共找到 100 条与 半导体光敏器件 相关的标准,共 7 页
Discrete semiconductor devices and integrated circuits - Part 5-1: Optoelectronic devices; General; Amendment 1
The purpose of this test is to assess the susceptibility of a module to accidental impact damage.
Susceptibility of a photovoltaic (PV) module to accidental impact damage (resistance to impact test)
本标准规定了在独立和并网光伏系统中功率调节器效率的测量方法, 其中功率调节器的输出是一定频率的稳定交流电压或者是稳定的直流电压。这个效率是在制造厂通过只见诶测量输入输出功率的大小而计算出来的。 本标准也适用于包裹隔离变压器的情况。
Photovoltaic systems - Power conditioners - Procedure for measuring efficiency
1.1 This test method covers a procedure to determine the insulation resistance of a photovoltaic (PV) array (or its component strings), that is, the electrical resistance between the array''s internal electrical components and is exposed, electrically conductive, non-current carrying parts and surfaces of the array. 1.2 This test method does not establish pass or fail levels. The determination of acceptable or unacceptable results is beyond the scope of this test method. 1.3 There is no similar or equivalent ISO standard. 1.4 Units-The values stated in either SI units or inch-pound units are to be regarded separately as standard. The values stated in each system may not be exact equivalents; therefore, each system shall be used independently of the other. Combining values from the two systems may result in non-conformance with the standard. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and to determine the applicability of regulatory limitations prior to use.
Standard Test Method for Wet Insulation Integrity Testing of Photovoltaic Arrays
Defines a test to determine the ability of photovoltaic modules to withstand exposure to UV radiation from 280 nm to 400 nm.
UV test for photovoltaic (PV) modules
Blank detail specification of PIN-FET modules with/without pigtail for fibre optic systems or subsystems
この規格は,光伝送用フォトダィオード〔電子回路内蔵形を除く。以下,フォトダイオードという。)の用語,記号,分類.最大定格,性能などの一般的共通事項について規定する。
General rules of photodiodes for fiber optic transmission
Photovoltaic devices. Part 5 : determination of the equivalent cell temperature (ect) of photovoltaic (pv) devices by the open-circuit voltage method.
Characteristic parameters of stand-alone photovoltaic (PV) systems.
Crystalline silicon terrestrial photovoltaic (pv) modules. Design qualification and type approval.
Photovoltaic (pv) systems. Characteristics of the utility interface.
Detail specification for type G2-01B-M1,G2-01B-Z1 metal case for semiconductor photosensitive devices
Detail specification for type GT11 semiconductor sililcon NPN photo-transistor
Blank detail specification: PIN-photodiodes for fibre optic applications
Blank detail specification: phototransistors, photodarlington transistors, phototransistor arrays
Blank detail specification: ambient rated photocouplers with phototransistor output
Blank detail specification: photodiodes, photodiode-arrays (not intended for fibre optic applications)
Amends a definition and adds two new notes in clause 2 (Correction procedures).
Procedures for temperature and irradiance corrections to measured I-V characteristics of crystalline silicon photovoltaic devices; amendment 1
Semiconductor devices; discrete devices and integrated circuits; part 5: optoelectronic devices
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