This book comprehensively covers the areas of materials growth@ characterisation and descriptions for the new devices in silicon heterostructure material systems. In recent years@ the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE)@ ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors@ but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists. Author(s) S. K. Ray@ C. K. Maiti@ N. B. Chakrabarti