7405 to CV7429.
Detail specification for silicon voltage regulator diodes - 1.5 W, 3.3 to 33 V (5%), hermetically sealed - General application category Q
Copyright ©2007-2022 ANTPEDIA, All Rights Reserved
京ICP备07018254号 京公网安备1101085018 电信与信息服务业务经营许可证:京ICP证110310号