This book on the process technology for silicon carbide devices is divided into seven chapters. The first chapter discusses the material properties of SiC@ and specifically the advantages of SiC that started the interest in the first place. This chapter also includes some basic calculations on high-voltage blocking and on-resistance. Chapters 2-6 cover the basic process steps used in fabricating SiC devices. The chapters cover bulk and epitaxial growth of SiC@ ion implantation and diffusion@ wet and dry etching@ thermally grown and deposited dielectrics and Schottky and ohmic contacts. The final chapter@ Chapter 7@ covers devices in SiC@ divided into different categories high-voltage devices@ high-frequency devices@ high-temperature@ optical and mechanical devices. Author Carl-Mikael Zetterling