L41 半导体二极管 标准查询与下载

NF C86-612/A2:1987 NF C 86-612-1981补充件2

NF C 86-612-1981 Supplement 2

SJ 2747-1987 阶跃恢复二极管空白详细规范

本空白详细规范规定了制订阶跃恢复二极管详细规范的基本原则，制订该范围内的所有详细规范应与本空白详细规范一致。 本空白详细规范是与GB4936.1-85《半导体分立器件总规范》有关的一系列空白详细规范中的一个。

Blank detail specification for step-function recovery diodes

JEDEC JESD531-1986 单个和调节二极管的热阻测量方法(正向电压,交换方法).确定ANSI/EIA-531-1986, IS-13已发布; 代替JEDEC JEP90

JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel.

Thermal Resistance Test Method for Signal and Regulator Diodes (Forward Voltage, Switching Method) Reaffirmation of ANSI/EIA-531-1986, Previously Published as IS-13; Replaces JEDEC JEP 90

NF C96-003:1986 半导体器件.分立器件和集成电路.第3部分:信号(包括开关)和整流二极管

Semiconductor devices. Discrete devices and integrated circuits. Part 3 : signal (including switching) and regulator diodes.

BS 6493 Sec.1.3:1986 半导体器件.第1部分:分立器件.第3节:信号(包括开关)和调节二极管推荐规范

Semiconductor devices. Discrete devices. Recommendations for signal (including switching) and regulator diodes

BS 6493-1.3:1986 半导体器件.分立器件.信号(包括开关)和调节器二极管推荐标准

General details, terminology and letter symbols, essential ratings and characteristics and measuring methods.

Semiconductor devices - Discrete devices - Recommendations for signal (including switching) and regulator diodes

IEC 60747-3-1:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第1节:信号二极管、开关二极管和可控雪崩二极管空白详细规范

Applicable to quality assessment for signal diodes, switching diodes and controlled avalanche diodes. Gives specific requirements (included in QC 750001 of the IECQ system), represents the blank detail specification.

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes

IEC 60747-3-2:1986 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 第2节:电压调整二极管和电压基准二极管(不包括温度补偿精密基准二极管)空白详细规范

Applicable to quality assessment for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes. Gives specific requirements (included in QC 750005 of the IECQ system), represents the blank detail

Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d

JEDEC JESD482-A-1984 在各种类型小型信号和调整起二极管中使用的首选值清单

In t h e manufacture and a p p l i c a t i o n of diodes it is desirable t o s t a n d a r d i z e the nominal v a l u e s when s p e c i f y i n g breakdown v o l t a g e for v o l t a g e r e g u l a t o r d i o d e s , c a p a c i t a n c e f o r v a r i a b l e c a p a c i t o r d i o d e s , and peak p o i n t c u r r e n t for t u n n e l d i o d e s .

List of Preferred Values for Use on Various Types of Small Signal and Regulator Diodes

NF C86-819/A2:1984 电子元件管壳额定整流二极管在法国标准NF C 86-010和NF C 86-819 (CECC 50 000.CECC 50 009)范围内的详细规范手册

Electronic Components Case-rated rectifier diodes Manual of detail specifications within the scope of the French standards NF C 86-010 and NF C 86-819 (CECC 50 000 - CECC 50 009)

Electronic Components Case-rated rectifier diodes Manual of detail specifications within the scope of the French standards NF C 86-010 and NF C 86-819 (CECC 50 000 - CECC 50 009)

NF C86-815/A3:1983 电子元件稳压二极管和电压参考二极管法国标准NF C 86-010和NF C 86-815 (CECC 50 000和CECC 50 000)详细规范手册

Electronic Components Voltage regulator diodes and voltage reference diodes Manual of detail specifications within the scope of the French standards NF C 86-010 and NF C 86-815 (CECC 50 000 and CECC 50 000)

Electronic Components Voltage regulator diodes and voltage reference diodes Manual of detail specifications within the scope of the French standards NF C 86-010 and NF C 86-815 (CECC 50 000 and CECC 50 000)

DLA MIL-L-376 C-1983 铅二极管

This specification covers technical grade lead dioxide.

LEAD DIOXIDE, TECHNICAL

JEDEC JESD4-1983 晶体闸流管和整流二极管的分离半导体封装的外部清洁度和漏电距离的定义

This Standard defines reference distances for the external package. It specifically exchdes transistors, nonhermetic devices (leak rate > 1 x IO4 standard cubic centimeter/second) and assemblies of semiconductor devices such as thyristors and rectifier diodes.

Definition of External Clearance and Creepage Distances of Discrete Semiconductor Packages for Thyristors and Rectifier Diodes

SJ 2138-1982 硅稳流二极管稳定电流的测试方法

Methods of measurement for regulated current of silicon current regulator diodes

SJ 2137-1982 硅稳流二极管测试方法.总则

General procedures of measurement for silicon current-regulator diodes

SJ 2141-1982 硅稳流二极管击穿电压的测试方法

Methods of measurement for breakdown voltage of silicon currenet regulator diodes

SJ 2142-1982 硅稳流二极管电流温度系数的测试方法

Methods of measurement for current temperature coefficient of silicon current regulator diodes

SJ 2140-1982 硅稳流二极管极限电压的测试方法

Methods of measurement for limiting voltage of silicon current regulator diodes

SJ 2139-1982 硅稳流二极管动态阻抗的测试方法

Methods of measurement for dynamic impedance of silicon current regulator diodes

JEDEC JESD5-1982 电压常规两极真空管温度系数测试

Temperature coefficient and voltage variation with temperature are parameters describing the voltage-temperature characteristics oí' regulator and reference diodes as referenced below

Mesurement of Temperature Coefficient of Voltage Regulator Diodes